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Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

Nano letters, 2015-12, Vol.15 (12), p.7970-7975

2015

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A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS

IEEE journal of solid-state circuits, 2019-10, Vol.54 (10), p.2765-2776

2019

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Chalcogenide Ovonic Threshold Switching Selector

Nano-micro letters, 2024-12, Vol.16 (1), p.81-81, Article 81

2024

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An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage

Micromachines (Basel), 2024-06, Vol.15 (6), p.769

2024

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Dielectric Films for Advanced Microelectronics

1. Aufl., 2007

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Postcycling LRS Retention Analysis in HfO2/Hf RRAM 1T1R Device

IEEE electron device letters, 2013-05, Vol.34 (5), p.626-628

2013

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Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers

Thin solid films, 2011-10, Vol.520 (1), p.662-666

2011

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Endurance/Retention Trade-off on \hbox/\hbox Cap 1T1R Bipolar RRAM

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1114-1121

2013

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Oxide Trapping in the InGaAs- \hbox \hbox System and the Role of Sulfur in Reducing the \hbox\hbox Trap Density

IEEE electron device letters, 2012-11, Vol.33 (11), p.1544-1546

2012

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Fault Attack Investigation on TaO x Resistive-RAM for Cyber Secure Application

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4170-4177

2023

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Fault Attack Investigation on TaOx Resistive-RAM for Cyber Secure Application

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4170-4177

2023

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Benchmarking of Machine Learning Methods for Multiscale Thermal Simulation of Integrated Circuits

IEEE transactions on computer-aided design of integrated circuits and systems, 2023-07, Vol.42 (7), p.2264-2275

2023

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Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices

The journal of physical chemistry letters, 2015-05, Vol.6 (10), p.1919-1924

2015

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Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress Condition

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6512-6519

2023

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Hot-Electron-Induced Punch-Through (HEIP) Effect in p-MOSFET Enhanced by Mechanical Stress

IEEE electron device letters, 2021-10, Vol.42 (10), p.1424-1427

2021

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Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1114-1121

2013

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A multi-energy level agnostic approach for defect generation during TDDB stress

Solid-state electronics, 2022-07, Vol.193, p.108298, Article 108298

2022

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A multi-energy level agnostic simulation approach to defect generation

Solid-state electronics, 2021-10, Vol.184, p.108056, Article 108056

2021

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Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.2276-2281

2023

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Balancing SET/RESET Pulse for > 1010 Endurance in HfO2/Hf 1T1R Bipolar RRAM

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3243-3249

2012

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Modeling and Demonstration of Oxygen Vacancy-Based RRAM as Probabilistic Device for Sequence Learning

IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.505-511

2020

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Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4002-4007

2013

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Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching

IEEE electron device letters, 2022-07, Vol.43 (7), p.1061-1064

2022

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Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector

IEEE electron device letters, 2021-10, Vol.42 (10), p.1448-1451

2021

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New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.812-818

2023

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Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS

Chalcogenide Ovonic Threshold Switching Selector

An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage

Dielectric Films for Advanced Microelectronics

Postcycling LRS Retention Analysis in HfO2/Hf RRAM 1T1R Device

Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers

Endurance/Retention Trade-off on \hbox/\hbox Cap 1T1R Bipolar RRAM

Oxide Trapping in the InGaAs- \hbox \hbox System and the Role of Sulfur in Reducing the \hbox\hbox Trap Density

Fault Attack Investigation on TaO x Resistive-RAM for Cyber Secure Application

Fault Attack Investigation on TaOx Resistive-RAM for Cyber Secure Application

Benchmarking of Machine Learning Methods for Multiscale Thermal Simulation of Integrated Circuits

Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices

Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress Condition

Hot-Electron-Induced Punch-Through (HEIP) Effect in p-MOSFET Enhanced by Mechanical Stress

Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM

A multi-energy level agnostic approach for defect generation during TDDB stress

A multi-energy level agnostic simulation approach to defect generation

Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch

Balancing SET/RESET Pulse for > 1010 Endurance in HfO2/Hf 1T1R Bipolar RRAM

Modeling and Demonstration of Oxygen Vacancy-Based RRAM as Probabilistic Device for Sequence Learning

Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs

Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching

Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector

New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

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