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A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate

IEEE electron device letters, 2004-03, Vol.25 (3), p.135-137

2004

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Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.288-289

2022

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Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications

Microelectronic engineering, 2003-09, Vol.69 (2-4), p.145-151

2003

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SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

Applied physics letters, 2001-02, Vol.78 (9), p.1267-1269

2001

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Electron and hole mobility enhancement in strained SOI by wafer bonding

IEEE transactions on electron devices, 2002-09, Vol.49 (9), p.1566-1571

2002

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Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

Microelectronic engineering, 2001-11, Vol.59 (1), p.341-349

2001

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Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100)

Applied physics letters, 2004-09, Vol.85 (12), p.2334-2336

2004

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SOI lateral bipolar transistor with drive current >3mA/μm

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013, p.1-2

2013

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Charge trapping and detrapping in HfO2 high-κ gate stacks

Microelectronic engineering, 2004-04, Vol.72 (1-4), p.273-277

2004

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Double spin-torque magnetic tunnel junction devices for last-level cache applications

2022 International Electron Devices Meeting (IEDM), 2022, p.10.2.1-10.2.4

2022

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Bias-temperature instabilities and radiation effects in MOS devices

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2231-2238

2005

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Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.2.6.1-2.6.4

2019

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2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction

2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.2.5.1-2.5.4

2021

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High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.39.5.1-39.5.4

2018

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STT-MRAM - Status and Outlook

2022 IEEE 33rd Magnetic Recording Conference (TMRC), 2022, p.1-2

2022

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Demonstration of narrow switching distributions in STTMRAM arrays for LLC applications at 1x nm node

2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.24.4.1-24.4.4

2020

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Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al2O3/SiOxNy/Si(100) gate stacks

Applied physics letters, 2003-12, Vol.83 (25), p.5232-5234

2003

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Charge detrapping in HfO2 high-κ gate dielectric stacks

Applied physics letters, 2003-12, Vol.83 (25), p.5223-5225

2003

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Universal tunneling behavior in technologically relevant P/N junction diodes

Journal of applied physics, 2004-05, Vol.95 (10), p.5800-5812

2004

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Silicon Device-based Electronic Biosensors for Sustainability and Healthcare

2024 31st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2024, p.155-157

2024

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Optimization of pH sensing using silicon nanowire field effect transistors with HfO sub(2) as the sensing surface

Nanotechnology, 2011-10, Vol.22 (40), p.405501-1-6

2011

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Ultrathin high-K gate stacks for advanced CMOS devices

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.20.1.1-20.1.4

2001

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Nitrogen interface engineering in Al2O3 capacitors for improved thermal stability

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2004-09, Vol.22 (5), p.2462-2466

2004

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High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length

2017 Symposium on VLSI Technology, 2017, p.T40-T41

2017

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A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation

Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate

Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions

Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications

SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

Electron and hole mobility enhancement in strained SOI by wafer bonding

Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100)

SOI lateral bipolar transistor with drive current >3mA/μm

Charge trapping and detrapping in HfO2 high-κ gate stacks

Double spin-torque magnetic tunnel junction devices for last-level cache applications

Bias-temperature instabilities and radiation effects in MOS devices

Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications

2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction

High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy

STT-MRAM - Status and Outlook

Demonstration of narrow switching distributions in STTMRAM arrays for LLC applications at 1x nm node

Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al2O3/SiOxNy/Si(100) gate stacks

Charge detrapping in HfO2 high-κ gate dielectric stacks

Universal tunneling behavior in technologically relevant P/N junction diodes

Silicon Device-based Electronic Biosensors for Sustainability and Healthcare

Optimization of pH sensing using silicon nanowire field effect transistors with HfO sub(2) as the sensing surface

Ultrathin high-K gate stacks for advanced CMOS devices

Nitrogen interface engineering in Al2O3 capacitors for improved thermal stability

High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length

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