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1 µm MOSFET VLSI technology: Part VII-Metal silicide interconnection technology-A future perspective

IEEE transactions on electron devices, 1979-04, Vol.26 (4), p.369-371

1979

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1 /spl mu/m MOSFET VLSI technology. VII. Metal silicide interconnection technology - A future perspective

IEEE journal of solid-state circuits, 1979-04, Vol.14 (2), p.291-293

1979

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Raman scattering in amorphous Si, Ge and III–V semiconductors

Journal of non-crystalline solids, 1972-06, Vol.8, p.179-184

1972

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Manufacturing science and manufacturing competitiveness

IEEE/SEMI International Semiconductor Manufacturing Science Symposium, 1989, p.32-33

Crowder, B.L.

1989

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VLSI Technologies - A future perspective

1981 International Electron Devices Meeting, 1981, p.646-646

Crowder, B.L.

1981

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Erratum: Defining the ``random'' spectrum as used in the channeling technique of nuclear backscattering

Applied physics letters, 1973-04, Vol.22 (7), p.347-347

1973

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The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon

Journal of the Electrochemical Society, 1971, Vol.118 (6), p.943

Crowder, Billy L.

1971

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Manufacturing technology and the role of manufacturing research

Fourth IEEE/CHMT European International Electronic Manufacturing Technology Symposium, 1988, p.112-114

1988

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Ion-implanted microwave MOSFET's

1970 International Electron Devices Meeting, 1970, p.80-80

1970

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ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON

Applied physics letters, 1970-01, Vol.16 (5), p.205-208

1970

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Elastic and Anelastic Behavior of Ion-Implanted Silicon

Applied physics letters, 1972-01, Vol.20 (2), p.88-90

1972

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Ion implantation doping of Si with 70 to 300 keV B, P, and As

IEEE transactions on electron devices, 1968-09, Vol.15 (9), p.687-687

1968

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1 /spl mu/m MOSFET VLSI technology. V. A single-level polysilicon technology using electron-beam lithography

IEEE journal of solid-state circuits, 1979-04, Vol.14 (2), p.275-281

1979

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ANNEALING CHARACTERISTICS OF n -TYPE DOPANTS IN ION-IMPLANTED SILICON

Applied physics letters, 1969-01, Vol.14 (10), p.313-315

1969

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Defining the ``Random'' Spectrum as Used in the Channeling Technique of Nuclear Backscattering

Applied physics letters, 1972-01, Vol.20 (4), p.178-179

1972

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1 µm MOSFET VLSI technology: Part V-A single-level polysilicon technology using electron-beam lithography

IEEE transactions on electron devices, 1979-04, Vol.26 (4), p.353-359

1979

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Range distribution of implanted ions in SiO2, Si3N4, and Al2O3

Applied physics letters, 1973-05, Vol.22 (10), p.490-492

1973

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Light sensitive, efficient electroluminescent ZnTe switching diodes

IEEE transactions on electron devices, 1966-08, Vol.ED-13 (8/9), p.676-676

1966

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The distribution of damage produced by ion implantation of silicon at room temperature

Radiation effects, 1970-01, Vol.6 (1), p.63-75

1970

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Boron atom distributions in ion-implanted silicon by the ( n ,4He) nuclear reaction

Applied physics letters, 1972, Vol.21 (1), p.16-17

1972

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A model for the formation of amorphous Si by ion bombardment

Radiation effects, 1970-01, Vol.6 (1), p.27-32

1970

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Simple Design for an Ion Source of the Oscillating Electron Beam Type

Review of scientific instruments, 1969-01, Vol.40 (1), p.170-171

1969

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X-ray topographic determination of the absence of lateral strains in ion-implanted silicon

Journal of applied physics, 1972-01, Vol.43 (10), p.4262-4263

1972

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Experimental Evaluation of High Energy Ion Implantation Gradients for Possible Fabrication of a Transistor Pedestal Collector

IBM journal of research and development, 1971-11, Vol.15 (6), p.452-456

1971

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Circular etch pits in ion-implanted amorphous silicon films

Applied physics letters, 1973-01, Vol.22 (6), p.274-275, Article 562

1973

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1 µm MOSFET VLSI technology: Part VII-Metal silicide interconnection technology-A future perspective

1 /spl mu/m MOSFET VLSI technology. VII. Metal silicide interconnection technology - A future perspective

Raman scattering in amorphous Si, Ge and III–V semiconductors

Manufacturing science and manufacturing competitiveness

VLSI Technologies - A future perspective

Erratum: Defining the ``random'' spectrum as used in the channeling technique of nuclear backscattering

The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon

Manufacturing technology and the role of manufacturing research

Ion-implanted microwave MOSFET's

ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON

Elastic and Anelastic Behavior of Ion-Implanted Silicon

Ion implantation doping of Si with 70 to 300 keV B, P, and As

1 /spl mu/m MOSFET VLSI technology. V. A single-level polysilicon technology using electron-beam lithography

ANNEALING CHARACTERISTICS OF n -TYPE DOPANTS IN ION-IMPLANTED SILICON

Defining the ``Random'' Spectrum as Used in the Channeling Technique of Nuclear Backscattering

1 µm MOSFET VLSI technology: Part V-A single-level polysilicon technology using electron-beam lithography

Range distribution of implanted ions in SiO2, Si3N4, and Al2O3

Light sensitive, efficient electroluminescent ZnTe switching diodes

The distribution of damage produced by ion implantation of silicon at room temperature

Boron atom distributions in ion-implanted silicon by the ( n ,4He) nuclear reaction

A model for the formation of amorphous Si by ion bombardment

Simple Design for an Ion Source of the Oscillating Electron Beam Type

X-ray topographic determination of the absence of lateral strains in ion-implanted silicon

Experimental Evaluation of High Energy Ion Implantation Gradients for Possible Fabrication of a Transistor Pedestal Collector

Circular etch pits in ion-implanted amorphous silicon films

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