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Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

Journal of display technology, 2007-06, Vol.3 (2), p.160-175

2007

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High Power LEDs - Technology Status and Market Applications

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.380-388

2002

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Visible LEDs: Past, Present, and Future

2007 Conference on Lasers and Electro-Optics (CLEO), 2007, p.1-2

Craford, M.G.

2007

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LEDs challenge the incandescents

IEEE circuits and devices magazine, 1992-09, Vol.8 (5), p.24-29

Craford, M.G.

1992

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An overview of visible light emitting diode (LED) development and the potential for AlInGaP devices

IEEE transactions on electron devices, 1993-11, Vol.40 (11), p.2098

Craford, M.G.

1993

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High-Efficiency Zn-Diffused GaAs Electroluminescent Diodes

Journal of applied physics, 1972-02, Vol.43 (2), p.600-608

1972

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Photoluminescence of quasi-direct transitions in disordered In/sub 1-x/Ga/sub x/P/graded GaP alloys

IEEE journal of quantum electronics, 1997-07, Vol.33 (7), p.1123-1131

1997

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Visible light emitting diode technology: high performance, more colors, and moving into incandescent lamp applications

Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 1996, p.28

Craford, M.G.

1996

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Parasitic Reactions between Alkyls and Ammonia in OMVPE

MRS proceedings, 1995, Vol.395, Article 103

1995

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Hydrogenation-defined stripe-geometry In sub 0. 5 (Al sub x Ga sub 1 minus x ) sub 0. 5 P quantum-well lasers

Journal of applied physics, 1990-12, Vol.68:11

1990

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Recent developments in light-emitting-diode technology

IEEE transactions on electron devices, 1977-07, Vol.24 (7), p.935-943

Craford, M.G.

1977

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Chapter 1 Visible Light-Emitting Diodes

Semiconductors and Semimetals, 1999, Vol.64, p.1-47

1999

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Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructures

Journal of crystal growth, 1988, Vol.93 (1-4), p.389-395

1988

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Vapor phase epitaxial materials for LED applications

Proceedings of the IEEE, 1973-01, Vol.61 (7), p.862-880

1973

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The Effect of Nitrogen Doping on GaAs1− x P x Electroluminescent Diodes

Applied physics letters, 1971-09, Vol.19 (6), p.184-186

1971

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Isoelectronic trap transitions in GaAs 1− xP x:N in the region of resonant enhancement ( ENN ∼ EΓ, 0.3< x<0.4)

Solid state communications, 1973, Vol.12 (6), p.489-493

1973

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Characteristics and potential applications of GaAs 1- xP x MIS structures

Solid-state electronics, 1974, Vol.17 (1), p.25-29

1974

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High-flux and high-efficiency nitride-based light-emitting devices

The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2002, Vol.2, p.641-642 vol.2

2002

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Characteristics and potential applications of GaAs1-xPx MIS structures

Solid-state electronics, 1974-01, Vol.17 (1), p.25-29

1974

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Isoelectronic trap transitions in GaAs1−xPx:N in the region of resonant enhancement (ENN ∼ EΓ, 0.3<x<0.4)

Solid state communications, 1973-03, Vol.12 (6), p.489-493

1973

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Resonant enhancement (?) of the recombination probability at the nitrogen-trap, Γ-band edge crossover in GaAs1− xPx: N( EN = EΓ, x ≡ xN)

Solid state communications, 1975-02, Vol.16 (3), p.319-322

1975

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Laser operation of GaAs1− x P x :N ( x = 0.37, 77 °K) on photopumped NN3 pair transitions

Applied physics letters, 1973-04, Vol.22 (8), p.369-371

1973

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Gallium phosphide high-temperature electroluminescent p-n-p-n switches and controlled rectifiers

Journal of applied physics, 1972-01, Vol.43 (8), p.3417-3421

1972

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Monolithic GaP green-emitting LED matrix-addressable arrays

IEEE transactions on electron devices, 1973-11, Vol.20 (11), p.1074-1077

1973

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"Monolithic electrically isolated planar GaP green LED arrays"

1972 International Electron Devices Meeting, 1972, p.12-12

1972

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Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

High Power LEDs - Technology Status and Market Applications

Visible LEDs: Past, Present, and Future

LEDs challenge the incandescents

An overview of visible light emitting diode (LED) development and the potential for AlInGaP devices

High-Efficiency Zn-Diffused GaAs Electroluminescent Diodes

Photoluminescence of quasi-direct transitions in disordered In/sub 1-x/Ga/sub x/P/graded GaP alloys

Visible light emitting diode technology: high performance, more colors, and moving into incandescent lamp applications

Parasitic Reactions between Alkyls and Ammonia in OMVPE

Hydrogenation-defined stripe-geometry In sub 0. 5 (Al sub x Ga sub 1 minus x ) sub 0. 5 P quantum-well lasers

Recent developments in light-emitting-diode technology

Chapter 1 Visible Light-Emitting Diodes

Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructures

Vapor phase epitaxial materials for LED applications

The Effect of Nitrogen Doping on GaAs1− x P x Electroluminescent Diodes

Isoelectronic trap transitions in GaAs 1− xP x:N in the region of resonant enhancement ( ENN ∼ EΓ, 0.3< x<0.4)

Characteristics and potential applications of GaAs 1- xP x MIS structures

High-flux and high-efficiency nitride-based light-emitting devices

Characteristics and potential applications of GaAs1-xPx MIS structures

Isoelectronic trap transitions in GaAs1−xPx:N in the region of resonant enhancement (ENN ∼ EΓ, 0.3<x<0.4)

Resonant enhancement (?) of the recombination probability at the nitrogen-trap, Γ-band edge crossover in GaAs1− xPx: N( EN = EΓ, x ≡ xN)

Laser operation of GaAs1− x P x :N ( x = 0.37, 77 °K) on photopumped NN3 pair transitions

Gallium phosphide high-temperature electroluminescent p-n-p-n switches and controlled rectifiers

Monolithic GaP green-emitting LED matrix-addressable arrays

"Monolithic electrically isolated planar GaP green LED arrays"

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