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Transmission microscopy without lenses for objects of unlimited size

Ultramicroscopy, 2007-02, Vol.107 (2), p.227-231

2007

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Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM

Journal of crystal growth, 2012-02, Vol.341 (1), p.19-23

2012

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High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

IEEE transactions on electron devices, 2003-09, Vol.50 (9), p.1961-1969

2003

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InAs/GaAs(0 0 1) wetting layer formation observed in situ by concurrent MBE and STM

Surface science, 2009-12, Vol.603 (24), p.3439-3444

2009

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A study of dislocations in AlN and GaN films grown on sapphire substrates

Journal of crystal growth, 2005-09, Vol.282 (3), p.290-296

2005

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Ultra-sensitive polysilicon wire glucose sensor using a 3-aminopropyltriethoxysilane and polydimethylsiloxane-treated hydrophobic fumed silica nanoparticle mixture as the sensing membrane

Sensors and actuators. B, Chemical, 2009-10, Vol.142 (1), p.273-279

2009

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Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs

IEEE transactions on electron devices, 2004-08, Vol.51 (8), p.1245-1253

2004

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Fabrication of carbon nanotubes by electrical breakdown of carbon-coated Au nanowires

Materials letters, 2010-07, Vol.64 (14), p.1583-1586

2010

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Strain-Induced Modulations in the Surface Morphology of Heteroepitaxial Layers

MRS bulletin, 1996-04, Vol.21 (4), p.21-26

Cullis, A.G.

1996

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Evolution of surface morphology and strain during SiGe epitaxy

Thin solid films, 1992-12, Vol.222 (1), p.78-84

1992

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The structural and luminescence properties of porous silicon

Journal of applied physics, 1997-08, Vol.82 (3), p.909-965

1997

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The characteristics of strain-modulated surface undulations formed upon epitaxial Si1-xGex alloy layers on Si

Journal of crystal growth, 1992-10, Vol.123 (3-4), p.333-343

1992

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Investigation of intermixing in TiAlN/VN nanoscale multilayer coatings by energy-filtered TEM

Surface & coatings technology, 2002-03, Vol.151, p.209-213

2002

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Lattice resolved annular dark-field scanning transmission electron microscopy of (Al, In)GaN/GaN layers for measuring segregation with sub-monolayer precision

Journal of materials science, 2013-04, Vol.48 (7), p.2883-2892

2013

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Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs

Solid-state electronics, 2003-08, Vol.47 (8), p.1289-1295

2003

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Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED

Applied surface science, 2002-03, Vol.188 (1), p.214-218

2002

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GaAs(0 0 1) planarization after conventional oxide removal utilising self-governed InAs QD site selection

Applied surface science, 2010-04, Vol.256 (13), p.4269-4271

2010

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Low temperature electrical characterisation of tungsten nano-wires fabricated by electron and ion beam induced chemical vapour deposition

Thin solid films, 2007-06, Vol.515 (17), p.6791-6797

2007

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Computer simulation of atomic displacements in Si, GaAs, and AlAs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-08, Vol.102 (1), p.232-235

1995

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GaAs(0 0 1) (2 × 4) to c(4 × 4) transformation observed in situ by STM during As flux irradiation

Surface science, 2009-08, Vol.603 (16), p.2398-2402

2009

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Molecular dynamics simulation of (100)InGaAs/GaAs strained-layer relaxation processes

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.176-179

1995

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As-rich reconstruction stability observed by high temperature scanning tunnelling microscopy

Journal of crystal growth, 2009-10, Vol.311 (20), p.4478-4482

2009

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The preparation of transmission electron microscope specimens from compound semiconductors by ion milling

Ultramicroscopy, 1987, Vol.23 (2), p.175-198

1987

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Ga assisted oxide desorption on GaAs(0 0 1) studied by scanning tunnelling microscopy

Journal of crystal growth, 2010-05, Vol.312 (10), p.1687-1692

2010

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Generation of misfit dislocations in highly mismatched GaN/AlN layers

Surface science, 2008-08, Vol.602 (15), p.2643-2646

2008

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Transmission microscopy without lenses for objects of unlimited size

Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM

High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

InAs/GaAs(0 0 1) wetting layer formation observed in situ by concurrent MBE and STM

A study of dislocations in AlN and GaN films grown on sapphire substrates

Ultra-sensitive polysilicon wire glucose sensor using a 3-aminopropyltriethoxysilane and polydimethylsiloxane-treated hydrophobic fumed silica nanoparticle mixture as the sensing membrane

Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs

Fabrication of carbon nanotubes by electrical breakdown of carbon-coated Au nanowires

Strain-Induced Modulations in the Surface Morphology of Heteroepitaxial Layers

Evolution of surface morphology and strain during SiGe epitaxy

The structural and luminescence properties of porous silicon

The characteristics of strain-modulated surface undulations formed upon epitaxial Si1-xGex alloy layers on Si

Investigation of intermixing in TiAlN/VN nanoscale multilayer coatings by energy-filtered TEM

Lattice resolved annular dark-field scanning transmission electron microscopy of (Al, In)GaN/GaN layers for measuring segregation with sub-monolayer precision

Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs

Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED

GaAs(0 0 1) planarization after conventional oxide removal utilising self-governed InAs QD site selection

Low temperature electrical characterisation of tungsten nano-wires fabricated by electron and ion beam induced chemical vapour deposition

Computer simulation of atomic displacements in Si, GaAs, and AlAs

GaAs(0 0 1) (2 × 4) to c(4 × 4) transformation observed in situ by STM during As flux irradiation

Molecular dynamics simulation of (100)InGaAs/GaAs strained-layer relaxation processes

As-rich reconstruction stability observed by high temperature scanning tunnelling microscopy

The preparation of transmission electron microscope specimens from compound semiconductors by ion milling

Ga assisted oxide desorption on GaAs(0 0 1) studied by scanning tunnelling microscopy

Generation of misfit dislocations in highly mismatched GaN/AlN layers

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