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Charging effect simulation model used in simulations of plasma etching of silicon

Journal of applied physics, 2012-10, Vol.112 (8)

2012

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Mitigation of plasma-induced damage in porous low-k dielectrics by cryogenic precursor condensation

Journal of physics. D, Applied physics, 2016-05, Vol.49 (17), p.175203-175214

2016

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Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask

Micro and Nano Engineering, 2021-08, Vol.12, p.100089, Article 100089

2021

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Dispersion of silicone oil in water surfactant solution: Effect of impeller speed, oil viscosity and addition point on drop size distribution

Chemical engineering and processing, 2009-02, Vol.48 (2), p.633-642

2009

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Is Technological Change Threatening the Very Existence of “Traditional” Survey Research and, if So, What should we do about it?

International journal of market research, 2017-03, Vol.59 (2), p.153-155

Cooke, Mike

2017

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Atomic layer etching in close-to-conventional plasma etch tools

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-01, Vol.35 (1)

2017

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Viewpoint: 'Is technological change threatening the very existence of "traditional" survey research and, if so, what should we do about it?'

International journal of market research, 2017-04, Vol.59 (2), p.153

Cooke, Mike

2017

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Modelling the oxidation of seventeen volatile organic compounds to track yields of CO and CO2

Atmospheric environment (1994), 2010-10, Vol.44 (31), p.3797-3804

2010

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A Fully Automated High-Throughput Flow Cytometry Screening System Enabling Phenotypic Drug Discovery

SLAS discovery, 2018-08, Vol.23 (7), p.697-707

2018

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Web 2.0, Social Networks and the Future of Market Research

International journal of market research, 2008-01, Vol.50 (2), p.267-292

2008

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Fabrication and properties of etched GaN nanorods

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.631-634

2012

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Advantages of the hollow (concave) turbine for multi-phase agitation under intense operating conditions

Chemical engineering science, 2005-10, Vol.60 (20), p.5529-5543

2005

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High yield growth of vertically aligned carbon nanostructure through low frequency induced plasma enhanced chemical vapour deposition

Plasma Research Express, 2019-08, Vol.1 (3), p.35011

2019

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A Raman metrology approach to quality control of 2D MoS2 film fabrication

Journal of physics. D, Applied physics, 2017-04, Vol.50 (18)

2017

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Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self‐limiting process for aspect ratio independent etching

Plasma processes and polymers, 2019-09, Vol.16 (9), p.n/a

2019

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Growth Mechanism of a Hybrid Structure Consisting of a Graphite Layer on Top of Vertical Carbon Nanotubes

Journal of nanomaterials, 2012-01, Vol.2012, p.1-10

2012

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A global model for SF6 plasmas coupling reaction kinetics in the gas phase and on the surface of the reactor walls

Journal of physics. D, Applied physics, 2009-03, Vol.42 (5), p.055209-055209 (15)

2009

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Balancing ion parameters and fluorocarbon chemical reactants for SiO2 pattern transfer control using fluorocarbon-based atomic layer etching

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-09, Vol.37 (5)

2019

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The effect of scale and interfacial tension on liquid–liquid dispersion in in-line Silverson rotor–stator mixers

Chemical engineering research & design, 2013-11, Vol.91 (11), p.2156-2168

2013

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Specific features of power characteristics of in-line rotor–stator mixers

Chemical engineering and processing, 2015-05, Vol.91, p.43-56

2015

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A global model for C4F8 plasmas coupling gas phase and wall surface reaction kinetics

Journal of physics. D, Applied physics, 2008-10, Vol.41 (19), p.195211-195211 (12)

2008

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Balancing ion parameters and fluorocarbon chemical reactants for SiO 2 pattern transfer control using fluorocarbon-based atomic layer etching

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-09, Vol.37 (5)

2019

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Balancing ion parameters and fluorocarbon chemical reactants for SiO 2 pattern transfer control using fluorocarbon-based atomic layer etching

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-09, Vol.37 (5)

2019

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A Raman metrology approach to quality control of 2D MoS 2 film fabrication

Journal of physics. D, Applied physics, 2017-05, Vol.50 (18), p.184005

2017

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Inverted hollow spinning cone as a device for controlling foam and hold-up in pilot scale gassed agitated fermentation vessels

Chemical engineering science, 2005-04, Vol.60 (8), p.2231-2238

2005

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Charging effect simulation model used in simulations of plasma etching of silicon

Mitigation of plasma-induced damage in porous low-k dielectrics by cryogenic precursor condensation

Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask

Dispersion of silicone oil in water surfactant solution: Effect of impeller speed, oil viscosity and addition point on drop size distribution

Is Technological Change Threatening the Very Existence of “Traditional” Survey Research and, if So, What should we do about it?

Atomic layer etching in close-to-conventional plasma etch tools

Viewpoint: 'Is technological change threatening the very existence of "traditional" survey research and, if so, what should we do about it?'

Modelling the oxidation of seventeen volatile organic compounds to track yields of CO and CO2

A Fully Automated High-Throughput Flow Cytometry Screening System Enabling Phenotypic Drug Discovery

Web 2.0, Social Networks and the Future of Market Research

Fabrication and properties of etched GaN nanorods

Advantages of the hollow (concave) turbine for multi-phase agitation under intense operating conditions

High yield growth of vertically aligned carbon nanostructure through low frequency induced plasma enhanced chemical vapour deposition

A Raman metrology approach to quality control of 2D MoS2 film fabrication

Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self‐limiting process for aspect ratio independent etching

Growth Mechanism of a Hybrid Structure Consisting of a Graphite Layer on Top of Vertical Carbon Nanotubes

A global model for SF6 plasmas coupling reaction kinetics in the gas phase and on the surface of the reactor walls

Balancing ion parameters and fluorocarbon chemical reactants for SiO2 pattern transfer control using fluorocarbon-based atomic layer etching

The effect of scale and interfacial tension on liquid–liquid dispersion in in-line Silverson rotor–stator mixers

Specific features of power characteristics of in-line rotor–stator mixers

A global model for C4F8 plasmas coupling gas phase and wall surface reaction kinetics

Balancing ion parameters and fluorocarbon chemical reactants for SiO 2 pattern transfer control using fluorocarbon-based atomic layer etching

Balancing ion parameters and fluorocarbon chemical reactants for SiO 2 pattern transfer control using fluorocarbon-based atomic layer etching

A Raman metrology approach to quality control of 2D MoS 2 film fabrication

Inverted hollow spinning cone as a device for controlling foam and hold-up in pilot scale gassed agitated fermentation vessels

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