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Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures

Applied physics letters, 2023-04, Vol.122 (17)

2023

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Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state

Applied physics letters, 2023-08, Vol.123 (9)

2023

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Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy

Journal of physics. D, Applied physics, 2022-03, Vol.55 (9), p.95110

2022

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Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures

Applied physics letters, 2021-03, Vol.118 (12)

2021

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Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.1-6

2024

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Effects of various functionalisation layers on ammonia gas sensing using AlGaN/GaN high electron mobility transistors

International journal of nanotechnology., 2020-01, Vol.17 (1), p.16

2020

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Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

Thin solid films, 2012-10, Vol.520 (24), p.7109-7114

2012

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Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

Journal of applied physics, 2015-01, Vol.117 (2)

2015

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Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si(111)

Semiconductor science and technology, 2016-09, Vol.31 (9), p.95003

2016

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Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

Journal of crystal growth, 2013-09, Vol.378, p.283-286

2013

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Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

Applied physics letters, 2010-12, Vol.97 (23), p.232107-232107-3

2010

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Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

AIP advances, 2017-01, Vol.7 (1), p.015022-015022-11

2017

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Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

Journal of applied physics, 2015-06, Vol.117 (24)

2015

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In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications

Thin solid films, 2020-08, Vol.708, p.138128, Article 138128

2020

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Realization of two-dimensional electron gas in AlGaN/GaN HEMT structure grown on Si(111) by PA-MBE

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2075-2077

2011

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A study on Ga Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

Applied surface science, 2019-07, Vol.481, p.319-326

2019

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A study on GaSi interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

Applied surface science, 2019-07, Vol.481, p.319-326

2019

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Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Journal of applied physics, 2001-08, Vol.90 (3), p.1170-1178

2001

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Wide continuous tuning range of 221nm by InP/air-gap vertical-cavity filters

Electronics letters, 2006-08, Vol.42 (17), p.974-975

2006

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Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

Solid-state electronics, 2010-11, Vol.54 (11), p.1430-1433

2010

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Wide continuous tuning range of 221 nm by InP/air-gap vertical-cavity filters

Electronics letters, 2006-08, Vol.42 (17), p.974-975

2006

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THz Oscillation in Doped-GaN Based Planar Gunn Diode with the T-shape Channel

2023 18th European Microwave Integrated Circuits Conference (EuMIC), 2023, p.289-292

2023

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Pt/AlGaN/GaN HEMT based ammonia gas sensors

2019 IEEE 9th International Nanoelectronics Conferences (INEC), 2019, p.1-5

2019

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Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)

Journal of applied physics, 2013-09, Vol.114 (12)

2013

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Effects of the ion energy on damage production in MeV ion-implanted GaAs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-04, Vol.175, p.257-261

2001

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Origin of the two-dimensional hole gas and criteria for its existence in the III-nitride heterostructures

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—Experimental evidence of the hole trap state

Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures

Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics

Effects of various functionalisation layers on ammonia gas sensing using AlGaN/GaN high electron mobility transistors

Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si(111)

Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy

Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications

Realization of two-dimensional electron gas in AlGaN/GaN HEMT structure grown on Si(111) by PA-MBE

A study on Ga Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

A study on GaSi interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Wide continuous tuning range of 221nm by InP/air-gap vertical-cavity filters

Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

Wide continuous tuning range of 221 nm by InP/air-gap vertical-cavity filters

THz Oscillation in Doped-GaN Based Planar Gunn Diode with the T-shape Channel

Pt/AlGaN/GaN HEMT based ammonia gas sensors

Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)

Effects of the ion energy on damage production in MeV ion-implanted GaAs

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