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Adaptive LDMOSFET Drain and Dummy-Gate Biases for Highly Modulated Signals

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3555-3561

2008

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Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETs

IEEE transactions on microwave theory and techniques, 2008-12, Vol.56 (12), p.2709-2716

2008

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Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETs

IEEE transactions on microwave theory and techniques, 2008-12, Vol.56 (12), p.2709

2008

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Modeling and Characterization of Effects of Dummy-Gate Bias on LDMOSFETs

IEEE transactions on electron devices, 2007-03, Vol.54 (3), p.580-588

2007

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A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.2, p.419-422 vol.2

1999

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A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers

IEEE transactions on microwave theory and techniques, 1985-12, Vol.33 (12), p.1383-1394

1985

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The performance of submicrometer gate length GaAs MESFET's

IEEE transactions on electron devices, 1983-12, Vol.30 (12), p.1693-1699

Curtice, W.R.

1983

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A MESFET Model for Use in the Design of GaAs Integrated Circuits

IEEE transactions on microwave theory and techniques, 1980-05, Vol.28 (5), p.448-456

Curtice, W.R.

1980

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GaAs MESFET modeling and nonlinear CAD

IEEE transactions on microwave theory and techniques, 1988-02, Vol.36 (2), p.220-230

Curtice, W.R.

1988

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Charge-enhancement mechanisms of GaAs field-effect transistors: Experiment and simulation

IEEE transactions on nuclear science, 1998-06, Vol.45 (3), p.1494-1500

1998

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Comparison of hybrid pi and Tee HBT circuit topologies and their relationship to large signal modeling

1997 IEEE MTT-S International Microwave Symposium Digest, 1997, Vol.2, p.375-378 vol.2

1997

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Single event induced charge transport modeling of GaAs MESFETs

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1993-12, Vol.40 (6), p.1867-1871

1993

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Effects of bias and load conditions on dynamic self-heating of bipolar transistors

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), 2004, Vol.1, p.47-50 Vol.1

2004

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Charge-collection characteristics of GaAs MESFETs fabricated with a low-temperature grown GaAs buffer layer: computer simulation

IEEE transactions on nuclear science, 1996-12, Vol.43 (6), p.2904-2912

1996

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The thermal gain effect in GaAs-based HBT's

IEEE MTT-S International Microwave Symposium Digest, 2003, 2003, Vol.2, p.639-641 vol.2

2003

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Charge-collection mechanisms of AlGaAs/GaAs HBTs

IEEE transactions on nuclear science, 1997-12, Vol.44 (6), p.2274-2281

1997

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Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer

IEEE transactions on nuclear science, 1995-12, Vol.42 (6), p.1837-1843

1995

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Nonlinear Analysis of GaAs MESFET Amplifiers, Mixers, and Distributed Amplifiers Using the Harmonic Balance Technique

IEEE transactions on microwave theory and techniques, 1987-04, Vol.35 (4), p.441-447

Curtice, W.R.

1987

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Intrinsic GaAs MESFET equivalent circuit models generated from two-dimensional simulations

IEEE transactions on computer-aided design of integrated circuits and systems, 1989-04, Vol.8 (4), p.395-402

Curtice, W.R.

1989

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Nonlinear FET modeling-a mixture of art and science

1991 IEEE MTT-S International Microwave Symposium Digest, 1991, p.17 vol.1

Curtice, W.R.

1991

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Effects of Dummy Gate on Breakdown and Degradation of LDMOSFETs

IEEE transactions on device and materials reliability, 2008-03, Vol.8 (1), p.193-202

2008

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Picosecond charge-collection dynamics in GaAs MESFETs (for space application)

IEEE transactions on nuclear science, 1992-12, Vol.39 (6), p.1657-1664

1992

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Self-Consistent GaAs FET Models for Amplifier Design and Device Diagnostics

IEEE transactions on microwave theory and techniques, 1984-12, Vol.32 (12), p.1573-1578

1984

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Direct comparison of the electron-temperature model with the particle-mesh (Monte-Carlo) model for the GaAs MESFET

IEEE transactions on electron devices, 1982-12, Vol.29 (12), p.1942-1943

Curtice, W.R.

1982

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Modeling of current lag in GaAs IC's

1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192), 1998, Vol.2, p.603-606 vol.2

1998

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Adaptive LDMOSFET Drain and Dummy-Gate Biases for Highly Modulated Signals

Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETs

Temperature-Dependent RF Large-Signal Model of GaN-Based MOSHFETs

Modeling and Characterization of Effects of Dummy-Gate Bias on LDMOSFETs

A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs

A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers

The performance of submicrometer gate length GaAs MESFET's

A MESFET Model for Use in the Design of GaAs Integrated Circuits

GaAs MESFET modeling and nonlinear CAD

Charge-enhancement mechanisms of GaAs field-effect transistors: Experiment and simulation

Comparison of hybrid pi and Tee HBT circuit topologies and their relationship to large signal modeling

Single event induced charge transport modeling of GaAs MESFETs

Effects of bias and load conditions on dynamic self-heating of bipolar transistors

Charge-collection characteristics of GaAs MESFETs fabricated with a low-temperature grown GaAs buffer layer: computer simulation

The thermal gain effect in GaAs-based HBT's

Charge-collection mechanisms of AlGaAs/GaAs HBTs

Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer

Nonlinear Analysis of GaAs MESFET Amplifiers, Mixers, and Distributed Amplifiers Using the Harmonic Balance Technique

Intrinsic GaAs MESFET equivalent circuit models generated from two-dimensional simulations

Nonlinear FET modeling-a mixture of art and science

Effects of Dummy Gate on Breakdown and Degradation of LDMOSFETs

Picosecond charge-collection dynamics in GaAs MESFETs (for space application)

Self-Consistent GaAs FET Models for Amplifier Design and Device Diagnostics

Direct comparison of the electron-temperature model with the particle-mesh (Monte-Carlo) model for the GaAs MESFET

Modeling of current lag in GaAs IC's

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