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Very high efficiency triple junction solar cells grown by MOVPE

Journal of crystal growth, 2008-11, Vol.310 (23), p.5204-5208

2008

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High-efficiency quadruple junction solar cells using OMVPE with inverted metamorphic device structures

Journal of crystal growth, 2010-04, Vol.312 (8), p.1370-1374

2010

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Development of a parametric optical constant model for Hg1−xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth

Thin solid films, 1998-02, Vol.313-314, p.137-142

1998

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IMM experimentation in the next frontier: Emcore'S participation in the MISSE-8 program

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.000110-000112

2010

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Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-07, Vol.19 (4), p.1510-1514

2001

Volltextzugriff (PDF)

Path to a drop-in replacement for current technologies with the 33%, large area, IMM cell

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.000113-000116

2010

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Experimental Results From Performance Improvement and Radiation Hardening of Inverted Metamorphic Multijunction Solar Cells

IEEE journal of photovoltaics, 2012-07, Vol.2 (3), p.377-381

2012

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Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometry

Thin solid films, 1998-02, Vol.313 (1-2), p.490-495

1998

Volltextzugriff (PDF)

Evolution of a 2.05 eV AlGaInP top sub-cell for 5 and 6J-IMM applications

2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.002788-002791

2012

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In-situ spectroscopic ellipsometry of HgCdTe

Journal of electronic materials, 1996-08, Vol.25 (8), p.1406-1410

1996

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Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-05, Vol.20 (3), p.1200-1204

2002

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Application of micro-airbridge isolation in high speed HBT fabrication

Electronics letters, 1993-01, Vol.29 (1), p.26-27

1993

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Initial results of the monolithically grown six-junction inverted metamorphic multi-junction solar cell

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 2012, p.1-4

2012

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MBE growth of large diameter InP-based lattice-matched and metamorphic HBTs

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198), 2001, p.284-287

2001

Volltextzugriff (PDF)

Consideration of High Bandgap Subcells for Advanced Multijunction Solar Cells

2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006, Vol.1, p.838-841

2006

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Ellipsometric analysis of CdZnTe preparation for HgCdTe MBE growth

Journal of crystal growth, 1997-05, Vol.175-176, p.659-664

1997

Volltextzugriff (PDF)

A narrow-channel, 0.2- mu m gate-length, double-quantum-well pseudomorphic MODFET with high power gain at millimeter-wave frequencies

IEEE electron device letters, 1990-11, Vol.11 (11), p.493-495

1990

Volltextzugriff (PDF)

Production of next generation InP-HBT epiwafers by MBE

International Conference onIndium Phosphide and Related Materials, 2003, 2003, p.385-388

2003

Volltextzugriff (PDF)

Dielectric assisted liftoff technique for the formation and monolithic integration of electronic and optical devices

Applied physics letters, 1990-12, Vol.57 (24), p.2576-2578

1990

Volltextzugriff (PDF)

High-gain, V-band, low-noise MMIC amplifiers using pseudomorphic MODFETs

IEEE electron device letters, 1990-01, Vol.11 (1), p.24-26

1990

Volltextzugriff (PDF)

MBE growth of high quality metamorphic HEMT structures on GaAs

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107), 2000, p.392-395

2000

Volltextzugriff (PDF)

Evolution of the high efficiency triple junction solar cell for space power

2008 33rd IEEE Photovoltaic Specialists Conference, 2008, p.1-6

2008

Volltextzugriff (PDF)

60-GHz pseudomorphic-MODFET low-noise MMIC amplifiers

IEEE electron device letters, 1989-04, Vol.10 (4), p.165-167

1989

Volltextzugriff (PDF)

Experimental results from performance improvement and radiation hardening of inverted metamorphic multi-junction solar cells

2011 37th IEEE Photovoltaic Specialists Conference, 2011, p.001217-001217

2011

Volltextzugriff (PDF)

Cost-effective, high-volume molecular beam epitaxy using a multi 6-in wafer reactor

Journal of crystal growth, 2001-07, Vol.227, p.143-149

2001

Volltextzugriff (PDF)

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Very high efficiency triple junction solar cells grown by MOVPE

High-efficiency quadruple junction solar cells using OMVPE with inverted metamorphic device structures

Development of a parametric optical constant model for Hg1−xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth

IMM experimentation in the next frontier: Emcore'S participation in the MISSE-8 program

Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates

Path to a drop-in replacement for current technologies with the 33%, large area, IMM cell

Experimental Results From Performance Improvement and Radiation Hardening of Inverted Metamorphic Multijunction Solar Cells

Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometry

Evolution of a 2.05 eV AlGaInP top sub-cell for 5 and 6J-IMM applications

In-situ spectroscopic ellipsometry of HgCdTe

Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

Application of micro-airbridge isolation in high speed HBT fabrication

Initial results of the monolithically grown six-junction inverted metamorphic multi-junction solar cell

MBE growth of large diameter InP-based lattice-matched and metamorphic HBTs

Consideration of High Bandgap Subcells for Advanced Multijunction Solar Cells

Ellipsometric analysis of CdZnTe preparation for HgCdTe MBE growth

A narrow-channel, 0.2- mu m gate-length, double-quantum-well pseudomorphic MODFET with high power gain at millimeter-wave frequencies

Production of next generation InP-HBT epiwafers by MBE

Dielectric assisted liftoff technique for the formation and monolithic integration of electronic and optical devices

High-gain, V-band, low-noise MMIC amplifiers using pseudomorphic MODFETs

MBE growth of high quality metamorphic HEMT structures on GaAs

Evolution of the high efficiency triple junction solar cell for space power

60-GHz pseudomorphic-MODFET low-noise MMIC amplifiers

Experimental results from performance improvement and radiation hardening of inverted metamorphic multi-junction solar cells

Cost-effective, high-volume molecular beam epitaxy using a multi 6-in wafer reactor

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