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Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs

Radiation effects and defects in solids, 2022-04, Vol.177 (3-4), p.372-382

2022

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The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs

Radiation effects and defects in solids, 2020-05, Vol.175 (5-6), p.551-558

2020

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Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress

Chinese physics letters, 2014-12, Vol.31 (12), p.126101-1-126101-3

2014

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Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese physics letters, 2016-07, Vol.33 (7), p.117-119

2016

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Relationship between Brachial-ankle Pulse Wave Velocity and Cardiovascular Risk Factors: A Multi-ethnic Study

Internal Medicine, 2012, Vol.51(6), pp.537-543

2012

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Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

Chinese physics B, 2015-10, Vol.24 (10), p.380-385

郑齐文崔江维周航余德昭余学峰陆妩郭旗任迪远

2015

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Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment

Chinese physics B, 2015-08, Vol.24 (8), p.609-612

李培郭红霞郭旗张晋新肖尧魏莹崔江维文林刘默寒王信

2015

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Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

Chinese physics B, 2014-10, Vol.23 (10), p.362-368

郑齐文余学峰崔江维郭旗任迪远丛忠超周航

2014

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Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs

Chinese physics letters, 2018-04, Vol.35 (4), p.46102

2018

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A Comparison of Different-Mode Fields Generated from Grounded-Wire Source Based on the 1D Model

Pure and applied geophysics, 2016-02, Vol.173 (2), p.591-606

2016

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An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation

Chinese physics letters, 2017-06, Vol.34 (7), p.173-176

马腾郑齐文崔江维周航苏丹丹余学峰郭旗

2017

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Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment

Wuli xuebao, 2015-04, Vol.64 (8), p.86101

2015

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3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor

Wuli xuebao, 2013-02, Vol.62 (4), p.48501

2013

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Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor

Wuli xuebao, 2014-11, Vol.63 (22), p.226101

2014

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The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET

Wuli xuebao, 2012-01, Vol.61 (2), p.26102

2012

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Research on SRAM functional failure mode induced by total ionizing dose irradiation

Wuli xuebao, 2013-06, Vol.62 (11), p.116101

2013

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Online and offline test method of total dose radiation damage on static random access memory

Wuli xuebao, 2014, Vol.63 (8), p.86101

2014

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Serial ferroelectric memory ionizing radiation effects and annealing characteristics

Wuli xuebao, 2013-08, Vol.62 (15), p.156107

2013

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Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory

Wuli xuebao, 2012-05, Vol.61 (10), p.106103

2012

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Thermodynamic Impact on Total Dose Effect for Semiconductor Components

Faguang xuebao, 2014, Vol.35 (4), p.465-469

2014

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Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor

Wuli xuebao, 2011-06, Vol.60 (6), p.68702

2011

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Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array

Wuli xuebao, 2011-03, Vol.60 (3), p.36106

2011

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Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET

Radiation effects and defects in solids, 2021-12, Vol.176 (11-12), p.1038-1048

2021

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Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs Supported by the National Natural Science Foundation of China under Grant Nos 11605282, 11505282 and U1532261, and the West Light Foundation of the Chinese Academy of Sciences under Grant No 2015-XBQN-B-15

Chinese physics letters, 2018-04, Vol.35 (4)

2018

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Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect TransistorsSupported by the National Natural Science Foundation of China under Grant Nos 11475255, U1532261 and 11505282

Chinese physics letters, 2016-07, Vol.33 (7)

2016

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Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs

The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs

Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress

Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors

Relationship between Brachial-ankle Pulse Wave Velocity and Cardiovascular Risk Factors: A Multi-ethnic Study

Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment

Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs

A Comparison of Different-Mode Fields Generated from Grounded-Wire Source Based on the 1D Model

An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation

Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment

3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor

Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor

The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET

Research on SRAM functional failure mode induced by total ionizing dose irradiation

Online and offline test method of total dose radiation damage on static random access memory

Serial ferroelectric memory ionizing radiation effects and annealing characteristics

Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory

Thermodynamic Impact on Total Dose Effect for Semiconductor Components

Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor

Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array

Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET

Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs Supported by the National Natural Science Foundation of China under Grant Nos 11605282, 11505282 and U1532261, and the West Light Foundation of the Chinese Academy of Sciences under Grant No 2015-XBQN-B-15

Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect TransistorsSupported by the National Natural Science Foundation of China under Grant Nos 11475255, U1532261 and 11505282

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