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Reflection high-energy electron diffraction electron-stimulated desorption from ZnSe(100)(2×1)-Se surfaces

Journal of applied physics, 1989-05, Vol.65 (10), p.4084-4086

1989

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Electric field screening by photogenerated holes in multiple quantum wells : a new mechanism for absorption saturation

Applied physics letters, 1990-09, Vol.57 (11), p.1081-1083

1990

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Etching and cathodoluminescence studies of ZnSe

Applied physics letters, 1988-08, Vol.53 (8), p.690-691

1988

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Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Gamma -X mixing

Physical review letters, 1988-03, Vol.60 (13), p.1338-1341

1988

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Short-cavity distributed Bragg reflector laser with an integrated tapered output waveguide

IEEE photonics technology letters, 1991-05, Vol.3 (5), p.418-420

1991

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IEEE_Xplore

Useful formulas for multimode interference power splitter/combiner design

IEEE photonics technology letters, 1993-10, Vol.5 (10), p.1224-1227

1993

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IEEE_Xplore

Optimal GaAs(100) substrate terminations for heteroepitaxy

Applied physics letters, 1991-01, Vol.58 (4), p.355-357

1991

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Photoluminescence characterization of ZnSe doped with Ga by bulk and planar doping techniques in molecular-beam epitaxy

Journal of applied physics, 1989-05, Vol.65 (10), p.3999-4005

1989

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Low threshold highly efficient strained quantum well lasers at 1.5 micrometre wavelength

Electronics letters, 1990, Vol.26 (7), p.465-467

1990

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Planar doping with gallium of molecular beam epitaxial ZnSe

Applied physics letters, 1988-11, Vol.53 (21), p.2065-2067

1988

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Designer interfaces in II-VI/III-V polar heteroepitaxy

Journal of applied physics, 1991-05, Vol.69 (10), p.7021-7028

1991

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Atomic layer molecular beam epitaxy of InAs/AlAs heterostructures

Journal of crystal growth, 1990-06, Vol.102 (4), p.891-898

1990

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Integration of 1.3 micron wavelength lasers and amplifiers

12th IEEE International Conference on Semiconductor Laser, 1990, p.162-163

1990

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InAs strained-layer quantum wells with band gaps in the 1.2–1.6 μm wavelength range

Applied physics letters, 1988-03, Vol.52 (11), p.892-894

1988

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Fault diagnosis system based on sensitivity analysis and fuzzy logic

Proceedings / International Symposium on Multiple-Valued Logic, 1996, p.50-55

1996

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IEEE_Xplore

Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe

Applied physics letters, 1988-11, Vol.53 (22), p.2217-2219

1988

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Modified excitonic resonances in GaAs/AlAs multiple quantum well heterostructures with ultrathin barriers

Applied Physics A Solids and Surfaces, 1987-12, Vol.44 (4), p.323-328

1987

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Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy

Journal of applied physics, 1989-11, Vol.66 (9), p.4295-4300

1989

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Resonant raman scattering in GaAsAlAs coupled double wells

Surface science, 1990-04, Vol.228 (1), p.176-179

1990

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Surface Stoichiometry and Morphology of MBE Grown (001)GaAs through the Analysis of RHEED Oscillations

Japanese Journal of Applied Physics, 1985-06, Vol.24 (6A), p.L478-L480

1985

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Type II indirect gap superlattices under intense optical excitation

Journal of luminescence, 1991, Vol.48, p.731-734

1991

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Effect of barrier thickness on the luminescence properties of AlAs/GaAs multiple quantum wells grown by molecular beam epitaxy

Applied physics letters, 1985-10, Vol.47 (8), p.836-838

1985

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Hydrogen sulphide doping of GaAs and AlxGa1-xAs grown by molecular beam epitaxy (MBE)

Applied Physics A Solids and Surfaces, 1985-03, Vol.36 (3), p.147-151

1985

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Improved heterointerface and vertical transport in GaAs single quantum well confined by all-binary GaAs/AlAs short-period-superlattices

Japanese Journal of Applied Physics, 1985-06, Vol.24 (6), p.L405-L407

1985

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Electric Field Enhanced Generation Current in Proton Irradiated InGaAs Photodiodes

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1

2023

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IEEE_Xplore

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Reflection high-energy electron diffraction electron-stimulated desorption from ZnSe(100)(2×1)-Se surfaces

Electric field screening by photogenerated holes in multiple quantum wells : a new mechanism for absorption saturation

Etching and cathodoluminescence studies of ZnSe

Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Gamma -X mixing

Short-cavity distributed Bragg reflector laser with an integrated tapered output waveguide

Useful formulas for multimode interference power splitter/combiner design

Optimal GaAs(100) substrate terminations for heteroepitaxy

Photoluminescence characterization of ZnSe doped with Ga by bulk and planar doping techniques in molecular-beam epitaxy

Low threshold highly efficient strained quantum well lasers at 1.5 micrometre wavelength

Planar doping with gallium of molecular beam epitaxial ZnSe

Designer interfaces in II-VI/III-V polar heteroepitaxy

Atomic layer molecular beam epitaxy of InAs/AlAs heterostructures

Integration of 1.3 micron wavelength lasers and amplifiers

InAs strained-layer quantum wells with band gaps in the 1.2–1.6 μm wavelength range

Fault diagnosis system based on sensitivity analysis and fuzzy logic

Reduction of defects and inhomogeneous strain in heteroepitaxial ZnSe

Modified excitonic resonances in GaAs/AlAs multiple quantum well heterostructures with ultrathin barriers

Electrical characterization of gallium planar-doped ZnSe grown by molecular-beam epitaxy

Resonant raman scattering in GaAsAlAs coupled double wells

Surface Stoichiometry and Morphology of MBE Grown (001)GaAs through the Analysis of RHEED Oscillations

Type II indirect gap superlattices under intense optical excitation

Effect of barrier thickness on the luminescence properties of AlAs/GaAs multiple quantum wells grown by molecular beam epitaxy

Hydrogen sulphide doping of GaAs and AlxGa1-xAs grown by molecular beam epitaxy (MBE)

Improved heterointerface and vertical transport in GaAs single quantum well confined by all-binary GaAs/AlAs short-period-superlattices

Electric Field Enhanced Generation Current in Proton Irradiated InGaAs Photodiodes

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