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0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

IEEE transactions on electron devices, 2016-08, Vol.63 (8)

2016

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0.1- \mu \text Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers

IEEE electron device letters, 2015-05, Vol.36 (5), p.442-444

2015

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0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

IEEE transactions on electron devices, 2016-08, Vol.63 (8), p.3076-3083

2016

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A 0.13μm CMOS SoC for all-format blue and red laser DVD front-end digital signal processor

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006, p.1012-1021

2006

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0.15 μm gate length MHEMT technology for 77GHz automotive radar applications

2004

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A 0.18-μm CMOS front-end processor for a Blu-Ray Disc recorder with an adaptive PRML

IEEE journal of solid-state circuits, 2005, Vol.40 (1), p.342-350

2005

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0.2-[Formula Omitted] AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition [Formula Omitted] Passivation

IEEE electron device letters, 2013-06, Vol.34 (6), p.744

2013

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0.2- mu m AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al 2 O 3 Passivation

IEEE electron device letters, 2013-06, Vol.34 (6), p.744-746

2013

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0.2- \mu AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation

IEEE electron device letters, 2013-06, Vol.34 (6), p.744-746

2013

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0.2-μm AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al2O3 Passivation

IEEE electron device letters, 2013-06, Vol.34 (6), p.744-746

2013

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A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

IEEE journal of solid-state circuits, 2002-11, Vol.37 (11), p.1472-1478

2002

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A 0.25 μm complementary metal oxide semiconductor field effect transistor (CMOSFET) using halo implantation for 1 Gbit dynamic random access memory (DRAM)

Japanese journal of applied physics, 1996-02, Vol.35 (2B), p.865-868

1996

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0-3 piezoelectric composite film with high d33 coefficient

Sensors and actuators. A. Physical., 1998-03, Vol.65 (2-3), p.194-196

1998

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A 0.45V 423nW 3.2MHz multiplying DLL with leakage-based oscillator for ultra-low-power sensor platforms

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 2013, p.188-189

2013

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A 0.5 teraflops machine optimized for lattice QCD

Nuclear physics. Section B, Proceedings supplement, 1994-04, Vol.34, p.820-822

1994

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A 0.6-V 82-dB delta-sigma audio ADC using switched-RC integrators

IEEE journal of solid-state circuits, 2005-12, Vol.40 (12), p.2398-2407

2005

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0.8 μm CMOS analog front-end processor for 4x speed CD-ROM

1996. Digest of Technical Papers., International Conference on Consumer Electronics, 1996, p.420

1996

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0.8 mu m CMOS analog front-end processor for 4X speed CD-ROM

IEEE transactions on consumer electronics, 1996-08, Vol.42 (3), p.826-831

1996

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A 0.9-V 12-mW 5-MSPS algorithmic ADC with 77-dB SFDR

IEEE journal of solid-state circuits, 2005-04, Vol.40 (4), p.960-969

2005

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0.9V 12mW 2MSPS algorithmic ADC with 81dB SFDR

2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525), 2004, p.436-439

2004

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009. KALLIKREIN-RELATED PROTEASES AS NOVEL THERAPEUTIC TARGETS IN PROSTATE AND OVARIAN CANCER

Reproduction fertility and development, 2009, Vol.21 (9), p.6

2009

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072 - Manganese Dioxide Nanozymes as an ROS Scavenging Therapy for Osteoarthritis

Osteoarthritis and cartilage, 2024-04, Vol.32, p.S53-S54

2024

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074 There are two isoforms of BP180 in the mouse brain

Journal of investigative dermatology, 2020-07, Vol.140 (7), p.S8-S8

2020

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0792 Mandibular Movement Monitoring with Artificial Intelligence Analysis for the Diagnosis of Sleep Bruxism

Sleep (New York, N.Y.), 2020-05, Vol.43 (Supplement_1), p.A301-A302

2020

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O 08 - Unique T-cell subpopulation changes following combination SBPT and Nivolumab in platinum refractory HNSCC: Biomarker correlates from ROR1771

International journal of particle therapy, 2024-03, Vol.11

2024

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0.1-[Formula Omitted] InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

0.1- \mu \text Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers

0.1- \mu \text InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess

A 0.13μm CMOS SoC for all-format blue and red laser DVD front-end digital signal processor

0.15 μm gate length MHEMT technology for 77GHz automotive radar applications

A 0.18-μm CMOS front-end processor for a Blu-Ray Disc recorder with an adaptive PRML

0.2-[Formula Omitted] AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition [Formula Omitted] Passivation

0.2- mu m AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al 2 O 3 Passivation

0.2- \mu AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation

0.2-μm AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al2O3 Passivation

A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme

A 0.25 μm complementary metal oxide semiconductor field effect transistor (CMOSFET) using halo implantation for 1 Gbit dynamic random access memory (DRAM)

0-3 piezoelectric composite film with high d33 coefficient

A 0.45V 423nW 3.2MHz multiplying DLL with leakage-based oscillator for ultra-low-power sensor platforms

A 0.5 teraflops machine optimized for lattice QCD

A 0.6-V 82-dB delta-sigma audio ADC using switched-RC integrators

0.8 μm CMOS analog front-end processor for 4x speed CD-ROM

0.8 mu m CMOS analog front-end processor for 4X speed CD-ROM

A 0.9-V 12-mW 5-MSPS algorithmic ADC with 77-dB SFDR

0.9V 12mW 2MSPS algorithmic ADC with 81dB SFDR

009. KALLIKREIN-RELATED PROTEASES AS NOVEL THERAPEUTIC TARGETS IN PROSTATE AND OVARIAN CANCER

072 - Manganese Dioxide Nanozymes as an ROS Scavenging Therapy for Osteoarthritis

074 There are two isoforms of BP180 in the mouse brain

0792 Mandibular Movement Monitoring with Artificial Intelligence Analysis for the Diagnosis of Sleep Bruxism

O 08 - Unique T-cell subpopulation changes following combination SBPT and Nivolumab in platinum refractory HNSCC: Biomarker correlates from ROR1771

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