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Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

ACS nano, 2020-03, Vol.14 (3), p.3316-3327

2020

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EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning

Nature communications, 2024-01, Vol.15 (1), p.694-694, Article 694

2024

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Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

Advanced science, 2023-09, Vol.10 (27), p.e2302101-e2302101

2023

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Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon

Advanced electronic materials, 2023-05, Vol.9 (5), p.n/a

2023

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Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy

Nano letters, 2004-10, Vol.4 (10), p.1969-1973

2004

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Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy

Applied physics letters, 2013-01, Vol.102 (1)

2013

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Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication

Advanced materials (Weinheim), 2024-06, Vol.36 (24), p.e2312282-n/a

2024

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In operando charge transport imaging of atomically thin dopant nanostructures in silicon

Nanoscale, 2022-05, Vol.14 (17), p.6437-6448

2022

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Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface

Angewandte Chemie International Edition, 2023-02, Vol.62 (7), p.e202213982-n/a

International ed. in English, 2023

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Substitutional Tin Acceptor States in Black Phosphorus

Journal of physical chemistry. C, 2021-10, Vol.125 (41), p.22883-22889

2021

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Topological phases of a dimerized Fermi–Hubbard model for semiconductor nano-lattices

npj quantum information, 2020-02, Vol.6 (1), Article 24

2020

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Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001)

Journal of physical chemistry. C, 2023-08, Vol.127 (33), p.16433-16441

2023

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Nondestructive imaging of atomically thin nanostructures buried in silicon

Science advances, 2017-06, Vol.3 (6), p.e1602586

2017

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Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy

Journal of physics. Condensed matter, 2014-01, Vol.26 (1), p.012001-012001

2014

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Channels of oxygen diffusion in single crystal rubrene revealed

Physical chemistry chemical physics : PCCP, 2016-01, Vol.18 (47), p.32302-32307

2016

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Benchmarking of X-Ray Fluorescence Microscopy with Ion Beam Implanted Samples Showing Detection Sensitivity of Hundreds of Atoms

Small methods, 2024-05, p.e2301610-e2301610

2024

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Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface

Angewandte Chemie, 2023-02, Vol.135 (7), p.n/a

2023

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Resistless EUV lithography: Photon-induced oxide patterning on silicon

Science advances, 2023-04, Vol.9 (16), p.eadf5997-eadf5997

2023

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Site-Dependent Ambipolar Charge States Induced by Group V Atoms in a Silicon Surface

ACS nano, 2012-12, Vol.6 (12), p.10456-10462

2012

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Revealing surface oxidation on the organic semi-conducting single crystal rubrene with time of flight secondary ion mass spectroscopy

Physical chemistry chemical physics : PCCP, 2013-04, Vol.15 (14), p.522-527

2013

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Two- to three-dimensional crossover in a dense electron liquid in silicon

Physical review. B, 2018-04, Vol.97 (15), Article 155306

2018

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Spatially Resolved Dielectric Loss at the Si/SiO_{2} Interface

Physical review letters, 2024-06, Vol.132 (25), p.256202

2024

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charge transport imaging of atomically thin dopant nanostructures in silicon

Nanoscale, 2022-05, Vol.14 (17), p.6437-6448

2022

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Phosphine Dissociation and Diffusion on Si(001) Observed at the Atomic Scale

The journal of physical chemistry. B, 2006-02, Vol.110 (7), p.3173-3179

2006

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Bismuth trichloride as a molecular precursor for silicon doping

Applied physics letters, 2023-04, Vol.122 (15)

2023

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Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon

Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy

Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy

Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication

In operando charge transport imaging of atomically thin dopant nanostructures in silicon

Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface

Substitutional Tin Acceptor States in Black Phosphorus

Topological phases of a dimerized Fermi–Hubbard model for semiconductor nano-lattices

Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001)

Nondestructive imaging of atomically thin nanostructures buried in silicon

Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy

Channels of oxygen diffusion in single crystal rubrene revealed

Benchmarking of X-Ray Fluorescence Microscopy with Ion Beam Implanted Samples Showing Detection Sensitivity of Hundreds of Atoms

Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface

Resistless EUV lithography: Photon-induced oxide patterning on silicon

Site-Dependent Ambipolar Charge States Induced by Group V Atoms in a Silicon Surface

Revealing surface oxidation on the organic semi-conducting single crystal rubrene with time of flight secondary ion mass spectroscopy

Two- to three-dimensional crossover in a dense electron liquid in silicon

Spatially Resolved Dielectric Loss at the Si/SiO_{2} Interface

charge transport imaging of atomically thin dopant nanostructures in silicon

Phosphine Dissociation and Diffusion on Si(001) Observed at the Atomic Scale

Bismuth trichloride as a molecular precursor for silicon doping

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