UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Family Functioning Affected by Adolescent Idiopathic Scoliosis in China: A Cross-Sectional Study

Frontiers in pediatrics, 2022-07, Vol.10, p.880360-880360

2022

Volltextzugriff (PDF)

Total Ionizing Dose (TID) Effects on TaOx-Based Resistance Change Memory

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2800-2804

2011

Volltextzugriff (PDF)

Unipolar TaOx-Based Resistive Change Memory Realized With Electrode Engineering

IEEE electron device letters, 2010-09, Vol.31 (9), p.966-968

2010

Volltextzugriff (PDF)

In Response to Ear Reconstruction: Empirical Data of 406 Cases of Carving the Convex Structures of the Framework

The Laryngoscope, 2023-06, Vol.133 (6), p.E41-E41

2023

Volltextzugriff (PDF)

Genetic causal relationship between gut microbiota and basal cell carcinoma: A two‐sample mendelian randomization study

Skin research and technology, 2024-06, Vol.30 (6), p.e13804-n/a

2024

Volltextzugriff (PDF)

Causal relationship between sex hormones and cutaneous melanoma: a two-sample Mendelian randomized study

Melanoma research, 2024-10, Vol.34 (5), p.408-418

2024

Volltextzugriff (PDF)

Single-stage Auricular Reconstruction in Hemifacial Microsomia With Low Hairline by Using Temporoparietal Fascia Flap

The Journal of craniofacial surgery, 2024-09, Vol.35 (6), p.1855-1858

2024

Volltextzugriff (PDF)

Study on the Incidence of Congenital Genitourinary System Malformations in Congenital Microtia Patients

The Journal of craniofacial surgery, 2024-03, Vol.35 (2), p.e156-e158

2024

Volltextzugriff (PDF)

Unipolar Resistive Switch Based on Silicon Monoxide Realized by CMOS Technology

IEEE electron device letters, 2009-08, Vol.30 (8), p.870-872

2009

Volltextzugriff (PDF)

Total Ionizing Dose (TID) Effects on \hbox -Based Resistance Change Memory

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2800-2804

2011

Volltextzugriff (PDF)

Rare Combination of Congenital Microtia and Limb Malformations: Analysis of Etiology and Treatment

The Journal of craniofacial surgery, 2024-10

2024

Volltextzugriff (PDF)

Unipolar \hbox-Based Resistive Change Memory Realized With Electrode Engineering

IEEE electron device letters, 2010-09, Vol.31 (9), p.966-968

2010

Volltextzugriff (PDF)

Management of Bone Bridge Exposure Using Superficial Temporal Island Flap After Auricle Reconstruction and Bone Bridge Implantation

The Journal of craniofacial surgery, 2024-10, Vol.35 (7), p.e667-e670

2024

Volltextzugriff (PDF)

Genetic Causal Relationship Between Sex Hormones and Basal Cell Carcinoma: A Two-Sample Mendelian Randomization Study

Clinical, cosmetic and investigational dermatology, 2024-01, Vol.17, p.2077-2088

2024

Volltextzugriff (PDF)

Strategies of Total Auricular Reconstruction for Patients With Poor Skin Coverage at the Mastoid Area

Ear, nose, & throat journal, 2023-02, p.1455613231158905-1455613231158905

2023

Volltextzugriff (PDF)

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications

Applied physics. A, Materials science & processing, 2011-03, Vol.102 (4), p.927-931

2011

Volltextzugriff (PDF)

Investigation of thermally robust single-component resistive switching organic memory cell

2009 Device Research Conference, 2009, p.137-138

2009

Volltextzugriff (PDF)

Total Ionizing Dose (TID) Effects on hbox TaO x -Based Resistance Change Memory

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2800-2804

2011

Volltextzugriff (PDF)

Total Ionizing Dose (TID) Effects on [Formula Omitted]-Based Resistance Change Memory

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2800

2011

Volltextzugriff (PDF)

Unipolar [Formula Omitted]-Based Resistive Change Memory Realized With Electrode Engineering

IEEE electron device letters, 2010-09, Vol.31 (9), p.966

2010

Volltextzugriff (PDF)

