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InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Applied physics letters, 2004-05, Vol.84 (19), p.3885-3887

2004

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High Power LEDs - Technology Status and Market Applications

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.380-388

2002

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High dislocation densities in high efficiency GaN-based light-emitting diodes

Applied physics letters, 1995-03, Vol.66 (10), p.1249-1251

1995

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High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

Applied physics letters, 1999-10, Vol.75 (16), p.2365-2367

1999

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Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al x Ga1− x )0.5In0.5P/GaP light-emitting diodes

Applied physics letters, 1994-05, Vol.64 (21), p.2839-2841

1994

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High performance AlGaInP visible light-emitting diodes

Applied physics letters, 1990-12, Vol.57 (27), p.2937-2939

1990

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A study of parasitic reactions between NH3 and TMGa or TMAI

Journal of electronic materials, 1996-06, Vol.25 (6), p.1004-1008

1996

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Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

Journal of display technology, 2007-06, Vol.3 (2), p.160-175

2007

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Recombination dynamics in InGaN quantum wells

Applied physics letters, 1996-12, Vol.69 (27), p.4194-4196

1996

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Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer

Applied physics letters, 1992-08, Vol.61 (9), p.1045-1047

1992

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LEDs challenge the incandescents

IEEE circuits and devices magazine, 1992-09, Vol.8 (5), p.24-29

Craford, M.G.

1992

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Optical study of (AlxGa1-x)0.5In0.5P/GaAs semiconductor alloys by spectroscopic ellipsometry

Journal of applied physics, 1993, Vol.73 (1), p.400-406

1993

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The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer

Journal of electronic materials, 1991-12, Vol.20 (12), p.1125-1130

1991

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Photoluminescence of quasi-direct transitions in disordered In1-xGaxP/graded GaP alloys

IEEE journal of quantum electronics, 1997-07, Vol.33 (7), p.1123-1131

1997

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Short-wavelength (≤6400 Å) room-temperature continuous operation of p-n In0.5(AlxGa1-x)0.5P quantum well lasers

Applied physics letters, 1988-11, Vol.53 (19), p.1826-1828

1988

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Impurity-induced layer disordering of high gap Iny(AlxGa1-x)1-yP heterostructures

Applied physics letters, 1988-04, Vol.52 (17), p.1413-1415

1988

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Magnetic properties of donors in GaAsP

Journal of electronic materials, 1991, Vol.20 (1), p.59-62

1991

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Impurity-induced layer disordering in In0.5(AlxGa1-x)0.5P-InGaP quantum-well heterostructures: visible-spectrum-buried heterostructure lasers

Journal of applied physics, 1989-07, Vol.66 (2), p.482-487

1989

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Temperature-dependent minority-carrier lifetime measurements of red AlGaAs light emitting diodes

Journal of electronic materials, 1995-10, Vol.24 (10), p.1407-1412, Article 1407

1995

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Native-oxide stripe-geometry In0.5(AlxsGa1-x)0.5P-In0.5Ga0.5P heterostructure laser diodes

Applied physics letters, 1991-07, Vol.59 (3), p.354-356

1991

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An overview of early studies on persistent photoconductivity and other properties of deep levels in GaAsP : the effect of deep levels on light emitting devices

Journal of electronic materials, 1991, Vol.20 (1), p.3-12

1991

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Hydrogenation-defined stripe-geometry In0.5(AlxGa1-x)0.5P quantum-well lasers

Journal of applied physics, 1990-12, Vol.68 (11), p.5871-5873

1990

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Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers

Journal of electronic materials, 1992-12, Vol.21 (12), p.1133-1139

1992

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Visible light-emitting diodes - Past, present, and very bright future

MRS bulletin, 2000-09, Vol.25 (9), p.27-31

Craford, M G

2000

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Photopumped phonon-assisted laser operation (77 K) of In0.5(AlxGa1-x)0.5P quantum well heterostructures

Applied physics letters, 1989-06, Vol.54 (24), p.2446-2448

1989

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InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

High Power LEDs - Technology Status and Market Applications

High dislocation densities in high efficiency GaN-based light-emitting diodes

High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al x Ga1− x )0.5In0.5P/GaP light-emitting diodes

High performance AlGaInP visible light-emitting diodes

A study of parasitic reactions between NH3 and TMGa or TMAI

Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

Recombination dynamics in InGaN quantum wells

Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer

LEDs challenge the incandescents

Optical study of (AlxGa1-x)0.5In0.5P/GaAs semiconductor alloys by spectroscopic ellipsometry

The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer

Photoluminescence of quasi-direct transitions in disordered In1-xGaxP/graded GaP alloys

Short-wavelength (≤6400 Å) room-temperature continuous operation of p-n In0.5(AlxGa1-x)0.5P quantum well lasers

Impurity-induced layer disordering of high gap Iny(AlxGa1-x)1-yP heterostructures

Magnetic properties of donors in GaAsP

Impurity-induced layer disordering in In0.5(AlxGa1-x)0.5P-InGaP quantum-well heterostructures: visible-spectrum-buried heterostructure lasers

Temperature-dependent minority-carrier lifetime measurements of red AlGaAs light emitting diodes

Native-oxide stripe-geometry In0.5(AlxsGa1-x)0.5P-In0.5Ga0.5P heterostructure laser diodes

An overview of early studies on persistent photoconductivity and other properties of deep levels in GaAsP : the effect of deep levels on light emitting devices

Hydrogenation-defined stripe-geometry In0.5(AlxGa1-x)0.5P quantum-well lasers

Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers

Visible light-emitting diodes - Past, present, and very bright future

Photopumped phonon-assisted laser operation (77 K) of In0.5(AlxGa1-x)0.5P quantum well heterostructures

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