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Measurement of valley splitting in high-symmetry Si/SiGe quantum dots

Applied physics letters, 2011-03, Vol.98 (12), p.123118-123118-3

2011

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Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

Applied physics letters, 2011-08, Vol.99 (6), p.063109-063109-3

2011

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High-gain multi-finger power n-MODFET on Si substrate

Electronics letters, 2006-03, Vol.42 (6), p.375-377

2006

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Partially suppressed shot noise in hopping conduction: observation in SiGe quantum wells

Physical review letters, 2000-07, Vol.85 (2), p.397-400

2000

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Fabrication and characterization of electrostatic Si∕SiGe quantum dots with an integrated read-out channel

Applied physics letters, 2005-11, Vol.87 (22)

2005

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Sputtered gold as an effective Schottky gate for strained Si∕SiGe nanostructures

Applied physics letters, 2007-01, Vol.90 (3)

2007

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Temperature dependence of Sb-heterostructure millimetre-wave diodes

Electronics letters, 2002-01, Vol.38 (2), p.94-95

2002

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Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

IEEE photonics technology letters, 1998-03, Vol.10 (3), p.415-417

1998

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Measurement of the valence-band offset in strained Si/Ge (100) heterojunctions by x-ray photoelectron spectroscopy

Applied physics letters, 1990-02, Vol.56 (6), p.569-571

1990

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Monolithically integrated multichannel SiGe/Si p-i-n-HBT photoreceiver arrays

Journal of lightwave technology, 2000-11, Vol.18 (11), p.1548-1553

2000

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Evidence of segregation in (100) strained Si1-xGex alloys grown at low temperature by molecular beam epitaxy

Applied physics letters, 1990-01, Vol.56 (4), p.367-369

1990

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High electron mobility in SiGe∕Si n-MODFET structures on sapphire substrates

Electronics letters, 2003-09, Vol.39 (18), p.1353

2003

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Applications of variable angle spectroscopic ellipsometry to strained SiGe alloy heterostructures

Thin solid films, 1995-12, Vol.270 (1), p.91-96

1995

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SiGe-Si quantum-well electroabsorption modulators

IEEE photonics technology letters, 1998-06, Vol.10 (6), p.807-809

1998

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Ellipsometric study of Si0.5Ge0.5/Si strained-layer superlattices

Applied physics letters, 1993-04, Vol.62 (14), p.1626-1628

1993

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High mobility SiGe/Si transistor structures on sapphire substrates using ion implantation

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-07, Vol.22 (4), p.1776-1783

2004

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Microstructural Characterization of Heteroepitaxial SiGeC Alloys

Microscopy and microanalysis, 1998-07, Vol.4 (S2), p.658-659

1998

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Growth of superconducting V3Si on Si by molecular beam epitaxial techniques

Applied physics letters, 1988-08, Vol.53 (6), p.514-516

1988

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Characterization of SixGe1-x/Si heterostructures for device applications using spectroscopic ellipsometry

Journal of applied physics, 1993-07, Vol.74 (1), p.586-595

1993

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Band offsets in Si/Si1−x−yGexCy heterojunctions measured by admittance spectroscopy

Applied physics letters, 1997-06, Vol.70 (25), p.3413-3415

1997

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Reliability of microwave SiGe/Si heterojunction bipolar transistors

IEEE microwave and wireless components letters, 2001-10, Vol.11 (10), p.401-403

2001

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Substitutional C fraction and the influence of C on Si dimer diffusion in Si1−yCy alloys grown on (001) and (118) Si

Applied physics letters, 2000-08, Vol.77 (9), p.1310-1312

2000

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Single-gate accumulation-mode InGaAs quantum dot with a vertically integrated charge sensor

Applied physics letters, 2010-01, Vol.96 (4), p.042101-042101-3

2010

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Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices

Applied physics letters, 2002-03, Vol.80 (10), p.1737-1739

2002

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Growth and characterization of superconducting V3Si on Si and Al2O3 by molecular beam epitaxial techniques

Journal of electronic materials, 1989-11, Vol.18 (6), p.757-761

1989

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Measurement of valley splitting in high-symmetry Si/SiGe quantum dots

Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

High-gain multi-finger power n-MODFET on Si substrate

Partially suppressed shot noise in hopping conduction: observation in SiGe quantum wells

Fabrication and characterization of electrostatic Si∕SiGe quantum dots with an integrated read-out channel

Sputtered gold as an effective Schottky gate for strained Si∕SiGe nanostructures

Temperature dependence of Sb-heterostructure millimetre-wave diodes

Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

Measurement of the valence-band offset in strained Si/Ge (100) heterojunctions by x-ray photoelectron spectroscopy

Monolithically integrated multichannel SiGe/Si p-i-n-HBT photoreceiver arrays

Evidence of segregation in (100) strained Si1-xGex alloys grown at low temperature by molecular beam epitaxy

High electron mobility in SiGe∕Si n-MODFET structures on sapphire substrates

Applications of variable angle spectroscopic ellipsometry to strained SiGe alloy heterostructures

SiGe-Si quantum-well electroabsorption modulators

Ellipsometric study of Si0.5Ge0.5/Si strained-layer superlattices

High mobility SiGe/Si transistor structures on sapphire substrates using ion implantation

Microstructural Characterization of Heteroepitaxial SiGeC Alloys

Growth of superconducting V3Si on Si by molecular beam epitaxial techniques

Characterization of SixGe1-x/Si heterostructures for device applications using spectroscopic ellipsometry

Band offsets in Si/Si1−x−yGexCy heterojunctions measured by admittance spectroscopy

Reliability of microwave SiGe/Si heterojunction bipolar transistors

Substitutional C fraction and the influence of C on Si dimer diffusion in Si1−yCy alloys grown on (001) and (118) Si

Single-gate accumulation-mode InGaAs quantum dot with a vertically integrated charge sensor

Thermal conductivity of Si/SiGe and SiGe/SiGe superlattices

Growth and characterization of superconducting V3Si on Si and Al2O3 by molecular beam epitaxial techniques

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