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Recrystallization of CIGSe layers grown by three-step processes: A model based on grain boundary migration

Acta materialia, 2010-10, Vol.58 (17), p.5572-5577

2010

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Impact of Cu-rich growth on the CuIn1-xGaxSe2 surface morphology and related solar cells behaviour

Solar energy materials and solar cells, 2009-11, Vol.93 (11), p.2013-2019

2009

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Influence of Ga content on defects in CuInxGa1-xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy

Thin solid films, 2011-08, Vol.519 (21), p.7312-7316

2011

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Dependence of ZnO:Al properties on the substrate to target position in RF sputtering

Thin solid films, 2008-08, Vol.516 (20), p.7094-7097

2008

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Bandgap properties of the indium sulfide thin-films grown by co-evaporation

Thin solid films, 2009-02, Vol.517 (7), p.2316-2319

2009

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Na distribution in Cu(In,Ga)Se2 thin films: Investigation by atom probe tomography

Scripta materialia, 2015-07, Vol.104, p.83-86

2015

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Influence of grain boundary modification on limited performance of wide bandgap Cu(In,Ga)Se2 solar cells

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Systematic study of the complex structure of N1 Deep Level Transient Spectroscopy signal in Cu(In,Ga)Se2 based heterojunctions

Thin solid films, 2011-08, Vol.519 (21), p.7485-7488

2011

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Influence of absorber copper concentration on the Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS based solar cells performance

Thin solid films, 2009-02, Vol.517 (7), p.2407-2410

2009

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Re-investigation of preferential orientation of Cu(In,Ga)Se2 thin films grown by the three-stage process

Progress in photovoltaics, 2011-08, Vol.19 (5), p.527-536

2011

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Atom probe study of Cu-poor to Cu-rich transition during Cu(In,Ga)Se2 growth

Applied physics letters, 2011-12, Vol.99 (23)

2011

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Characterization of (In1-xAlx)2S3 thin films grown by co-evaporation

Journal of crystal growth, 2010-02, Vol.312 (4), p.502-506

2010

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Nondestructive depth-resolved spectroscopic investigation of the heavily intermixed In2S3/Cu(In,Ga)Se2 interface

Applied physics letters, 2010-05, Vol.96 (18)

2010

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Re‐investigation of preferential orientation of Cu(In,Ga)Se 2 thin films grown by the three‐stage process

Progress in photovoltaics, 2011-08, Vol.19 (5), p.527-536

2011

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Comparative study of Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current–voltage and spectral response measurements

Thin solid films, 2009-02, Vol.517 (7), p.2423-2426

2009

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Atom probe contribution to the caracterisation of CIGSe grain boundaries

2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.001966-001971

2011

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Atom probe study of Cu-poor to Cu-rich transition during Cu(In,Ga)Se 2 growth

Applied physics letters, 2011-12, Vol.99 (23), p.232108-232108-3

2011

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Influence of grain boundary modification on limited performance of wide bandgap Cu(In,Ga)Se{sub 2} solar cells

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Influence of grain boundary modification on limited performance of wide bandgap Cu(In,Ga)Se2solar cells

Applied physics letters, 2014-07, Vol.105 (1)

2014

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Systematic study of the complex structure of N 1 Deep Level Transient Spectroscopy signal in Cu(In,Ga)Se 2 based heterojunctions

Thin solid films, 2011-08, Vol.519 (21), p.7485-7488

2011

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Re-investigation of preferential orientation of Cu(In,Ga)Se(2) thin films grown by the three-stage process

Progress in photovoltaics, 2011, Vol.19 (5)

2011

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Investigation of Cu(In,Ga)Se2/In2S3 diffuse interface by Raman scattering

Thin solid films, 2011-08, Vol.519 (21), p.7553-7555

2011

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Investigation of Cu(In,Ga)Se(2)/In(2)S(3) diffuse interface by Raman scattering

Thin solid films, 2011, Vol.519 (21)

2011

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Atom probe study of Cu-poor to Cu-rich transition during Cu(In,Ga)Se{sub 2} growth

Applied physics letters, 2011-12, Vol.99 (23)

2011

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Influence of Ga content on defects in CuInxGa1<ce:hsp sp="0.12"/>-<ce:hsp sp="0.12"/>xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy

Thin solid films, 2011-08, Vol.519 (21), p.7312-7316

2011

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Recrystallization of CIGSe layers grown by three-step processes: A model based on grain boundary migration

Impact of Cu-rich growth on the CuIn1-xGaxSe2 surface morphology and related solar cells behaviour

Influence of Ga content on defects in CuInxGa1-xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy

Dependence of ZnO:Al properties on the substrate to target position in RF sputtering

Bandgap properties of the indium sulfide thin-films grown by co-evaporation

Na distribution in Cu(In,Ga)Se2 thin films: Investigation by atom probe tomography

Influence of grain boundary modification on limited performance of wide bandgap Cu(In,Ga)Se2 solar cells

Systematic study of the complex structure of N1 Deep Level Transient Spectroscopy signal in Cu(In,Ga)Se2 based heterojunctions

Influence of absorber copper concentration on the Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS based solar cells performance

Re-investigation of preferential orientation of Cu(In,Ga)Se2 thin films grown by the three-stage process

Atom probe study of Cu-poor to Cu-rich transition during Cu(In,Ga)Se2 growth

Characterization of (In1-xAlx)2S3 thin films grown by co-evaporation

Nondestructive depth-resolved spectroscopic investigation of the heavily intermixed In2S3/Cu(In,Ga)Se2 interface

Re‐investigation of preferential orientation of Cu(In,Ga)Se 2 thin films grown by the three‐stage process

Comparative study of Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current–voltage and spectral response measurements

Atom probe contribution to the caracterisation of CIGSe grain boundaries

Atom probe study of Cu-poor to Cu-rich transition during Cu(In,Ga)Se 2 growth

Influence of grain boundary modification on limited performance of wide bandgap Cu(In,Ga)Se{sub 2} solar cells

Influence of grain boundary modification on limited performance of wide bandgap Cu(In,Ga)Se2solar cells

Systematic study of the complex structure of N 1 Deep Level Transient Spectroscopy signal in Cu(In,Ga)Se 2 based heterojunctions

Re-investigation of preferential orientation of Cu(In,Ga)Se(2) thin films grown by the three-stage process

Investigation of Cu(In,Ga)Se2/In2S3 diffuse interface by Raman scattering

Investigation of Cu(In,Ga)Se(2)/In(2)S(3) diffuse interface by Raman scattering

Atom probe study of Cu-poor to Cu-rich transition during Cu(In,Ga)Se{sub 2} growth

Influence of Ga content on defects in CuInxGa1<ce:hsp sp="0.12"/>-<ce:hsp sp="0.12"/>xSe2 based solar cell absorbers investigated by sub gap modulated photocurrent and admittance spectroscopy

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