UB Paderborn / Katalog / Suche / in CDI

Growth and structure of epitaxial CeO2 films on yttria-stabilized ZrO2

Thin solid films, 2008-06, Vol.516 (15), p.4908-4914

2008

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IBMM of OH adsorbates and interphases on Si-based materials

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-02, Vol.272, p.330-333

2012

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Growth and structure of epitaxial CeO 2 films on yttria-stabilized ZrO 2

Thin solid films, 2008, Vol.516 (15), p.4908-4914

2008

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Performance evaluation of ion-implanted cutting tools and dies

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-05, Vol.56, p.652-655

1991

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Editorial

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-09, Vol.118 (1-4), p.vii

Culbertson, R.J.

1996

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The formation of ordered, ultrathin SiO2/Si(100) interfaces grown on (1 × 1) Si(100)

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-12, Vol.87 (3), p.303-316

2001

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The formation of ordered, ultrathin SiO 2/Si(1 0 0) interfaces grown on (1×1) Si(1 0 0)

Materials science & engineering. B, Solid-state materials for advanced technology, 2001, Vol.87 (3), p.303-316

2001

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Comparison between predicted strain values using elastic theory and experimental strain values for SiGeC alloy films grown on Si(001)

Materials chemistry and physics, 1996-11, Vol.46 (2), p.277-282

1996

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An X-ray diffraction study of the strain and structure of SiGeC/(100)Si alloys

Materials chemistry and physics, 1996-11, Vol.46 (2), p.283-287

1996

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Long Range Order in Ultra-Thin SiO 2 Grown on Ordered Si(100)

MRS proceedings, 1999, Vol.567, Article 181

1999

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X-Ray Diffraction Analysis of the Strain of SiGeC/(100)Si Alloys

MRS proceedings, 1995, Vol.399, Article 461

1995

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Subsurface strain in the Ge(001) and Ge(111) surfaces and comparison to silicon

Surface science, 1986-03, Vol.167 (1), p.127-140

1986

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Trapping of Interstitials During Ion Implantation In Silicon

MRS proceedings, 1985, Vol.51, Article 357

1985

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Long Range Order in Ultra-Thin SiO2 Grown on Ordered Si(100)

MRS proceedings, 1999, Vol.567

1999

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Ion implantation for corrosion inhibition of aluminum alloys in saline media

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-07, Vol.59, p.845-850

1991

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Formation of stable dopant interstitials during ion implantation of silicon

Journal of materials research, 1986-06, Vol.1 (3), p.476-492

1986

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Structure and properties of silicon nitride and [formula omitted] nitride prepared by direct low energy ion beam nitridation

Materials science & engineering. B, Solid-state materials for advanced technology, 1992, Vol.12 (1), p.53-59

1992

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Magnetic and structural investigation of heat treated ion beam sputtered amorphous Co/sub 74/Fe/sub 6/B/sub 15/Si/sub 5/ films

IEEE transactions on magnetics, 1990-09, Vol.26 (5), p.1459-1461

1990

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IEEE_Xplore

Ion Implantation Monitoring of GaAs Using Thermal Waves

MRS proceedings, 1993, Vol.316, Article 673

1993

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Ion scattering study of reconstruction in the Au(110)-(1×2) surface

Surface science, 1985-10, Vol.161 (2), p.584-596

1985

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Reduced hydrogen embrittlement susceptibility in platinum implanted high strength steel

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1991-07, Vol.59, p.871-874

1991

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Ion Channeling Measurements on Germanium Implanted and Annealed Silicon

MRS proceedings, 1989, Vol.157, Article 721

1989

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Investigation of Chromium Nitridation Using Ion Beam Resonance Analysis

MRS proceedings, 1994, Vol.337, Article 619

1994

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Radiation damage and the capture of Si interstitials by dopant atoms during implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1986-03, Vol.13 (1), p.490-494

1986

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Angular symmetry of the ion scattering surface yield for large outerlayer relaxations

Surface science, 1985-07, Vol.157 (2), p.451-458

1985

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Growth and structure of epitaxial CeO2 films on yttria-stabilized ZrO2

IBMM of OH adsorbates and interphases on Si-based materials

Growth and structure of epitaxial CeO 2 films on yttria-stabilized ZrO 2

Performance evaluation of ion-implanted cutting tools and dies

Editorial

The formation of ordered, ultrathin SiO2/Si(100) interfaces grown on (1 × 1) Si(100)

The formation of ordered, ultrathin SiO 2/Si(1 0 0) interfaces grown on (1×1) Si(1 0 0)

Comparison between predicted strain values using elastic theory and experimental strain values for SiGeC alloy films grown on Si(001)

An X-ray diffraction study of the strain and structure of SiGeC/(100)Si alloys

Long Range Order in Ultra-Thin SiO 2 Grown on Ordered Si(100)

X-Ray Diffraction Analysis of the Strain of SiGeC/(100)Si Alloys

Subsurface strain in the Ge(001) and Ge(111) surfaces and comparison to silicon

Trapping of Interstitials During Ion Implantation In Silicon

Long Range Order in Ultra-Thin SiO2 Grown on Ordered Si(100)

Ion implantation for corrosion inhibition of aluminum alloys in saline media

Formation of stable dopant interstitials during ion implantation of silicon

Structure and properties of silicon nitride and [formula omitted] nitride prepared by direct low energy ion beam nitridation

Magnetic and structural investigation of heat treated ion beam sputtered amorphous Co/sub 74/Fe/sub 6/B/sub 15/Si/sub 5/ films

Ion Implantation Monitoring of GaAs Using Thermal Waves

Ion scattering study of reconstruction in the Au(110)-(1×2) surface

Reduced hydrogen embrittlement susceptibility in platinum implanted high strength steel

Ion Channeling Measurements on Germanium Implanted and Annealed Silicon

Investigation of Chromium Nitridation Using Ion Beam Resonance Analysis

Radiation damage and the capture of Si interstitials by dopant atoms during implantation

Angular symmetry of the ion scattering surface yield for large outerlayer relaxations

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