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Differences in standard metabolic rate at the range edge versus the center of an expanding invasive population of Xenopus laevis in the West of France

Journal of zoology (1987), 2018-07, Vol.305 (3), p.163-172

2018

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Model-Based Probabilistic Reasoning for Self-Diagnosis of Telecommunication Networks: Application to a GPON-FTTH Access Network

Journal of network and systems management, 2017-07, Vol.25 (3), p.558-590

2017

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Automated Proofs for Asymmetric Encryption

Journal of automated reasoning, 2011-04, Vol.46 (3-4), p.261-291

2011

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Changes in the aquatic macroinvertebrate communities throughout the expanding range of an invasive anuran

Food webs, 2018-12, Vol.17, p.e00098, Article e00098

2018

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Inductively coupled plasma — plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.252-256

2001

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Synthèse et évaluation pharmacologique de 2-(2 et-4-pyridinyl)indane-1,3-diones et d'analogues structuraux à potentialités anti-inflammatoire et antitumorale

Annales pharmaceutiques françaises, 1998, Vol.56 (4), p.160-168

1998

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Validation of the HIV Dementia Scale in an elderly cohort of patients with subcortical cognitive impairment caused by subcortical ischaemic vascular disease or a normal pressure hydrocephalus

Dementia and geriatric cognitive disorders, 2004, Vol.18 (1), p.109-114

2004

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Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1995-11, Vol.13 (6), p.2900-2907

1995

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A Monte Carlo simulation of silicon nitride thin film microstructure in ultraviolet localized-chemical vapor deposition

Computational materials science, 1998-02, Vol.10 (1-4), p.116-126

1998

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Atomistic comparative study of VUV photodeposited silicon nitride on InP(1 0 0) by simulation and atomic force microscopy: discrete representation and topological analysis

Computational materials science, 2000-06, Vol.17 (2-4), p.525-533

2000

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Electrical properties of metal–insulator–semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1997-11, Vol.15 (6), p.3143-3153

1997

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France Telecom's PON deployment, learnt lessons and next steps

2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC), 2013, p.1-3

2013

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Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy

Applied surface science, 2000-02, Vol.154, p.337-344

2000

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Non-carboxylic antiinflammatory compounds. III. N-(4,6-Dimethylpyridin-2-yl)arylcarboxamides and arylthiocarboxamides acting as brain edema inhibitors

European journal of medicinal chemistry, 1995, Vol.30 (12), p.915-924

1995

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N-Pyridinyl-indole-3-(alkyl)carboxamides and derivatives as potential systemic and topical inflammation inhibitors

European journal of medicinal chemistry, 2001-06, Vol.36 (6), p.545-553

2001

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Silice UVCVD pour transistors MISFET autoalignés sur InP

Revue de physique appliquée, 1990, Vol.25 (9), p.935-939

1990

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Pastiches et parodies: Une anti-anthologie

Courant, Elsa

2016

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Modeling and dynamic simulation of ultraviolet induced growing interfaces

Applied surface science, 1999, Vol.138, p.394-400

1999

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UVCVD dielectric films for InP-based optoelectronic devices

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-06, Vol.20 (1), p.134-140

1993

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Low Energy, High Density Plasma (ICP) for Low Defect Etching and Deposition Applications on Compound Semiconductors

MRS proceedings, 1999, Vol.573, Article 189

1999

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UV-deposited silicon nitride coupled with XeF2 surface cleaning for III-V optoelectronic device passivation

Microelectronic engineering, 1997-06, Vol.36 (1-4), p.69-72

1997

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Synthesis and antiallergic activity of N-(pyridin-2-yl)-3-(piperazin-1-yl) propanamides

European journal of medicinal chemistry, 1993, Vol.28 (10), p.821-824

1993

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A module calculus for pure type systems

Typed Lambda Calculi and Applications, 1997, p.112-128

1997

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Passivation of GaAs with Sulphur Surface Treatment and UVCVD Silicon Nitride Cap Layer

Materials science forum, 1995, Vol.185-188, p.179-184

1995

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Passivation of InP-based HBTs for high bit rate circuit applications

Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials, 1997, p.637-640

1997

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Differences in standard metabolic rate at the range edge versus the center of an expanding invasive population of Xenopus laevis in the West of France

Model-Based Probabilistic Reasoning for Self-Diagnosis of Telecommunication Networks: Application to a GPON-FTTH Access Network

Automated Proofs for Asymmetric Encryption

Changes in the aquatic macroinvertebrate communities throughout the expanding range of an invasive anuran

Inductively coupled plasma — plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

Synthèse et évaluation pharmacologique de 2-(2 et-4-pyridinyl)indane-1,3-diones et d'analogues structuraux à potentialités anti-inflammatoire et antitumorale

Validation of the HIV Dementia Scale in an elderly cohort of patients with subcortical cognitive impairment caused by subcortical ischaemic vascular disease or a normal pressure hydrocephalus

Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition

A Monte Carlo simulation of silicon nitride thin film microstructure in ultraviolet localized-chemical vapor deposition

Atomistic comparative study of VUV photodeposited silicon nitride on InP(1 0 0) by simulation and atomic force microscopy: discrete representation and topological analysis

Electrical properties of metal–insulator–semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance

France Telecom's PON deployment, learnt lessons and next steps

Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy

Non-carboxylic antiinflammatory compounds. III. N-(4,6-Dimethylpyridin-2-yl)arylcarboxamides and arylthiocarboxamides acting as brain edema inhibitors

N-Pyridinyl-indole-3-(alkyl)carboxamides and derivatives as potential systemic and topical inflammation inhibitors

Silice UVCVD pour transistors MISFET autoalignés sur InP

Pastiches et parodies: Une anti-anthologie

Modeling and dynamic simulation of ultraviolet induced growing interfaces

UVCVD dielectric films for InP-based optoelectronic devices

Low Energy, High Density Plasma (ICP) for Low Defect Etching and Deposition Applications on Compound Semiconductors

UV-deposited silicon nitride coupled with XeF2 surface cleaning for III-V optoelectronic device passivation

Synthesis and antiallergic activity of N-(pyridin-2-yl)-3-(piperazin-1-yl) propanamides

A module calculus for pure type systems

Passivation of GaAs with Sulphur Surface Treatment and UVCVD Silicon Nitride Cap Layer

Passivation of InP-based HBTs for high bit rate circuit applications

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