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InGaAs-Based MSM Photodetector: Researching Absorption Layer, Barrier Layer, and Digital Graded Superlattice Layer with 3D Simulation

Results in optics, 2023-12, Vol.13, p.100581, Article 100581

2023

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Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry

Brazilian journal of physics, 2022-10, Vol.52 (5), Article 184

2022

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Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy

Journal of materials science. Materials in electronics, 2021-10, Vol.32 (20), p.25507-25515

2021

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Dating involvement among Turkish adolescents: The role of parental attitudes about dating, social anxiety and social physique anxiety

Current psychology (New Brunswick, N.J.), 2022-05, Vol.41 (5), p.2624-2632

Demir, Ilkay

2022

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Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE

Journal of molecular structure, 2023-01, Vol.1272, p.134203, Article 134203

2023

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Exploring Romantic Relationship Patterns among Turkish Emerging Adults: A Grounded Theory Study

Emerging adulthood (Thousand Oaks, CA), 2023-02, Vol.11 (1), p.88-102

2023

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Optical and nano-mechanical characterization of c-axis oriented AlN film

Optical materials, 2022-07, Vol.129, p.112480, Article 112480

2022

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Characterization of SiNx grown at different nitrogen flow and prediction of refractive index using artificial neural networks

Physica. B, Condensed matter, 2024-09, p.416581, Article 416581

2024

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The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN

Gazi University Journal of Science, 2022-01, Vol.35 (1), p.281-291

2022

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Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE

Journal of electronic materials, 2023-09, Vol.52 (9), p.6042-6051

2023

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Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers

Optics and laser technology, 2022-08, Vol.152, p.108156, Article 108156

2022

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In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN

Vacuum, 2022-11, Vol.205, p.111455, Article 111455

2022

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In-situ and ex-situ face-to-face annealing of epitaxial AlN

Vacuum, 2022-09, Vol.203, p.111284, Article 111284

2022

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Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (100) InP for SWIR detectors

Materials science & engineering. B, Solid-state materials for advanced technology, 2020-12, Vol.262, p.114769, Article 114769

2020

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Real, imaginary and complex branches of Lamb waves in p-type piezoelectric semiconductor GaAs plate: Numerical and experimental investigation

Materials science in semiconductor processing, 2024-11, Vol.183, p.108743, Article 108743

2024

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High-quality AlN growth: a detailed study on ammonia flow

Journal of materials science. Materials in electronics, 2023-02, Vol.34 (4), p.250, Article 250

2023

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Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation

Materials science in semiconductor processing, 2023-01, Vol.153, p.107149, Article 107149

2023

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The Development and Current State of Youth Research in Turkey: An Overview

Young (Stockholm, Sweden), 2012-02, Vol.20 (1), p.89-114

Demir, Ilkay

2012

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Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

Materials science in semiconductor processing, 2021-06, Vol.127, p.105733, Article 105733

2021

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Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP

Materials science in semiconductor processing, 2022-03, Vol.140, p.106411, Article 106411

2022

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Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

Semiconductor science and technology, 2018-05, Vol.33 (5), p.55005

2018

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AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH 4 and TMIn

Semiconductor science and technology, 2019-07, Vol.34 (7), p.75028

2019

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High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate

Materials science in semiconductor processing, 2019-02, Vol.90, p.87-91

2019

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Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE

Materials science in semiconductor processing, 2022-05, Vol.142, p.106464, Article 106464

2022

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The contribution of AsH3: Pre-flow and V/III ratio effects on heteroepitaxially grown GaAs/Ge

Superlattices and microstructures, 2019-04, Vol.128, p.1-8

Demir, Ilkay

2019

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InGaAs-Based MSM Photodetector: Researching Absorption Layer, Barrier Layer, and Digital Graded Superlattice Layer with 3D Simulation

Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry

Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy

Dating involvement among Turkish adolescents: The role of parental attitudes about dating, social anxiety and social physique anxiety

Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE

Exploring Romantic Relationship Patterns among Turkish Emerging Adults: A Grounded Theory Study

Optical and nano-mechanical characterization of c-axis oriented AlN film

Characterization of SiNx grown at different nitrogen flow and prediction of refractive index using artificial neural networks

The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN

Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE

Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers

In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN

In-situ and ex-situ face-to-face annealing of epitaxial AlN

Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (100) InP for SWIR detectors

Real, imaginary and complex branches of Lamb waves in p-type piezoelectric semiconductor GaAs plate: Numerical and experimental investigation

High-quality AlN growth: a detailed study on ammonia flow

Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation

The Development and Current State of Youth Research in Turkey: An Overview

Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)

Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP

Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH 4 and TMIn

High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate

Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE

The contribution of AsH3: Pre-flow and V/III ratio effects on heteroepitaxially grown GaAs/Ge

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