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Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs

Physical review letters, 2001-03, Vol.86 (11), p.2381-2384

2001

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The structural and luminescence properties of porous silicon

Journal of applied physics, 1997-08, Vol.82 (3), p.909-965

1997

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Visible light emission due to quantum size effects in highly porous crystalline silicon

Nature (London), 1991-09, Vol.353 (6342), p.335-338

1991

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InAs/GaAs(0 0 1) wetting layer formation observed in situ by concurrent MBE and STM

Surface science, 2009-12, Vol.603 (24), p.3439-3444

2009

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A study of dislocations in AlN and GaN films grown on sapphire substrates

Journal of crystal growth, 2005-09, Vol.282 (3), p.290-296

2005

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Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots

Physical review letters, 2000-01, Vol.84 (4), p.733-736

2000

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Hard-x-ray lensless imaging of extended objects

Physical review letters, 2007-01, Vol.98 (3), p.034801-034801

2007

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GaAs(0 0 1) (2 × 4) to c(4 × 4) transformation observed in situ by STM during As flux irradiation

Surface science, 2009-08, Vol.603 (16), p.2398-2402

2009

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Fabrication of a novel SEM microgripper by electrochemical and FIB techniques

Journal of micromechanics and microengineering, 2010-01, Vol.20 (1), p.015028-015028 (5)

2010

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Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer

Applied physics letters, 2005-10, Vol.87 (15)

2005

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As-rich reconstruction stability observed by high temperature scanning tunnelling microscopy

Journal of crystal growth, 2009-10, Vol.311 (20), p.4478-4482

2009

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Transmission microscopy without lenses for objects of unlimited size

Ultramicroscopy, 2007-02, Vol.107 (2), p.227-231

2007

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Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies

Applied physics letters, 2002-08, Vol.81 (9), p.1543-1545

2002

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Ga assisted oxide desorption on GaAs(0 0 1) studied by scanning tunnelling microscopy

Journal of crystal growth, 2010-05, Vol.312 (10), p.1687-1692

2010

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V-shaped pits formed at the GaN/AlN interface

Journal of crystal growth, 2006-03, Vol.289 (1), p.63-67

2006

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Generation of misfit dislocations in highly mismatched GaN/AlN layers

Surface science, 2008-08, Vol.602 (15), p.2643-2646

2008

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Effect of anneal temperature on GaN nucleation layer transformation

Journal of crystal growth, 2003-10, Vol.258 (1), p.89-99

2003

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Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells

Applied physics letters, 2003-09, Vol.83 (10), p.1965-1967

2003

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Spontaneous Emission Control in Micropillar Cavities Containing a Fluorescent Molecular Dye

Advanced materials (Weinheim), 2006-03, Vol.18 (6), p.742-747

2006

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Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters

Applied physics letters, 2003-11, Vol.83 (20), p.4092-4094

2003

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In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures

Semiconductor science and technology, 2003-04, Vol.18 (4), p.212-218

2003

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Transmission Properties of Plasmonic Metamaterial Quantum Cascade Lasers

IEEE photonics technology letters, 2010-08, Vol.22 (16), p.1217-1219

2010

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Lattice resolved annular dark-field scanning transmission electron microscopy of (Al, In)GaN/GaN layers for measuring segregation with sub-monolayer precision

Journal of materials science, 2013-04, Vol.48 (7), p.2883-2892

2013

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Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices

Applied physics letters, 2003-03, Vol.82 (13), p.2172-2174

2003

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Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs

IEEE transactions on electron devices, 2004-08, Vol.51 (8), p.1245-1253

2004

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IEEE_Xplore

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Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs

The structural and luminescence properties of porous silicon

Visible light emission due to quantum size effects in highly porous crystalline silicon

InAs/GaAs(0 0 1) wetting layer formation observed in situ by concurrent MBE and STM

A study of dislocations in AlN and GaN films grown on sapphire substrates

Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots

Hard-x-ray lensless imaging of extended objects

GaAs(0 0 1) (2 × 4) to c(4 × 4) transformation observed in situ by STM during As flux irradiation

Fabrication of a novel SEM microgripper by electrochemical and FIB techniques

Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer

As-rich reconstruction stability observed by high temperature scanning tunnelling microscopy

Transmission microscopy without lenses for objects of unlimited size

Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies

Ga assisted oxide desorption on GaAs(0 0 1) studied by scanning tunnelling microscopy

V-shaped pits formed at the GaN/AlN interface

Generation of misfit dislocations in highly mismatched GaN/AlN layers

Effect of anneal temperature on GaN nucleation layer transformation

Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells

Spontaneous Emission Control in Micropillar Cavities Containing a Fluorescent Molecular Dye

Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters

In situ optical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures

Transmission Properties of Plasmonic Metamaterial Quantum Cascade Lasers

Lattice resolved annular dark-field scanning transmission electron microscopy of (Al, In)GaN/GaN layers for measuring segregation with sub-monolayer precision

Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices

Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs

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