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Mechanisms of etching and polymerization in radiofrequency discharges of CF4–H2, CF4–C2F4, C2F6–H2, C3F8–H2

Journal of applied physics, 1983-03, Vol.54 (3), p.1284-1288

1983

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Deposition of silicon films from SiCl4 glow discharges: A kinetic model of the surface process

Journal of applied physics, 1987-09, Vol.62 (5), p.2050-2056

1987

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Plasma deposition of a–Si, Ge: H, F thin films from SiF4–GeH4–H2 mixtures

Journal of materials research, 1989-04, Vol.4 (2), p.366-372

1989

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Diagnostics and decomposition mechanism in radio-frequency discharges of fluorocarbons utilized for plasma etching or polymerization

Plasma chemistry and plasma processing, 1982-09, Vol.2 (3), p.213-231

1982

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Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloride

Plasma chemistry and plasma processing, 1986-06, Vol.6 (2), p.109-125

1986

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Vibrational analysis of N2(B3Πg and C3Πu) and CO(X) excited in N2 discharge and post discharge

Chemical physics, 1987-03, Vol.112 (3), p.363-372

1987

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Plasma-assisted etching of aluminum in CCl4?Cl2 mixtures

Plasma chemistry and plasma processing, 1989-12, Vol.9 (4), p.513-525

1989

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Mechanism of etching, polymerization and deposition in R.F. (radio frequency) discharges

Pure and applied chemistry, 1985-01, Vol.57 (9), p.1287-1298

1985

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Non-equilibrium vibrational kinetics of CO pumped by vibrationally excited nitrogen molecules: A comparison between theory and experiment

Chemical physics, 1987-02, Vol.111 (3), p.361-370

1987

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The influence of argon addition on the deposition and properties of Si:H, Cl films prepared in a glow discharge

Thin solid films, 1986-01, Vol.135 (2), p.245-250

1986

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Effect of argon addition to SiCl4-H2 mixtures on the optical properties of glow discharge silicon films

Thin solid films, 1985-07, Vol.129 (3-4), p.217-226

1985

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On the use of actinometric emission spectroscopy in SF6-O2 radiofrequency discharges: Theoretical and experimental analysis

Plasma chemistry and plasma processing, 1985-09, Vol.5 (3), p.239-253

1985

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Homogeneous and heterogeneous CO chemical kinetics in liquid-nitrogen cooled 5% COHe discharges

Chemical physics, 1988-08, Vol.124 (1), p.91-101

1988

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Deposition rate and structural properties of microcrystalline glow discharge Si:H, Cl films

Thin solid films, 1983-01, Vol.106 (3), p.145-152

1983

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Boltzmann Equation Analysis of the Electron Gas in CF4 Discharge Plasma

Beiträge aus der Plasmaphysik, 1987, Vol.27 (1), p.15-21

1987

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Kinetic and spectroscopic analysis of NH3 decomposition under R.F. Plasma at moderate pressures

Plasma chemistry and plasma processing, 1981-03, Vol.1 (1), p.19-35

1981

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Infrared and visible analysis of He-CO and He-CO-O2 radiofrequency discharges

Journal of physics. D, Applied physics, 1985-03, Vol.18, p.413-423

1985

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Polymer film formation in C2F6H2 discharges

Thin solid films, 1986-10, Vol.143 (2), p.163-175

1986

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Vibrational distributions of CO in N2 cooled radiofrequency post discharges

Chemical physics letters, 1984-11, Vol.112 (1), p.54-58

1984

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Residence time analysis of uv-visible emitting species in CO-He radiofrequency discharges

Chemical physics, 1983-01, Vol.82 (3), p.395-404

1983

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Characterization and luminescence of a-Si:H:Cl films

Journal of non-crystalline solids, 1981-01, Vol.46 (1), p.95-104

1981

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Spectroscopic diagnostics of CF4-O2 plasmas during Si and SiO2 etching processes

Journal of applied physics, 1981-03, Vol.52 (3), p.1259-1265

1981

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Vibrational kinetics in liquid nitrogen cooled 5% CO-He radio-frequency discharges

Optics communications, 1983-08, Vol.47 (2), p.107-110

1983

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Vibrational kinetics in HeCO reacting discharges

Chemical physics letters, 1983-01, Vol.96 (6), p.674-677

1983

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Optical constants of silicon films deposited by the r.f. glow discharge of SiCl4

Thin solid films, 1981-12, Vol.86 (4), p.359-367

1981

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Mechanisms of etching and polymerization in radiofrequency discharges of CF4–H2, CF4–C2F4, C2F6–H2, C3F8–H2

Deposition of silicon films from SiCl4 glow discharges: A kinetic model of the surface process

Plasma deposition of a–Si, Ge: H, F thin films from SiF4–GeH4–H2 mixtures

Diagnostics and decomposition mechanism in radio-frequency discharges of fluorocarbons utilized for plasma etching or polymerization

Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloride

Vibrational analysis of N2(B3Πg and C3Πu) and CO(X) excited in N2 discharge and post discharge

Plasma-assisted etching of aluminum in CCl4?Cl2 mixtures

Mechanism of etching, polymerization and deposition in R.F. (radio frequency) discharges

Non-equilibrium vibrational kinetics of CO pumped by vibrationally excited nitrogen molecules: A comparison between theory and experiment

The influence of argon addition on the deposition and properties of Si:H, Cl films prepared in a glow discharge

Effect of argon addition to SiCl4-H2 mixtures on the optical properties of glow discharge silicon films

On the use of actinometric emission spectroscopy in SF6-O2 radiofrequency discharges: Theoretical and experimental analysis

Homogeneous and heterogeneous CO chemical kinetics in liquid-nitrogen cooled 5% COHe discharges

Deposition rate and structural properties of microcrystalline glow discharge Si:H, Cl films

Boltzmann Equation Analysis of the Electron Gas in CF4 Discharge Plasma

Kinetic and spectroscopic analysis of NH3 decomposition under R.F. Plasma at moderate pressures

Infrared and visible analysis of He-CO and He-CO-O2 radiofrequency discharges

Polymer film formation in C2F6H2 discharges

Vibrational distributions of CO in N2 cooled radiofrequency post discharges

Residence time analysis of uv-visible emitting species in CO-He radiofrequency discharges

Characterization and luminescence of a-Si:H:Cl films

Spectroscopic diagnostics of CF4-O2 plasmas during Si and SiO2 etching processes

Vibrational kinetics in liquid nitrogen cooled 5% CO-He radio-frequency discharges

Vibrational kinetics in HeCO reacting discharges

Optical constants of silicon films deposited by the r.f. glow discharge of SiCl4

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