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Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

Solar energy materials and solar cells, 2017-01, Vol.159, p.405-411

2017

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Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

Applied physics letters, 2012-01, Vol.100 (5), p.051101-051101-4

2012

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Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells

Materials science & engineering. B, Solid-state materials for advanced technology, 2013-02, Vol.178 (2), p.142-148

2013

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Bandgap bowing in BGaN thin films

Applied physics letters, 2008-08, Vol.93 (8), p.083118-083118-3

2008

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Influence of Ga content on defects in CuInxGa1-xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy

Thin solid films, 2011-08, Vol.519 (21), p.7312-7316

2011

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Blue–violet boron-based Distributed Bragg Reflectors for VCSEL application

Journal of crystal growth, 2011-01, Vol.315 (1), p.283-287

2011

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Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

Physica status solidi. A, Applications and materials science, 2012-01, Vol.209 (1), p.25-28

2012

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Investigation of the metastability behavior of CIGS based solar cells with ZnMgO–Zn(S,O,OH) window-buffer layers

Thin solid films, 2011-08, Vol.519 (21), p.7606-7610

2011

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Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

Journal of crystal growth, 2008-03, Vol.310 (5), p.944-947

2008

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Admittance spectroscopy of cadmium free CIGS solar cells heterointerfaces

Thin solid films, 2006-07, Vol.511 (Complete), p.320-324

2006

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Electrical characterization of CIGSe solar cells metastability with Zn(S,O,OH)–ZnMgO interface buffer layers

Solar energy materials and solar cells, 2010-11, Vol.94 (11), p.1884-1888

2010

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Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

Journal of crystal growth, 2010-02, Vol.312 (5), p.641-644

2010

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Comparative study of Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current–voltage and spectral response measurements

Thin solid films, 2009-02, Vol.517 (7), p.2423-2426

2009

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Two step wet surface treatment influence on the electronic properties of Cu(In,Ga)Se2 solar cells

Thin solid films, 2009-02, Vol.517 (7), p.2550-2553

2009

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Sub-Gap Modulated Photo Current Spectroscopy performed on Cu(In x ,Ga 1 − x )(Se y ,S 1 − y ) 2 based solar cells

Thin solid films, 2009-02, Vol.517 (7), p.2256-2259

2009

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Analysis of electronic transport properties of thin film CuIn(S,Se) 2 solar cells based on electrodeposition

Thin solid films, 2008, Vol.516 (20), p.6999-7003

2008

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Comparison of optical and electrical gap of electrodeposited CuIn(S,Se) 2 determined by spectral photo response and I–V–T measurements

Thin solid films, 2007, Vol.515 (15), p.6233-6237

2007

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AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas

Journal of crystal growth, 2008-11, Vol.310 (23), p.4927-4931

2008

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Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu(In,Ga)Se2 and a-Si:H cases

Thin solid films, 2003-05, Vol.431-432 (1-2), p.135-142

2003

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Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu(In,Ga)Se 2 and a-Si:H cases

Thin solid films, 2003, Vol.431, p.135-142

2003

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Admittance spectroscopy defect density of electrodeposited CuIn(S,Se)2 and its correlation with solar cells performances

Physica status solidi. C, 2008-11, Vol.5 (11), p.3449-3452

2008

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Studies of buried interfaces Cu(In,Ga)Se 2/CdS XPS and electrical investigations

Thin solid films, 2003-05, Vol.431, p.289-295

2003

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Studies of buried interfaces Cu(In,Ga)Se2/CdS XPS and electrical investigations

Thin solid films, 2003-05, Vol.431-432 (1-2), p.289-295

2003

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XPS and electrical studies of buried interfaces in Cu(In,Ga)Se2 solar cells

Thin solid films, 2002-02, Vol.403-404, p.425-431

2002

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Subgap modulated photocurrent spectroscopy and its application to the study of the solar cell absorber defect distributions

Journal of applied physics, 2010-08, Vol.108 (4), p.043707-043707-12

2010

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Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells

Bandgap bowing in BGaN thin films

Influence of Ga content on defects in CuInxGa1-xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy

Blue–violet boron-based Distributed Bragg Reflectors for VCSEL application

Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

Investigation of the metastability behavior of CIGS based solar cells with ZnMgO–Zn(S,O,OH) window-buffer layers

Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

Admittance spectroscopy of cadmium free CIGS solar cells heterointerfaces

Electrical characterization of CIGSe solar cells metastability with Zn(S,O,OH)–ZnMgO interface buffer layers

Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

Comparative study of Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current–voltage and spectral response measurements

Two step wet surface treatment influence on the electronic properties of Cu(In,Ga)Se2 solar cells

Sub-Gap Modulated Photo Current Spectroscopy performed on Cu(In x ,Ga 1 − x )(Se y ,S 1 − y ) 2 based solar cells

Analysis of electronic transport properties of thin film CuIn(S,Se) 2 solar cells based on electrodeposition

Comparison of optical and electrical gap of electrodeposited CuIn(S,Se) 2 determined by spectral photo response and I–V–T measurements

AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas

Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu(In,Ga)Se2 and a-Si:H cases

Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu(In,Ga)Se 2 and a-Si:H cases

Admittance spectroscopy defect density of electrodeposited CuIn(S,Se)2 and its correlation with solar cells performances

Studies of buried interfaces Cu(In,Ga)Se 2/CdS XPS and electrical investigations

Studies of buried interfaces Cu(In,Ga)Se2/CdS XPS and electrical investigations

XPS and electrical studies of buried interfaces in Cu(In,Ga)Se2 solar cells

Subgap modulated photocurrent spectroscopy and its application to the study of the solar cell absorber defect distributions

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