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Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

Journal of applied physics, 2012-09, Vol.112 (5)

2012

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High-speed graded-channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz

Electronics letters, 2020-06, Vol.56 (13), p.678-680

2020

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Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With fT of 260 GHz

IEEE electron device letters, 2011-08, Vol.32 (8), p.1074-1076

2011

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Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.1063-1067

2011

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Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

Applied physics letters, 2008-09, Vol.93 (11)

2008

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Multilayer, low-parasitic, interconnection scheme for advanced submillimetre-wave GaN circuits

Electronics letters, 2014-02, Vol.50 (4), p.302-303

2014

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Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm g and 112-GHz f

IEEE electron device letters, 2010-10, Vol.31 (10), p.1116-1118

2010

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Blockade of CXCR3 Receptor:Ligand Interactions Reduces Leukocyte Recruitment to the Lung and the Severity of Experimental Idiopathic Pneumonia Syndrome

The Journal of immunology (1950), 2004-08, Vol.173 (3), p.2050-2059

2004

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Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm gm and 112-GHz fT

IEEE electron device letters, 2010-10, Vol.31 (10), p.1116-1118

2010

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Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

Journal of applied physics, 2008-05, Vol.103 (9), p.093529-093529-7

2008

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Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films

Physica status solidi. C, 2008-05, Vol.5 (6), p.1750-1752

2008

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A critical role for CCR2/MCP-1 interactions in the development of idiopathic pneumonia syndrome after allogeneic bone marrow transplantation

Blood, 2004-03, Vol.103 (6), p.2417-2426

2004

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Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

IEEE electron device letters, 2006-04, Vol.27 (4), p.205-207

2006

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Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment

IEEE electron device letters, 2006-04, Vol.27 (4), p.214-216

2006

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GaN Technology for E, W and G-Band Applications

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2014, p.1-4

2014

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Donor-derived TNF-α regulates pulmonary chemokine expression and the development of idiopathic pneumonia syndrome after allogeneic bone marrow transplantation

Blood, 2004-07, Vol.104 (2), p.586-593

2004

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1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

IEEE electron device letters, 2011-05, Vol.32 (5), p.632-634

2011

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W-Band GaN MMIC with 842 mW output power at 88 GHz

2010 IEEE MTT-S International Microwave Symposium, 2010, p.237-239

2010

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Characterization of majority and minority carrier deep levels in p -type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

Journal of applied physics, 2008-03, Vol.103 (6), p.063722-063722-6

2008

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Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

IEEE electron device letters, 2007-11, Vol.28 (11), p.945-947

2007

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Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2006-04, Vol.289 (2), p.587-595

2006

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Donor T-cell production of RANTES significantly contributes to the development of idiopathic pneumonia syndrome after allogeneic stem cell transplantation

Blood, 2005-03, Vol.105 (6), p.2249-2257

2005

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Vertically scaled GaN/AlN DH-HEMTs with regrown n+GaN ohmic contacts by MBE

68th Device Research Conference, 2010, p.159-160

2010

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Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy

IEICE transactions on electronics, 2006-07, Vol.E89-C (7), p.906-912

CORRION, A.

2006

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Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With f of 260 GHz

IEEE electron device letters, 2011-08, Vol.32 (8), p.1074-1076

2011

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Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

High-speed graded-channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With fT of 260 GHz

Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth

Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

Multilayer, low-parasitic, interconnection scheme for advanced submillimetre-wave GaN circuits

Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm g and 112-GHz f

Blockade of CXCR3 Receptor:Ligand Interactions Reduces Leukocyte Recruitment to the Lung and the Severity of Experimental Idiopathic Pneumonia Syndrome

Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm gm and 112-GHz fT

Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films

A critical role for CCR2/MCP-1 interactions in the development of idiopathic pneumonia syndrome after allogeneic bone marrow transplantation

Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment

GaN Technology for E, W and G-Band Applications

Donor-derived TNF-α regulates pulmonary chemokine expression and the development of idiopathic pneumonia syndrome after allogeneic bone marrow transplantation

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

W-Band GaN MMIC with 842 mW output power at 88 GHz

Characterization of majority and minority carrier deep levels in p -type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy

Donor T-cell production of RANTES significantly contributes to the development of idiopathic pneumonia syndrome after allogeneic stem cell transplantation

Vertically scaled GaN/AlN DH-HEMTs with regrown n+GaN ohmic contacts by MBE

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With f of 260 GHz

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