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Ion beams in silicon processing and characterization

Journal of applied physics, 1997-05, Vol.81 (10), p.6513-6561

1997

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Accurate electrical activation characterization of CMOS ultra-shallow profiles

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114, p.166-173

2004

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Noncontact sheet resistance and leakage current mapping for ultra-shallow junctions

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.414-420

2006

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Plasma immersion ion implantation of SiF4 and BF3 for sub-100 nm P +/ N junction fabrication

Applied physics letters, 1991-07, Vol.59 (3), p.348-350

1991

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Beam Angular Divergence Effects in Ion Implantation

AIP conference proceedings, 2008, Vol.1066 (1), p.403-406

2008

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Micro-Probe CV and IV Characterization of Thin Dielectric Films on Product-Wafer Scribe-Line Structures

Frontiers of Characterization and Metrology for Nanoelectronics: 2007 (AIP Conference Proceedings Volume 931), 2007, Vol.931, p.255-260

2007

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Non-contact sheet resistance and leakage current monitoring of multi-implant, ultra-shallow junctions: Doping and damage effects for ms-anneals

Ion Implantation Technology, 2006, Vol.866, p.582-585

2006

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Leakage Current and Dopant Activation Characterization of SDE/Halo CMOS Junctions with Non-Contact Junction Photo-Voltage Metrology

Frontiers of Characterization and Metrology for Nanoelectronics: 2007 (AIP Conference Proceedings Volume 931), 2007, Vol.931, p.246-250

2007

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Characterization of ultrashallow junctions using frequency-dependent junction photovoltage and its lateral attenuation

Applied physics letters, 2006-10, Vol.89 (15), p.151123-151123-3

2006

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Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave Annealing

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2088-2093

2011

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Ultra-shallow junction technology for 100 nm CMOS: xR LEAP implanter and RTP-centura rapid thermal annealer

Materials chemistry and physics, 1998-07, Vol.54 (1), p.33-36

1998

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Full low temperature microwave processed Ge CMOS achieving diffusion-less junction and Ultrathin 7.5nm Ni mono-germanide

2012 International Electron Devices Meeting, 2012, p.23.3.1-23.3.4

2012

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Irradiation effects of gas-cluster CO2 ion beams on Si

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993-04, Vol.74 (1-2), p.341-346

1993

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Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants

MRS proceedings, 1999, Vol.568, Article 55

1999

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Surface roughness and device layer thickness for ultra-thin SOI

2002 IEEE International SOI Conference, 2002, p.111-112

2002

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Plasma model for charging damage

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-03, Vol.96 (1), p.48-51

1995

Volltextzugriff (PDF)

Mass and charge overlaps in beamline implantation into compound semiconductor materials

AIP conference proceedings, 2012, Vol.1496 (1)

2012

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The precision implant 9500 plasma flood system — the advanced solution to wafer charging

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-03, Vol.96 (1), p.30-33

1995

Volltextzugriff (PDF)

Defect engineering of p +-junctions by multiple-species ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993-04, Vol.74 (1), p.175-180

1993

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Conformal implantation for trench doping with plasma immersion ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-04, Vol.55 (1), p.898-901

1991

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Control of surface charging during high current ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1989-02, Vol.37, p.555-558

1989

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Near and SUB-keV Boron Implantation and Rapid Thermal Annealing: a Sims and Tem Study

MRS proceedings, 1997, Vol.470, Article 325

1997

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Novel Paths for Nucleatton and Growth of Thin Films by Ionized Cluster Beam (ICB) Techniques: Atomic-Scale Observations

MRS proceedings, 1991, Vol.235, Article 597

1991

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Plasma immersion Pd ion implantation seeding pattern formation for selective electroless Cu plating

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-04, Vol.55 (1), p.888-892

1991

Volltextzugriff (PDF)

A plasma immersion ion implantation reactor for ULSI fabrication

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-04, Vol.55 (1), p.884-887

1991

Volltextzugriff (PDF)

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Ion beams in silicon processing and characterization

Accurate electrical activation characterization of CMOS ultra-shallow profiles

Noncontact sheet resistance and leakage current mapping for ultra-shallow junctions

Plasma immersion ion implantation of SiF4 and BF3 for sub-100 nm P +/ N junction fabrication

Beam Angular Divergence Effects in Ion Implantation

Micro-Probe CV and IV Characterization of Thin Dielectric Films on Product-Wafer Scribe-Line Structures

Non-contact sheet resistance and leakage current monitoring of multi-implant, ultra-shallow junctions: Doping and damage effects for ms-anneals

Leakage Current and Dopant Activation Characterization of SDE/Halo CMOS Junctions with Non-Contact Junction Photo-Voltage Metrology

Characterization of ultrashallow junctions using frequency-dependent junction photovoltage and its lateral attenuation

Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave Annealing

Ultra-shallow junction technology for 100 nm CMOS: xR LEAP implanter and RTP-centura rapid thermal annealer

Full low temperature microwave processed Ge CMOS achieving diffusion-less junction and Ultrathin 7.5nm Ni mono-germanide

Irradiation effects of gas-cluster CO2 ion beams on Si

Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants

Surface roughness and device layer thickness for ultra-thin SOI

Plasma model for charging damage

Mass and charge overlaps in beamline implantation into compound semiconductor materials

The precision implant 9500 plasma flood system — the advanced solution to wafer charging

Defect engineering of p +-junctions by multiple-species ion implantation

Conformal implantation for trench doping with plasma immersion ion implantation

Control of surface charging during high current ion implantation

Near and SUB-keV Boron Implantation and Rapid Thermal Annealing: a Sims and Tem Study

Novel Paths for Nucleatton and Growth of Thin Films by Ionized Cluster Beam (ICB) Techniques: Atomic-Scale Observations

Plasma immersion Pd ion implantation seeding pattern formation for selective electroless Cu plating

A plasma immersion ion implantation reactor for ULSI fabrication

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