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The real structure of epsilon -Ga2O3 and its relation to Kappa -phase

CrystEngComm, 2017-03, Vol.19 (11), p.1509-1516

2017

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Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface

Nanoscale, 2020-10, Vol.12 (37), p.1947-19476

2020

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MOCVD of AlN on epitaxial graphene at extreme temperatures

CrystEngComm, 2021, Vol.23 (2), p.385-39

2021

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Atomic layer deposited Fe-sulfide layers with pyrrhotite structure controlled by the deposition temperature

Thin solid films, 2024-04, Vol.794, p.140267, Article 140267

2024

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Material proposal for 2D indium oxide

Applied surface science, 2021-05, Vol.548, p.149275, Article 149275

2021

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Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

IEEE transactions on electron devices, 2018-07, Vol.65 (7), p.2939-2947

2018

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Atomic layer deposition and characterization of Zn-doped Ga2O3 films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-05, Vol.39 (3)

2021

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n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion

Acta materialia, 2021-05, Vol.210, p.116848, Article 116848

2021

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Nucleation and growth of Mg-bearing calcite in a shallow, calcareous lake

Earth and planetary science letters, 2018-08, Vol.496, p.20-28

2018

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Spark plasma sintering of graphene reinforced silicon carbide ceramics

Ceramics international, 2017-08, Vol.43 (12), p.9005-9011

2017

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Temperature Dependent Vertical Conduction of GaN HEMT Structures on Silicon and Bulk GaN Substrates

Physica status solidi. A, Applications and materials science, 2019-01, Vol.216 (1), p.n/a

2019

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The structural and mechanical characterization of TiC and TiC/Ti thin films grown by DC magnetron sputtering

Journal of the European Ceramic Society, 2018-07, Vol.38 (7), p.2886-2892

2018

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Toughening of silicon nitride ceramics by addition of multilayer graphene

Ceramics international, 2019-03, Vol.45 (4), p.4810-4816

2019

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High-Throughput Micro-Combinatorial TEM Phase Mapping of the DC Magnetron Sputtered YxTi1−xOy Thin Layer System

Nanomaterials (Basel, Switzerland), 2024-05, Vol.14 (11), p.925

2024

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Structural study of MgO and Mg-doped ZnO thin films grown by atomic layer deposition

Materials science in semiconductor processing, 2019-04, Vol.93, p.6-11

2019

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Structural and electrical investigation of Al/Ti/TiN/Au based N-face n-GaN contact stack

Materials science in semiconductor processing, 2024-06, Vol.175, p.108250, Article 108250

2024

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High-temperature evolution of diamond-SiC composites

Processing and Application of Ceramics, 2022-01, Vol.16 (1), p.69-77

2022

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Electron crystallographic study of a kaolinite single crystal

Applied clay science, 2014-03, Vol.90, p.6-10

2014

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Formation of a Graphene-Like SiN Layer on the Surface Si(111)

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1511-1517

2018

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Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Nanomaterials (Basel, Switzerland), 2021-12, Vol.11 (12), p.3316

2021

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InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD21

2019

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Investigation of the intermediate layers formed by austenitic nitrocarburising

International journal of microstructure and materials properties, 2016, Vol.11 (1/2), p.34

2016

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Submicroscopic accessory minerals overprinting clay mineral REE patterns (celadonite–glauconite group examples)

Chemical geology, 2010-01, Vol.269 (3), p.312-328

2010

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On the symmetry of wulfenite (Pb[MoO4]) from Mežica (Slovenia)

Acta crystallographica. Section C, Crystal structure communications, 2011-06, Vol.67 (6), p.i33-i35

2011

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CVT and PVT growth and characterization of GaS crystals

Materials science & engineering. B, Solid-state materials for advanced technology, 2020-11, Vol.261, p.114623, Article 114623

2020

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The real structure of epsilon -Ga2O3 and its relation to Kappa -phase

Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface

MOCVD of AlN on epitaxial graphene at extreme temperatures

Atomic layer deposited Fe-sulfide layers with pyrrhotite structure controlled by the deposition temperature

Material proposal for 2D indium oxide

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Atomic layer deposition and characterization of Zn-doped Ga2O3 films

n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion

Nucleation and growth of Mg-bearing calcite in a shallow, calcareous lake

Spark plasma sintering of graphene reinforced silicon carbide ceramics

Temperature Dependent Vertical Conduction of GaN HEMT Structures on Silicon and Bulk GaN Substrates

The structural and mechanical characterization of TiC and TiC/Ti thin films grown by DC magnetron sputtering

Toughening of silicon nitride ceramics by addition of multilayer graphene

High-Throughput Micro-Combinatorial TEM Phase Mapping of the DC Magnetron Sputtered YxTi1−xOy Thin Layer System

Structural study of MgO and Mg-doped ZnO thin films grown by atomic layer deposition

Structural and electrical investigation of Al/Ti/TiN/Au based N-face n-GaN contact stack

High-temperature evolution of diamond-SiC composites

Electron crystallographic study of a kaolinite single crystal

Formation of a Graphene-Like SiN Layer on the Surface Si(111)

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region

Investigation of the intermediate layers formed by austenitic nitrocarburising

Submicroscopic accessory minerals overprinting clay mineral REE patterns (celadonite–glauconite group examples)

On the symmetry of wulfenite (Pb[MoO4]) from Mežica (Slovenia)

CVT and PVT growth and characterization of GaS crystals

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