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Laplace DLTS studies of the 0.25 eV electron trap properties in n-GaN

Semiconductor science and technology, 2021-03, Vol.36 (3), p.35014

2021

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Graded-index separate confinement heterostructure InGaN laser diodes

Applied physics letters, 2013-12, Vol.103 (26)

2013

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A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN

Journal of applied physics, 2012-06, Vol.111 (11), p.113105-113105-7

2012

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Cavity suppression in nitride based superluminescent diodes

Journal of applied physics, 2012-04, Vol.111 (8), p.083106-083106-6

2012

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Optimization of InGaN-GaN MQW Photodetector Structures for High-Responsivity Performance

IEEE journal of quantum electronics, 2009-06, Vol.45 (6), p.617-622

2009

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Universal behavior of photoluminescence in GaN-based quantum wells under hydrostatic pressure governed by built-in electric field

Journal of applied physics, 2012-09, Vol.112 (5)

2012

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Bandgap behavior of InGaN/GaN short period superlattices grown by metal‐organic vapor phase epitaxy

physica status solidi (b), 2017-08, Vol.254 (8), p.n/a

2017

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Influence of GaN substrate off-cut on properties of InGaN and AlGaN layers

Crystal research and technology (1979), 2012-03, Vol.47 (3), p.321-328

2012

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Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

Journal of crystal growth, 2011-03, Vol.318 (1), p.496-499

2011

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Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

Applied physics letters, 2006-05, Vol.88 (20), p.201111-201111-3

2006

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Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes

Applied physics letters, 2007-03, Vol.90 (10)

2007

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Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

Physical review. B, Condensed matter and materials physics, 2010-06, Vol.81 (23), Article 235206

2010

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AlGaInN diode-laser technology for optical clocks and atom interferometry

Journal of physics. Conference series, 2017-02, Vol.810 (1), p.12052

2017

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Lateral grating DFB AlGaInN laser diodes for optical communications and atomic clocks

Journal of physics. Conference series, 2017-02, Vol.810 (1), p.12053

2017

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Effect of efficiency "droop" in violet and blue InGaN laser diodes

Applied physics letters, 2009-08, Vol.95 (7), p.071108-071108-3

2009

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Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates

Journal of applied physics, 2010-07, Vol.108 (2), p.023516-023516-6

2010

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Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates

Applied physics letters, 2007-11, Vol.91 (21), p.211904-211904-3

2007

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Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

Journal of applied physics, 2009-06, Vol.105 (12), p.123713-123713-5

2009

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Nitride-based quantum structures and devices on modified GaN substrates

Physica status solidi. A, Applications and materials science, 2009-06, Vol.206 (6), p.1130-1134

2009

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Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

Applied physics letters, 2008-10, Vol.93 (17), p.172117-172117-3

2008

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InGaN tapered laser diodes

Electronics letters, 2012-09, Vol.48 (19), p.1232-1234

2012

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Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction

Nanotechnology, 2007-11, Vol.18 (46), p.465707-465707 (9)

2007

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Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4889-4891

2009

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Inhomogeneities of InGaN/GaN MOVPE multi quantum wells grown with a two temperatures process studied by transmission electron microscopy

Physica status solidi. A, Applications and materials science, 2010-05, Vol.207 (5), p.1101-1104

2010

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Tilt of InGaN layers on miscut GaN substrates

Physica status solidi. PSS-RRL. Rapid research letters, 2010-07, Vol.4 (7), p.142-144

2010

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Laplace DLTS studies of the 0.25 eV electron trap properties in n-GaN

Graded-index separate confinement heterostructure InGaN laser diodes

A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN

Cavity suppression in nitride based superluminescent diodes

Optimization of InGaN-GaN MQW Photodetector Structures for High-Responsivity Performance

Universal behavior of photoluminescence in GaN-based quantum wells under hydrostatic pressure governed by built-in electric field

Bandgap behavior of InGaN/GaN short period superlattices grown by metal‐organic vapor phase epitaxy

Influence of GaN substrate off-cut on properties of InGaN and AlGaN layers

Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy

Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes

Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

AlGaInN diode-laser technology for optical clocks and atom interferometry

Lateral grating DFB AlGaInN laser diodes for optical communications and atomic clocks

Effect of efficiency "droop" in violet and blue InGaN laser diodes

Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates

Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates

Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

Nitride-based quantum structures and devices on modified GaN substrates

Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

InGaN tapered laser diodes

Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction

Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates

Inhomogeneities of InGaN/GaN MOVPE multi quantum wells grown with a two temperatures process studied by transmission electron microscopy

Tilt of InGaN layers on miscut GaN substrates

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