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Structure of the (1 1 1) hydrogen platelet in silicon

Physica. B, Condensed matter, 1991-04, Vol.170 (1-4), p.223-226

1991

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Configurations and Properties of Hydrogen in Crystalline Semiconductors

Materials science forum, 1989-01, Vol.38-41, p.25-38

1989

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EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexes

Physical review. B, Solid state, 1976-03, Vol.13 (6), p.2653-2666

1976

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Theoretical studies on the core structure of the 450°C oxygen thermal donors in silicon

Physical review. B, Condensed matter, 1992-05, Vol.45 (20), p.11612-11626

1992

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Correlated-Uncorrelated Reaction Kinetics in a Discrete Lattice

Physical review letters, 1968-01, Vol.21 (12), p.817-819

Corbett, James W.

1968

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Interaction of point defects with hydrogen in germanium

Japanese Journal of Applied Physics, 1983-11, Vol.22 (11), p.L724-L726

1983

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State and motion of hydrogen in crystalline silicon

Physical review. B, Condensed matter, 1988-04, Vol.37 (12), p.6887-6892

1988

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Kinetic model for hydrogen reactions in boron-doped silicon

Journal of applied physics, 1993-03, Vol.73 (6), p.2751-2754

1993

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EPR Studies in Neutron-Irradiated Silicon: A Negative Charge State of a Nonplanar Five-Vacancy Cluster ( V 5 − )

Physical review. B, Solid state, 1973-09, Vol.8 (6), p.2810-2826

1973

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Hydrogen in Semiconductors: Crystal growth and device processing

Advanced materials (Weinheim), 1992-05, Vol.4 (5), p.332-340

1992

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Silicon-interstitial-oxygen-interstitial complex as a model of the 450 °C oxygen thermal donor in silicon

Physical review letters, 1991-02, Vol.66 (6), p.747-749

1991

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Evaluation of semiempirical quantum-chemical methods in solid-state applications. I: Molecular-cluster calculations of defects in silicon

Physical review. B, Condensed matter, 1987-12, Vol.36 (18), p.9612-9618

1987

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Morphology Change of Oxygen Precipitates in Cz-Si Wafers during Two-Step Heat-Treatment

Materials science forum, 1992-01, Vol.83-87, p.1475-1480

1992

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Reactive ion etching of SiGe alloys using fluorine-containing plasmas

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1993-09, Vol.11 (5), p.2492-2495

1993

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Don’t forget Prometheus

American journal of physics, 1989-01, Vol.57 (1), p.11-11

Corbett, James W.

1989

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Reactive ion etching of SiGe alloys using CF2Cl2

Journal of applied physics, 1992-02, Vol.71 (4), p.1936-1942

1992

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New Traps for H0 in Boron- and Phosphorus-Doped Si

Materials science forum, 1992-01, Vol.83-87, p.27-32

1992

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Some Recent Books on Solar Cells

IEEE transactions on nuclear science, 1977-04, Vol.24 (2), p.940-940

Corbett, James W.

1977

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Solution manuals and students

American journal of physics, 1985-12, Vol.53 (12), p.1132-1132

Corbett, James W.

1985

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A New Photoluminescent Center in Mercury-Doped Silicon

Materials science forum, 1993-10, Vol.143-147, p.117-122

1993

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A New Method for Measuring Ion Implantation Amorphous Dose In Situ

MRS proceedings, 1991, Vol.235, Article 45

1991

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On the kinetics of thermal donor formation in silicon

Journal of materials research, 1986-08, Vol.1 (4), p.527-536

1986

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Long-Range Correlations and Hydrogen Diffusion in Silicon

Materials science forum, 1992-01, Vol.83-87, p.57-62

1992

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Interactions, Stability and Dimensionality in the Problem of Defect Transformation in Semiconductors under Irradiation

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 1992-01, Vol.90, p.130-169

1992

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Amorphization of Semiconductors under Irradiation

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 1992-01, Vol.90, p.31-63

1992

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Structure of the (1 1 1) hydrogen platelet in silicon

Configurations and Properties of Hydrogen in Crystalline Semiconductors

EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexes

Theoretical studies on the core structure of the 450°C oxygen thermal donors in silicon

Correlated-Uncorrelated Reaction Kinetics in a Discrete Lattice

Interaction of point defects with hydrogen in germanium

State and motion of hydrogen in crystalline silicon

Kinetic model for hydrogen reactions in boron-doped silicon

EPR Studies in Neutron-Irradiated Silicon: A Negative Charge State of a Nonplanar Five-Vacancy Cluster ( V 5 − )

Hydrogen in Semiconductors: Crystal growth and device processing

Silicon-interstitial-oxygen-interstitial complex as a model of the 450 °C oxygen thermal donor in silicon

Evaluation of semiempirical quantum-chemical methods in solid-state applications. I: Molecular-cluster calculations of defects in silicon

Morphology Change of Oxygen Precipitates in Cz-Si Wafers during Two-Step Heat-Treatment

Reactive ion etching of SiGe alloys using fluorine-containing plasmas

Don’t forget Prometheus

Reactive ion etching of SiGe alloys using CF2Cl2

New Traps for H0 in Boron- and Phosphorus-Doped Si

Some Recent Books on Solar Cells

Solution manuals and students

A New Photoluminescent Center in Mercury-Doped Silicon

A New Method for Measuring Ion Implantation Amorphous Dose In Situ

On the kinetics of thermal donor formation in silicon

Long-Range Correlations and Hydrogen Diffusion in Silicon

Interactions, Stability and Dimensionality in the Problem of Defect Transformation in Semiconductors under Irradiation

Amorphization of Semiconductors under Irradiation

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