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Towards identification of silicon vacancy-related electron paramagnetic resonance centers in 4 H -SiC

Physical review. B, 2021-07, Vol.104 (3), p.1, Article 035207

2021

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Fluorescence spectrum and charge state control of divacancy qubits via illumination at elevated temperatures in 4 H silicon carbide

Physical review. B, 2022-04, Vol.105 (16), Article 165108

2022

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NV centers in 3C, 4H, and 6H silicon carbide: A variable platform for solid-state qubits and nanosensors

Physical review. B, 2016-09, Vol.94 (12), p.121202(R)

2016

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Optical Properties of Vanadium in 4 H Silicon Carbide for Quantum Technology

Physical review applied, 2019-07, Vol.12 (1), Article 014015

2019

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Characterization and formation of NV centers in 3C, 4H, and 6H SiC: An ab initio study

Physical review. B, 2017-08, Vol.96 (8)

2017

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Determination of Dislocation Density in Lath Martensite by Means of Electron Backscatter Diffraction

Materials Science Forum, 2017-02, Vol.885, p.275-279

2017

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NV centers in 3 C , 4 H , and 6 H silicon carbide: A variable platform for solid-state qubits and nanosensors

Physical review. B, 2016-09, Vol.94 (12), Article 121202

2016

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First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC

Materials science forum, 2019-07, Vol.963, p.714-717

2019

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Investigation of Mo Defects in 4H-SiC by Means of Density Functional Theory

Materials Science Forum, 2016-05, Vol.858, p.261-264

2016

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Dietary Calcium Intake and Calcium Supplementation in Hungarian Patients with Osteoporosis

International Journal of Endocrinology, 2013-01, Vol.2013 (2013), p.1-8

2013

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Characterization and formation of NV centers in 3 C , 4 H , and 6 H SiC: An ab initio study

Physical review. B, 2017-08, Vol.96 (8), Article 085204

2017

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Towards identification of silicon vacancy-related electron paramagnetic resonance centers in 4H-SiC

Physical review. B, 2021-07, Vol.104 (3)

2021

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Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology

Physical review applied, 2019-07, Vol.12 (1)

2019

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Guidelines for the Use of RFID Technology in Transfusion Medicine

Vox sanguinis, 2010-04, Vol.98 (s2), p.1-24

2010

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Photoluminescence spectrum of divacancy in porous and nanocrystalline cubic silicon carbide

Journal of applied physics, 2022-02, Vol.131 (7)

2022

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A pilóta nélküli légi járművek (UAV) evolúciója

Repulestudomanyi Kozlemenyek, 2021-07, Vol.33 (1), p.171-191

2021

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A légi járművek adatfeldolgozó és adattovábbító rendszere – az Air Data Computer

Repulestudomanyi Kozlemenyek, 2022, Vol.34 (3), p.77-89

2022

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Ab initio determination of pseudospin for paramagnetic defects in SiC

Physical review. B, 2020-12, Vol.102 (24), Article 241201

2020

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Determination of dislocation density by electron backscatter diffraction and X-ray line profile analysis in ferrous lath martensite

Materials characterization, 2016-03, Vol.113, p.117-124

2016

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Investigation of Quantum Bits and Single Photon Sources in Silicon Carbide by Means of Quantum Mechanical Simulations

Csóré, András

2020

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Excitation properties of the divacancy in 4H-SiC

Physical review. B, 2018-11, Vol.98 (19)

2018

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Density functional theory on NV center in 4H SiC

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Incidence of and predisposing factors for pseudoaneurysm formation in a high-volume cardiovascular center

PloS one, 2021-08, Vol.16 (8), p.e0256317-e0256317

2021

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Excitation properties of the divacancy in 4 H -SiC

Physical review. B, 2018-11, Vol.98 (19), Article 195202

2018

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Towards identification of silicon vacancy-related electron paramagnetic resonance centers in 4 H -SiC

Fluorescence spectrum and charge state control of divacancy qubits via illumination at elevated temperatures in 4 H silicon carbide

NV centers in 3C, 4H, and 6H silicon carbide: A variable platform for solid-state qubits and nanosensors

Optical Properties of Vanadium in 4 H Silicon Carbide for Quantum Technology

Characterization and formation of NV centers in 3C, 4H, and 6H SiC: An ab initio study

Determination of Dislocation Density in Lath Martensite by Means of Electron Backscatter Diffraction

NV centers in 3 C , 4 H , and 6 H silicon carbide: A variable platform for solid-state qubits and nanosensors

First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC

Investigation of Mo Defects in 4H-SiC by Means of Density Functional Theory

Dietary Calcium Intake and Calcium Supplementation in Hungarian Patients with Osteoporosis

Characterization and formation of NV centers in 3 C , 4 H , and 6 H SiC: An ab initio study

Towards identification of silicon vacancy-related electron paramagnetic resonance centers in 4H-SiC

Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology

Use of cardiac imaging in chronic coronary syndromes: the EURECA Imaging registry

Guidelines for the Use of RFID Technology in Transfusion Medicine

Photoluminescence spectrum of divacancy in porous and nanocrystalline cubic silicon carbide

A pilóta nélküli légi járművek (UAV) evolúciója

A légi járművek adatfeldolgozó és adattovábbító rendszere – az Air Data Computer

Ab initio determination of pseudospin for paramagnetic defects in SiC

Determination of dislocation density by electron backscatter diffraction and X-ray line profile analysis in ferrous lath martensite

Investigation of Quantum Bits and Single Photon Sources in Silicon Carbide by Means of Quantum Mechanical Simulations

Excitation properties of the divacancy in 4H-SiC

Density functional theory on NV center in 4H SiC

Incidence of and predisposing factors for pseudoaneurysm formation in a high-volume cardiovascular center

Excitation properties of the divacancy in 4 H -SiC

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