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Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO2/Si substrate

Nanotechnology, 2020-03, Vol.31 (13), p.135205-135205

2020

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Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO 2 /Si substrate

Nanotechnology, 2020-03, Vol.31 (13), p.135205

2020

Volltextzugriff (PDF)

Detailed analysis of III-V/epi-SiGe tandem solar cell performance including light trapping schemes

Solar energy materials and solar cells, 2017-07, Vol.166, p.276-285

2017

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Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer

Journal of crystal growth, 2013-05, Vol.370, p.154-156

2013

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240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes

IEEE photonics technology letters, 2010-09, Vol.22 (18), p.1373-1375

2010

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Recent advances in avalanche photodiodes

IEEE journal of selected topics in quantum electronics, 2004-07, Vol.10 (4), p.777-787

2004

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80 GHz compact photonic microwave generation from a solitary distributed feedback laser on silicon

2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2

2022

Volltextzugriff (PDF)

In Situ Generation of Surface Plasmon Polaritons Using a Near-Infrared Laser Diode

Nano letters, 2012-09, Vol.12 (9), p.4693-4697

2012

Volltextzugriff (PDF)

Near-field analysis of metallic DFB lasers at telecom wavelengths

Optics express, 2013-05, Vol.21 (9), p.10422-10429

2013

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Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits

Journal of crystal growth, 2013-05, Vol.370, p.128-132

2013

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Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

Optical materials express, 2017-02, Vol.7 (2), p.376-385

2017

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Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4

Journal of crystal growth, 2008-11, Vol.310 (23), p.4813-4817

2008

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Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy

Journal of crystal growth, 2007, Vol.298, p.28-31

2007

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Analysis of thermal limitations in high-speed microcavity saturable absorber all-optical switching gates

Journal of lightwave technology, 2006-09, Vol.24 (9), p.3400-3408

2006

Volltextzugriff (PDF)

GaSb-based solar cells for multi-junction integration on Si substrates

Solar energy materials and solar cells, 2019-03, Vol.191, p.444-450

2019

Volltextzugriff (PDF)

Demonstration of planar thick InP layers by selective MOVPE

Journal of crystal growth, 2008-11, Vol.310 (23), p.4795-4798

2008

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180-GHz Gain-Bandwidth Product Back-Side-Illuminated GaInAs-AlInAs APDs

IEEE photonics technology letters, 2009-06, Vol.21 (11), p.712-714

2009

Volltextzugriff (PDF)

Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm

Applied physics letters, 2003-12, Vol.83 (26), p.5551-5553

2003

Volltextzugriff (PDF)

Micro-Raman for compositions characterization of selective area growth of AlxGayIn1-x-yAs materials by metal-organic vapor-phase epitaxy

Journal of crystal growth, 2008-11, Vol.310 (23), p.4741-4746

2008

Volltextzugriff (PDF)

High power single-longitudinal-mode OP-VECSEL at 1.55 μm with hybrid metal-metamorphic Bragg mirror

Electronics letters, 2007-07, Vol.43 (14), p.754-755

2007

Volltextzugriff (PDF)

A hybrid electroabsorption modulator device for generation of high spectral-efficiency optical modulation formats

Optics express, 2008-06, Vol.16 (12), p.8480-8486

2008

Volltextzugriff (PDF)

MOVPE growth of AlGaInAs–InP highly tensile-strained MQWs for 1.3 μm low-threshold lasers

Journal of crystal growth, 2004-12, Vol.272 (1), p.543-548

2004

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Te doping of GaAs and GaInP using diisopropyl telluride (DIPTe) for tunnel junction applications

Journal of crystal growth, 2018-09, Vol.498, p.301-306

2018

Volltextzugriff (PDF)

Laser Array Covering 155 nm Wide Spectral Band Achieved by Selective Area Growth on Silicon Wafer

2020 European Conference on Optical Communications (ECOC), 2020, Vol.128 (13), p.1-4

2020

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Tunable doped-fibre vertical cavity surface emitting laser

Electronics letters, 2009, Vol.45 (17), p.887-888

2009

Volltextzugriff (PDF)

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Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO2/Si substrate

Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO 2 /Si substrate

Detailed analysis of III-V/epi-SiGe tandem solar cell performance including light trapping schemes

Structural characterization of selectively grown multilayers with new high angular resolution and sub-millimeter spot-size x-ray diffractometer

240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes

Recent advances in avalanche photodiodes

80 GHz compact photonic microwave generation from a solitary distributed feedback laser on silicon

In Situ Generation of Surface Plasmon Polaritons Using a Near-Infrared Laser Diode

Near-field analysis of metallic DFB lasers at telecom wavelengths

Micro-characterization and three dimensional modeling of very large waveguide arrays by selective area growth for photonic integrated circuits

Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4

Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy

Analysis of thermal limitations in high-speed microcavity saturable absorber all-optical switching gates

GaSb-based solar cells for multi-junction integration on Si substrates

Demonstration of planar thick InP layers by selective MOVPE

180-GHz Gain-Bandwidth Product Back-Side-Illuminated GaInAs-AlInAs APDs

Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm

Micro-Raman for compositions characterization of selective area growth of AlxGayIn1-x-yAs materials by metal-organic vapor-phase epitaxy

High power single-longitudinal-mode OP-VECSEL at 1.55 μm with hybrid metal-metamorphic Bragg mirror

A hybrid electroabsorption modulator device for generation of high spectral-efficiency optical modulation formats

MOVPE growth of AlGaInAs–InP highly tensile-strained MQWs for 1.3 μm low-threshold lasers

Te doping of GaAs and GaInP using diisopropyl telluride (DIPTe) for tunnel junction applications

Laser Array Covering 155 nm Wide Spectral Band Achieved by Selective Area Growth on Silicon Wafer

Tunable doped-fibre vertical cavity surface emitting laser

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