Unipolar hbox TaO x -Based Resistive Change Memory Realized With Electrode Engineering

IEEE electron device letters, 2010-09, Vol.31 (9), p.966-968

2010

Volltextzugriff (PDF)

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications: Memristive and Resistive Devices and Systems

Applied physics. A, Materials science & processing, 2011, Vol.102 (4), p.927-931

2011

Volltextzugriff (PDF)

Forming-Less Unipolar TaO x -Based RRAM with Large CC-Independence Range for High Density Memory Applications

ECS transactions, 2010-11, Vol.27 (1), p.3-8

2010

Volltextzugriff (PDF)

Thermally stable TaOx-based resistive memory with TiN electrode for MLC application

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010, p.1160-1162

2010

Volltextzugriff (PDF)

A novel nitrogen-doped SiOx resistive switching memory with low switching voltages

2010 Silicon Nanoelectronics Workshop, 2010, p.1-2

2010

Volltextzugriff (PDF)

1 – 25 von 74

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(60)
Mit Volltextzugriff
(62)

Publikationsform

Artikel
(62)
Tagungsberichte
(12)

Sprache

Englisch
(72)
Chinesisch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(51)
Technology
(25)
Physical Sciences
(21)
Engineering
(18)
Life Sciences & Biomedicine
(12)
Engineering, Electrical & Electronic
(9)
Materials Science
(9)
Physics
(9)
Physics, Applied
(8)
Chemistry
(7)
Electrodes
(7)
Humans
(6)
Exact Sciences And Technology
(5)
Switches
(5)
Voltage
(5)
Applied Sciences
(4)
Automation & Control Systems
(4)
Cae) And Design
(4)
Computer Science
(4)
Computer-Aided Engineering (cad
(4)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Family Functioning Affected by Adolescent Idiopathic Scoliosis in China: A Cross-Sectional Study

Total Ionizing Dose (TID) Effects on TaOx-Based Resistance Change Memory

Unipolar TaOx-Based Resistive Change Memory Realized With Electrode Engineering

In Response to Ear Reconstruction: Empirical Data of 406 Cases of Carving the Convex Structures of the Framework

Genetic causal relationship between gut microbiota and basal cell carcinoma: A two‐sample mendelian randomization study

Causal relationship between sex hormones and cutaneous melanoma: a two-sample Mendelian randomized study

Single-stage Auricular Reconstruction in Hemifacial Microsomia With Low Hairline by Using Temporoparietal Fascia Flap

Study on the Incidence of Congenital Genitourinary System Malformations in Congenital Microtia Patients

Unipolar Resistive Switch Based on Silicon Monoxide Realized by CMOS Technology

Total Ionizing Dose (TID) Effects on \hbox -Based Resistance Change Memory

Rare Combination of Congenital Microtia and Limb Malformations: Analysis of Etiology and Treatment

Unipolar \hbox-Based Resistive Change Memory Realized With Electrode Engineering

Management of Bone Bridge Exposure Using Superficial Temporal Island Flap After Auricle Reconstruction and Bone Bridge Implantation

Genetic Causal Relationship Between Sex Hormones and Basal Cell Carcinoma: A Two-Sample Mendelian Randomization Study

Strategies of Total Auricular Reconstruction for Patients With Poor Skin Coverage at the Mastoid Area

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications

Investigation of thermally robust single-component resistive switching organic memory cell

Total Ionizing Dose (TID) Effects on hbox TaO x -Based Resistance Change Memory

Total Ionizing Dose (TID) Effects on [Formula Omitted]-Based Resistance Change Memory

Unipolar [Formula Omitted]-Based Resistive Change Memory Realized With Electrode Engineering

Unipolar hbox TaO x -Based Resistive Change Memory Realized With Electrode Engineering

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications: Memristive and Resistive Devices and Systems

Forming-Less Unipolar TaO x -Based RRAM with Large CC-Independence Range for High Density Memory Applications

Thermally stable TaOx-based resistive memory with TiN electrode for MLC application

A novel nitrogen-doped SiOx resistive switching memory with low switching voltages

Suchergebnisse filtern