UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 178

Sortiert nach

Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons

Applied physics letters, 2023-02, Vol.122 (9)

2023

Volltextzugriff (PDF)

Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors

Applied physics letters, 2022-11, Vol.121 (21)

2022

Volltextzugriff (PDF)

Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals

Journal of applied physics, 2024-05, Vol.135 (19)

2024

Volltextzugriff (PDF)

Low frequency noise and trap density in GaN/AlGaN field effect transistors

Applied physics letters, 2019-10, Vol.115 (18)

2019

Volltextzugriff (PDF)

Plasmons in AlGaN/GaN grating-gate structure probing with 300 K background illumination

AIP advances, 2023-09, Vol.13 (9), p.095017-095017-5

2023

Volltextzugriff (PDF)

Low-frequency noise in Au-decorated graphene–Si Schottky barrier diode at selected ambient gases

Applied physics letters, 2023-05, Vol.122 (21)

2023

Volltextzugriff (PDF)

Erratum: “Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures” [Appl. Phys. Lett. 107, 262107 (2016)]

Applied physics letters, 2018-08, Vol.113 (9)

2018

Volltextzugriff (PDF)

Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes

Applied physics letters, 2016-07, Vol.109 (3)

2016

Volltextzugriff (PDF)

Saturation of photoresponse to intense THz radiation in AlGaN/GaN HEMT detector

Journal of applied physics, 2016-10, Vol.120 (16), p.164507

2016

Volltextzugriff (PDF)

Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

Applied physics letters, 2015-12, Vol.107 (26)

2015

Volltextzugriff (PDF)

Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Applied physics letters, 2012-04, Vol.100 (18), p.181603-181603-4

2012

Volltextzugriff (PDF)

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

Applied physics. A, Materials science & processing, 2014-06, Vol.115 (3), p.1015-1023

2014

Volltextzugriff (PDF)

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

Applied physics letters, 2014-01, Vol.104 (2), p.23503

2014

Volltextzugriff (PDF)

Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

Applied physics letters, 2013-07, Vol.103 (5)

2013

Volltextzugriff (PDF)

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Journal of physics. D, Applied physics, 2014-02, Vol.47 (7), p.1-18

2014

Volltextzugriff (PDF)

Broadening of intersubband and interband transitions in InGaN/AlInN multi-quantum wells

Journal of physics. D, Applied physics, 2010-05, Vol.43 (19), p.195101-195101

2010

Volltextzugriff (PDF)

Growth mechanisms in semipolar (202¯1) and nonpolar m-plane (101¯0) AlGaN/GaN structures grown by PAMBE under N-rich conditions

Journal of crystal growth, 2013-08, Vol.377, p.184-191

2013

Volltextzugriff (PDF)

In1-xMnxSb - a narrow-gap ferromagnetic semiconductor

Applied physics letters, 2003-06, Vol.82 (24)

2003

Volltextzugriff (PDF)

Step-flow growth mode instability of N-polar GaN under N-excess

Applied physics letters, 2013-08, Vol.103 (7)

2013

Volltextzugriff (PDF)

Growth mechanism of InGaN by plasma assisted molecular beam epitaxy

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-05, Vol.29 (3)

2011

Volltextzugriff (PDF)

Magnetoconductivity of a Mercury Cadmium Telluride Resonant THz Detector

Acta physica Polonica, A, 2018-10, Vol.134 (4), p.973-977

2018

Volltextzugriff (PDF)

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

Applied physics letters, 2018-03, Vol.112 (13)

2018

Volltextzugriff (PDF)

Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE

Journal of crystal growth, 2007-07, Vol.305 (2), p.346-354

2007

Volltextzugriff (PDF)

Electrical Tuning of Terahertz Plasmonic Crystal Phases

Physical review. X, 2023-10, Vol.13 (4), p.041003, Article 041003

2023

Volltextzugriff (PDF)

Fast measurements of photoreflectance spectra by using multi-channel detector

Physica status solidi. A, Applications and materials science, 2009-05, Vol.206 (5), p.847-850

2009

Volltextzugriff (PDF)

1 – 25 von 178

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(134)
Mit Volltextzugriff
(154)

Publikationsform

Sprache

Englisch
(175)
Japanisch
(23)
Polnisch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(116)
Physics
(107)
Physical Sciences
(106)
Physics, Applied
(63)
Technology
(43)
Physics, Condensed Matter
(38)
Materials Science
(36)
Materials Science, Multidisciplinary
(30)
Physics, Multidisciplinary
(19)
Exact Sciences And Technology
(18)
Aluminum Gallium Nitrides
(16)
Engineering
(15)
Engineering, Electrical & Electronic
(15)
Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
(12)
Gallium Nitrides
(12)
Field Effect Transistors
(11)
Logic Gates
(11)
Applied Physics
(10)
Detectors
(10)
Semiconductor Devices
(10)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons

Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors

Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals

Low frequency noise and trap density in GaN/AlGaN field effect transistors

Plasmons in AlGaN/GaN grating-gate structure probing with 300 K background illumination

Low-frequency noise in Au-decorated graphene–Si Schottky barrier diode at selected ambient gases

Erratum: “Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures” [Appl. Phys. Lett. 107, 262107 (2016)]

Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes

Saturation of photoresponse to intense THz radiation in AlGaN/GaN HEMT detector

Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Broadening of intersubband and interband transitions in InGaN/AlInN multi-quantum wells

Growth mechanisms in semipolar (202¯1) and nonpolar m-plane (101¯0) AlGaN/GaN structures grown by PAMBE under N-rich conditions

In1-xMnxSb - a narrow-gap ferromagnetic semiconductor

Step-flow growth mode instability of N-polar GaN under N-excess

Growth mechanism of InGaN by plasma assisted molecular beam epitaxy

Magnetoconductivity of a Mercury Cadmium Telluride Resonant THz Detector

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE

Electrical Tuning of Terahertz Plasmonic Crystal Phases

Fast measurements of photoreflectance spectra by using multi-channel detector

Suchergebnisse filtern