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Extended point defects in crystalline materials: Ge and Si

Physical review letters, 2013-04, Vol.110 (15), p.155501-155501, Article 155501

2013

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Transient diffusion of ion-implanted B in Si : dose, time, and matrix dependence of atomic and electrical profiles

Journal of applied physics, 1990-12, Vol.68 (12), p.6191-6198

1990

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Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique

Applied physics letters, 2012-04, Vol.100 (17), p.172106-172106-4

2012

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Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

Applied physics letters, 2006-08, Vol.89 (6)

2006

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Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Applied physics letters, 2004-03, Vol.84 (12), p.2055-2057

2004

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Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si

Applied physics letters, 2014-12, Vol.105 (22)

2014

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Energetics of Self-Interstitial Clusters in Si

Physical review letters, 1999-05, Vol.82 (22), p.4460-4463

1999

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Mechanisms of B deactivation control by F co-implantation

Applied physics letters, 2005-03, Vol.86 (10), p.101905-101905-3

2005

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Diffusion in a single crystal within a stressed environment

Physical review letters, 2007-10, Vol.99 (15), p.155903-155903, Article 155903

Cowern, N E B

2007

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Raman scattering studies of ultrashallow Sb implants in strained Si

Journal of materials science. Materials in electronics, 2008-04, Vol.19 (4), p.305-309

2008

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Boron uphill diffusion during ultrashallow junction formation

Applied physics letters, 2003-05, Vol.82 (21), p.3647-3649

2003

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On the analysis of the activation mechanisms of sub-melt laser anneals

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.24-30

2008

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Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth

Applied physics letters, 2005-03, Vol.86 (10), p.101913-101913-3

2005

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Formation energies and relative stability of perfect and faulted dislocation loops in silicon

Journal of applied physics, 2000-06, Vol.87 (12), p.8420-8428

2000

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Constraints on micro-Raman strain metrology for highly doped strained Si materials

Applied physics letters, 2008-06, Vol.92 (23)

2008

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Enhanced n-type dopant solubility in tensile-strained Si

Thin solid films, 2008-11, Vol.517 (1), p.331-333

2008

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Raman study of the strain and H2 preconditioning effect on self-assembled Ge island on Si (001)

Journal of materials science. Materials in electronics, 2005-07, Vol.16 (7), p.469-474

2005

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Transient activation model for antimony in relaxed and strained silicon

Solid-state electronics, 2009-11, Vol.53 (11), p.1173-1176

2009

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Modelling of the chemical-pump effect and C clustering

Semiconductor science and technology, 2004-12, Vol.19 (12), p.1339-1342

2004

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Structural and electrical characterisation of ion-implanted strained silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.118-121

2008

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Differential Hall characterisation of ultrashallow doping in advanced Si-based materials

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.229-233

2008

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Impact of grain boundary structures on trapping iron

Journal of crystal growth, 2017-06, Vol.468, p.448-451

2017

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Voids in silicon as a sink for interstitial iron: a density functional study

Journal of crystal growth, 2017-06, Vol.468, p.101-103

2017

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Interstitial Fe-pairs in silicon

Journal of crystal growth, 2017-06, Vol.468, p.54-56

2017

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Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon

Applied physics letters, 2000-02, Vol.76 (7), p.855-857

2000

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Extended point defects in crystalline materials: Ge and Si

Transient diffusion of ion-implanted B in Si : dose, time, and matrix dependence of atomic and electrical profiles

Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique

Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si

Energetics of Self-Interstitial Clusters in Si

Mechanisms of B deactivation control by F co-implantation

Diffusion in a single crystal within a stressed environment

Raman scattering studies of ultrashallow Sb implants in strained Si

Boron uphill diffusion during ultrashallow junction formation

On the analysis of the activation mechanisms of sub-melt laser anneals

Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth

Formation energies and relative stability of perfect and faulted dislocation loops in silicon

Constraints on micro-Raman strain metrology for highly doped strained Si materials

Enhanced n-type dopant solubility in tensile-strained Si

Raman study of the strain and H2 preconditioning effect on self-assembled Ge island on Si (001)

Transient activation model for antimony in relaxed and strained silicon

Modelling of the chemical-pump effect and C clustering

Structural and electrical characterisation of ion-implanted strained silicon

Differential Hall characterisation of ultrashallow doping in advanced Si-based materials

Impact of grain boundary structures on trapping iron

Voids in silicon as a sink for interstitial iron: a density functional study

Interstitial Fe-pairs in silicon

Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon

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