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Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1450-1455

2013

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Numerical study of a sinusoidal transverse propeller

IOP conference series. Earth and environmental science, 2019-03, Vol.240 (5), p.52007

2019

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Influence of Expectations Created by Label on Consumers Acceptance of Uruguayan Low-Fat Cheeses

Journal of sensory studies, 2012-10, Vol.27 (5), p.344-351

2012

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Uranium Uptake by Montmorillonite-Biomass Complexes

Industrial & engineering chemistry research, 2013-02, Vol.52 (6), p.2273-2279

2013

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Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1491-1495

2013

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Three-terminal junctions operating as mixers, frequency doublers and detectors: a broad-band frequency numerical and experimental study at room temperature

Semiconductor science and technology, 2010-12, Vol.25 (12), p.125013-1-14

2010

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Importance of the Hydration Degree in the Use of Clay–Fungal Biocomposites as Adsorbents for Uranium Uptake

Industrial & engineering chemistry research, 2017-03, Vol.56 (10), p.2824-2833

2017

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Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2184-2187

2012

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Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3216-3222

2013

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Environmental biotechnology and engineering: two convergent areas to provide real solutions for a growing world

Environmental science and pollution research international, 2018-08, Vol.25 (22), p.21267-21271

2018

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Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors

IEEE transactions on microwave theory and techniques, 2008-07, Vol.56 (7), p.1505-1510

2008

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IEEE_Xplore

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

Microelectronics and reliability, 2017-09, Vol.76-77, p.350-356

2017

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AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1725-1730

2006

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Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests

Microelectronics and reliability, 2019-09, Vol.100-101, p.113358, Article 113358

2019

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Electrical Runaway in AlGaN/GaN HEMTs: Physical Mechanisms and Impact on Reliability

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1548-1553

2017

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IEEE_Xplore

Effect of ion doping on CuO magnetism

Journal of applied physics, 2000-05, Vol.87 (9), p.4870-4872

2000

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PDMS-based porous particles as support beds for cell immobilization: Bacterial biofilm formation as a function of porosity and polymer composition

Colloids and surfaces, B, Biointerfaces, 2010-11, Vol.81 (1), p.289-296

2010

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RF doubling and rectification in three-terminal junctions: experimental characterization and Monte Carlo analysis

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012021-1-4

2009

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Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1672-1676

2015

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Low frequency drain noise comparison of AlGaN/GaN HEMT’s grown on silicon, SiC and sapphire substrates

Microelectronics and reliability, 2003-09, Vol.43 (9), p.1713-1718

2003

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Correlation between forward-reverse low-frequency noise and atypical I–V signatures in 980nm high-power laser diodes

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1741-1745

2015

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Correlation between forward-reverse low-frequency noise and atypical I–V signatures in 980 nm high-power laser diodes

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1741-1745

2015

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Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Microelectronics and reliability, 2016-09, Vol.64, p.594-598

2016

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Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

2010 IEEE International Reliability Physics Symposium, 2010, p.139-145

2010

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IEEE_Xplore

Influence of Expectations Created by Label on Consumers Acceptance of U ruguayan Low‐Fat Cheeses

Journal of sensory studies, 2012-10, Vol.27 (5), p.344-351

2012

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Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

Numerical study of a sinusoidal transverse propeller

Influence of Expectations Created by Label on Consumers Acceptance of Uruguayan Low-Fat Cheeses

Uranium Uptake by Montmorillonite-Biomass Complexes

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements

Three-terminal junctions operating as mixers, frequency doublers and detectors: a broad-band frequency numerical and experimental study at room temperature

Importance of the Hydration Degree in the Use of Clay–Fungal Biocomposites as Adsorbents for Uranium Uptake

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test

Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

Environmental biotechnology and engineering: two convergent areas to provide real solutions for a growing world

Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements

Investigation of trap induced power drift on 0.15 μm GaN technology after aging tests

Electrical Runaway in AlGaN/GaN HEMTs: Physical Mechanisms and Impact on Reliability

Effect of ion doping on CuO magnetism

PDMS-based porous particles as support beds for cell immobilization: Bacterial biofilm formation as a function of porosity and polymer composition

RF doubling and rectification in three-terminal junctions: experimental characterization and Monte Carlo analysis

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs

Low frequency drain noise comparison of AlGaN/GaN HEMT’s grown on silicon, SiC and sapphire substrates

Correlation between forward-reverse low-frequency noise and atypical I–V signatures in 980nm high-power laser diodes

Correlation between forward-reverse low-frequency noise and atypical I–V signatures in 980 nm high-power laser diodes

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

Influence of Expectations Created by Label on Consumers Acceptance of U ruguayan Low‐Fat Cheeses

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