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The structural and luminescence properties of porous silicon

Journal of applied physics, 1997-08, Vol.82 (3), p.909-965

1997

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MOCVD growth mechanisms of ZnO nanorods

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012034

2010

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Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs

Physical review letters, 2001-03, Vol.86 (11), p.2381-2384

2001

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Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012017

2010

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Simulation supported analysis of the effect of SiNx interlayers in AlGaN on the dislocation density reduction

Journal of physics. Conference series, 2010, Vol.209 (1), p.012018

2010

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Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012002

2010

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Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots

Physical review letters, 2000-01, Vol.84 (4), p.733-736

2000

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Improved accuracy in nano beam electron diffraction

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012063

2010

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Structure and luminescence of sol-gel synthesized anatase nanoparticles

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012039

2010

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Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer

Applied physics letters, 2005-10, Vol.87 (15)

2005

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Atomic resolution imaging of in situ InAs nanowire dissolution at elevated temperature

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012013

2010

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Electron tomography of gate-all-around nanowire transistors

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012046

2010

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Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012064

2010

Volltextzugriff (PDF)

GaN devices based on nanorods

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012001

2010

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Visible light emission due to quantum size effects in highly porous crystalline silicon

Nature (London), 1991-09, Vol.353 (6342), p.335-338

1991

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Characterization of core-shell GaAs/AlGaAs nanowire heterostructures using advanced electron microscopy

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012033

2010

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Comparison of experimental and theoretical X-ray intensities from (In)GaAs specimens investigated by energy-dispersive X-ray spectroscopy in a transmission electron microscope

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012029

Walther, T

2010

Volltextzugriff (PDF)

Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012014

2010

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InAs/GaAs(001) molecular beam epitaxial growth in a scanning tunnelling microscope

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012048

2010

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Study of annealed InAs/GaAs quantum dot structures

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012036

2010

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Temperature dependence of Ga-assisted oxide desorption on GaAs(001)

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012066

2010

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TEM characterization of catalyst- and mask-free grown GaN nanorods

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012020

2010

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Structural and compositional study of Erbium-doped silicon nanocrystals by HAADF, EELS and HRTEM techniques in an aberration corrected STEM

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012043

2010

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Reliability study on green InGaN/GaN light emitting diodes

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012065

2010

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High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

IEEE transactions on electron devices, 2003-09, Vol.50 (9), p.1961-1969

2003

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The structural and luminescence properties of porous silicon

MOCVD growth mechanisms of ZnO nanorods

Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs

Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers

Simulation supported analysis of the effect of SiNx interlayers in AlGaN on the dislocation density reduction

Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors

Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots

Improved accuracy in nano beam electron diffraction

Structure and luminescence of sol-gel synthesized anatase nanoparticles

Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer

Atomic resolution imaging of in situ InAs nanowire dissolution at elevated temperature

Electron tomography of gate-all-around nanowire transistors

Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography

GaN devices based on nanorods

Visible light emission due to quantum size effects in highly porous crystalline silicon

Characterization of core-shell GaAs/AlGaAs nanowire heterostructures using advanced electron microscopy

Comparison of experimental and theoretical X-ray intensities from (In)GaAs specimens investigated by energy-dispersive X-ray spectroscopy in a transmission electron microscope

Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS

InAs/GaAs(001) molecular beam epitaxial growth in a scanning tunnelling microscope

Study of annealed InAs/GaAs quantum dot structures

Temperature dependence of Ga-assisted oxide desorption on GaAs(001)

TEM characterization of catalyst- and mask-free grown GaN nanorods

Structural and compositional study of Erbium-doped silicon nanocrystals by HAADF, EELS and HRTEM techniques in an aberration corrected STEM

Reliability study on green InGaN/GaN light emitting diodes

High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

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