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Ion beam synthesis of buried Zn-VI quantum dots in SiO2- grazing incidence small-angle X-ray scattering studies

Journal of applied crystallography, 2003-06, Vol.36 (3-1), p.439-442

2003

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Hall effect and Raman analysis of residual damage and free electron concentration in Si-implanted GaAs: a quest for better doping efficiency

The Journal of physics and chemistry of solids, 2005-07, Vol.66 (7), p.1158-1163

2005

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The effect of temperature and pressure on the optical absorption edge in Cu6PS5X (X = Cl, Br, I) crystals

The Journal of physics and chemistry of solids, 1999-12, Vol.60 (12), p.1897-1904

1999

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The impact of deep levels on the photocurrent transients in semi-insulating gaas

Journal of electronic materials, 2003-10, Vol.32 (10), p.1100-1106

2003

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Grazing incidence small-angle X-ray scattering studies of the synthesis and growth of CdS quantum dots from constituent atoms in SiO2 matrix

Journal of applied crystallography, 2003-06, Vol.36 (3-1), p.443-446

2003

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Fundamental optical absorption edge and exciton-phonon interaction in Cu6PS5Br superionic ferroelastic

Materials science & engineering. B, Solid-state materials for advanced technology, 1998-04, Vol.52 (2-3), p.202-207

1998

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GISAXS studies of morphology and size distribution of CdS nanocrystals formed in SiO2 by ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-01, Vol.200 (Complete), p.191-195

2003

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GISAXS study of shape and size of CDS nanocrystals formed in monocrystalline silicon by ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003, Vol.200 (Complete), p.138-141

2003

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Analysis of 2D GISAXS patterns obtained on semiconductor nanocrystals

Vacuum, 2003-05, Vol.71 (1), p.65-70

2003

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Formation of CdS nanocrystals in SiO2 by ion implantation

Journal of non-crystalline solids, 2002-04, Vol.299-302 (2), p.1100-1104

2002

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Electrical and optical absorption studies of Cu7GeS5I fast-ion conductor

The Journal of physics and chemistry of solids, 2002-02, Vol.63 (2), p.267-271

2002

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UV–visible reflectivity study of the synthesis and growth of nanocrystals obtained by ion implantation

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2002-09, Vol.67 (3), p.451-455

2002

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Experimental evidence of the self-compensation mechanism in CdS

Journal of crystal growth, 1999-02, Vol.197 (3), p.612-615

1999

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The analysis of low-temperature photoconductivity evolution in semi-insulating GaAs

Journal of physics. Condensed matter, 1991-08, Vol.3 (31), p.5817-5824, Article 5817

1991

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The effect of pressure on the optical absorption edge in (Ga0.3In0.7)2Se3

Physica status solidi. A, Applied research, 1993-10, Vol.139 (2), p.513-522

1993

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GISAXS studies of structural modifications in ion-beam amorphized Ge

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-08, Vol.249 (1-2), p.114-117

2006

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Raman study of gallium arsenide thin films

Journal of non-crystalline solids, 1994-07, Vol.170 (3), p.263-269

1994

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Fundamental optical absorption edge and compositional disorder in γ1-(GaxIn1−x)2Se3 single crystals

Physica status solidi. A, Applied research, 1994-07, Vol.144 (1), p.223-233

1994

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Characterization of deep traps in semi-insulating gallium arsenide

Journal of electronic materials, 1992-04, Vol.21 (4), p.463-471

Desnica, D. I.

1992

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Complementary application of Raman scattering and GISAXS in characterization of embedded semiconductor QDs

Superlattices and microstructures, 2008-10, Vol.44 (4), p.385-394

2008

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Influence of stoichiometry deviations on properties of ion-beam synthesized CdSe QDs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-08, Vol.238 (1-4), p.302-305

2005

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Preparation and fundamental optical absorption edge of In4(P2Se6)3 single crystals

Materials research bulletin, 1999-11, Vol.34 (14-15), p.2297-2307

1999

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The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-08, Vol.238 (1-4), p.272-275

2005

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Comparative analysis of the implantation-induced structural modifications in GaAs and Ge

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-02, Vol.216, p.318-323

Desnica-Frankovic, I.D.

2004

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Direct ion beam synthesis of II–VI nanocrystals

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-02, Vol.216, p.407-413

2004

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Ion beam synthesis of buried Zn-VI quantum dots in SiO2- grazing incidence small-angle X-ray scattering studies

Hall effect and Raman analysis of residual damage and free electron concentration in Si-implanted GaAs: a quest for better doping efficiency

The effect of temperature and pressure on the optical absorption edge in Cu6PS5X (X = Cl, Br, I) crystals

The impact of deep levels on the photocurrent transients in semi-insulating gaas

Grazing incidence small-angle X-ray scattering studies of the synthesis and growth of CdS quantum dots from constituent atoms in SiO2 matrix

Fundamental optical absorption edge and exciton-phonon interaction in Cu6PS5Br superionic ferroelastic

GISAXS studies of morphology and size distribution of CdS nanocrystals formed in SiO2 by ion implantation

GISAXS study of shape and size of CDS nanocrystals formed in monocrystalline silicon by ion implantation

Analysis of 2D GISAXS patterns obtained on semiconductor nanocrystals

Formation of CdS nanocrystals in SiO2 by ion implantation

Electrical and optical absorption studies of Cu7GeS5I fast-ion conductor

UV–visible reflectivity study of the synthesis and growth of nanocrystals obtained by ion implantation

Experimental evidence of the self-compensation mechanism in CdS

The analysis of low-temperature photoconductivity evolution in semi-insulating GaAs

The effect of pressure on the optical absorption edge in (Ga0.3In0.7)2Se3

GISAXS studies of structural modifications in ion-beam amorphized Ge

Raman study of gallium arsenide thin films

Fundamental optical absorption edge and compositional disorder in γ1-(GaxIn1−x)2Se3 single crystals

Characterization of deep traps in semi-insulating gallium arsenide

Complementary application of Raman scattering and GISAXS in characterization of embedded semiconductor QDs

Influence of stoichiometry deviations on properties of ion-beam synthesized CdSe QDs

Preparation and fundamental optical absorption edge of In4(P2Se6)3 single crystals

The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2

Comparative analysis of the implantation-induced structural modifications in GaAs and Ge

Direct ion beam synthesis of II–VI nanocrystals

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