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High-speed III-V nanowire photodetector monolithically integrated on Si

Nature communications, 2020-09, Vol.11 (1), p.4565-4565, Article 4565

2020

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Self-aligned gates for scalable silicon quantum computing

Applied physics letters, 2021-03, Vol.118 (10)

2021

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Integrated gallium phosphide nonlinear photonics

Nature photonics, 2020-01, Vol.14 (1), p.57-62

2020

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Large Pockels effect in micro- and nanostructured barium titanate integrated on silicon

Nature materials, 2019-01, Vol.18 (1), p.42-47

2019

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A Hybrid Barium Titanate-Silicon Photonics Platform for Ultraefficient Electro-Optic Tuning

Journal of lightwave technology, 2016-04, Vol.34 (8), p.1688-1693

2016

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Elucidating the Surface Reactions of an Amorphous Si Thin Film as a Model Electrode for Li-Ion Batteries

ACS applied materials & interfaces, 2016-11, Vol.8 (43), p.29791-29798

2016

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High-speed CMOS-compatible III-V on Si membrane photodetectors

Optics express, 2021-01, Vol.29 (1), p.509

2021

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InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities

Materials, 2018-12, Vol.12 (1), p.87

2018

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Impact of Floating Body Effect, Back-Gate Traps, and Trap-Assisted Tunneling on Scaled In0.53Ga0.47As Ultrathin-Body MOSFETs and Mitigation Measures

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2578-2584

2018

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Electrochemical Performance of All-Solid-State Li-Ion Batteries Based on Garnet Electrolyte Using Silicon as a Model Electrode

ACS energy letters, 2018-04, Vol.3 (4), p.1006-1012

2018

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Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(001)

Microelectronic engineering, 2015-11, Vol.147, p.215-218

2015

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Three-dimensional monolithic integration of III-V and Si(Ge) FETs for hybrid CMOS and beyond

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S), p.4-04CA05

2017

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Gallium Phosphide-on-Silicon Dioxide Photonic Devices

Journal of lightwave technology, 2018-07, Vol.36 (14), p.2994-3002

2018

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A BaTiO3-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform

Journal of lightwave technology, 2019-03, Vol.37 (5), p.1456-1462

2019

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Low-resistive, CMOS-compatible ohmic contact schemes to moderately doped n-InP

Journal of physics. D, Applied physics, 2017-06, Vol.50 (23), p.235102

2017

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20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon

IEEE journal of solid-state circuits, 2019-09, Vol.54 (9), p.2411-2418

2019

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A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon

Nature electronics, 2021-02, Vol.4 (2), p.162-170

2021

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High-Frequency Quantum Well InGaAs-on-Si MOSFETs With Scaled Gate Lengths

IEEE electron device letters, 2019-04, Vol.40 (4), p.538-541

2019

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Highly selective dry etching of GaP in the presence of Al x Ga 1–x P with a SiCl 4 /SF 6 plasma

Journal of physics. D, Applied physics, 2018-05, Vol.51 (18), p.185203

2018

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Optomechanics with one-dimensional gallium phosphide photonic crystal cavities

Optica, 2019-05, Vol.6 (5), p.577

2019

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Highly selective dry etching of GaP in the presence of AlxGa1-xP with a SiCl4/SF6 plasma

Journal of physics. D, Applied physics, 2018-04, Vol.51 (18)

2018

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Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon

ACS photonics, 2019-11, Vol.6 (11), p.2677-2684

2019

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Monolithically Integrated CMOS-Compatible III-V on Silicon Lasers

IEEE journal of selected topics in quantum electronics, 2018-11, Vol.24 (6), p.1-9

2018

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20-nm In 0.8 Ga 0.2 As MOSHEMT MMIC Technology on Silicon

IEEE journal of solid-state circuits, 2019-09, Vol.54 (9), p.2411-2418

2019

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High-performance InGaAs FinFETs with raised source/drain extensions

Japanese Journal of Applied Physics, 2019-08, Vol.58 (8), p.80901

2019

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High-speed III-V nanowire photodetector monolithically integrated on Si

Self-aligned gates for scalable silicon quantum computing

Integrated gallium phosphide nonlinear photonics

Large Pockels effect in micro- and nanostructured barium titanate integrated on silicon

A Hybrid Barium Titanate-Silicon Photonics Platform for Ultraefficient Electro-Optic Tuning

Elucidating the Surface Reactions of an Amorphous Si Thin Film as a Model Electrode for Li-Ion Batteries

High-speed CMOS-compatible III-V on Si membrane photodetectors

InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities

Impact of Floating Body Effect, Back-Gate Traps, and Trap-Assisted Tunneling on Scaled In0.53Ga0.47As Ultrathin-Body MOSFETs and Mitigation Measures

Electrochemical Performance of All-Solid-State Li-Ion Batteries Based on Garnet Electrolyte Using Silicon as a Model Electrode

Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(001)

Three-dimensional monolithic integration of III-V and Si(Ge) FETs for hybrid CMOS and beyond

Gallium Phosphide-on-Silicon Dioxide Photonic Devices

A BaTiO3-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform

Low-resistive, CMOS-compatible ohmic contact schemes to moderately doped n-InP

20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon

A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon

High-Frequency Quantum Well InGaAs-on-Si MOSFETs With Scaled Gate Lengths

Highly selective dry etching of GaP in the presence of Al x Ga 1–x P with a SiCl 4 /SF 6 plasma

Optomechanics with one-dimensional gallium phosphide photonic crystal cavities

Highly selective dry etching of GaP in the presence of AlxGa1-xP with a SiCl4/SF6 plasma

Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon

Monolithically Integrated CMOS-Compatible III-V on Silicon Lasers

20-nm In 0.8 Ga 0.2 As MOSHEMT MMIC Technology on Silicon

High-performance InGaAs FinFETs with raised source/drain extensions

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