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Photoemission in microelectronic research: When technological developments allow to tackle new questions in the lab

EPJ Web of conferences, 2022, Vol.273, p.1011

2022

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Organic and perovskite solar cells for space applications

Solar energy materials and solar cells, 2018-08, Vol.182, p.121-127

2018

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Mean Free Path of Electrons in Organic Photoresists for Extreme Ultraviolet Lithography in the Kinetic Energy Range 20–450 eV

ACS applied materials & interfaces, 2023-07, Vol.15 (29), p.35483-35494

2023

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Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S

Chemistry of materials, 2017-04, Vol.29 (7), p.2927-2938

2017

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Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism

Chemistry of materials, 2018-11, Vol.30 (21), p.7648-7663

2018

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Evaluation of the electrical contact area in contact-mode scanning probe microscopy

Journal of applied physics, 2015-06, Vol.117 (21)

2015

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Effective electrical passivation of Ge(100) for high- k gate dielectric layers using germanium oxide

Applied physics letters, 2007-08, Vol.91 (8), p.082904-082904-3

2007

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Transition metal contacts to graphene

Applied physics letters, 2015-10, Vol.107 (15)

2015

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Spin-on-diffussants for doping in transition metal dichalcogenide semiconductors

Applied physics letters, 2019-05, Vol.114 (21)

2019

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Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn

ACS applied materials & interfaces, 2016-06, Vol.8 (21), p.13181-13186

2016

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Nanoscale electrochemical response of lithium-ion cathodes: a combined study using C-AFM and SIMS

Beilstein journal of nanotechnology, 2018, Vol.9 (1), p.1623-1628

2018

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Understanding Physico-Chemical Aspects in the Depth Profiling of Polymer:Fullerene Layers

Journal of physical chemistry. C, 2016-12, Vol.120 (49), p.28074-28082

2016

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Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide

Chemistry of materials, 2013-04, Vol.25 (7), p.1078-1091

2013

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The conversion mechanism of amorphous silicon to stoichiometric WS2

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (15), p.4122-413

2018

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Atomic layer deposition of hafnium oxide on germanium substrates

Journal of applied physics, 2005-03, Vol.97 (6), p.064104-064104-10

2005

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Impact of SiO2 surface composition on trimethylsilane passivation for area-selective deposition

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019, Vol.7 (38), p.11911-11918

2019

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Influence of elastic scattering of photoelectrons on angle-resolved x-ray photoelectron spectroscopy

Applied physics letters, 2007-09, Vol.91 (10), p.104106-104106-3

2007

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Self-assembled monolayers as inhibitors for area-selective deposition: A novel approach towards resist-less EUV lithography

Applied surface science, 2022-12, Vol.606, p.154657, Article 154657

2022

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Mixed Functional Siloxane Monolayers Prepared via Chemical Vapor Deposition

Langmuir, 2024-09, Vol.40 (37), p.19731-19738

2024

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Achieving reproducible data: Examples from surface analysis in semiconductor technology

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-05, Vol.38 (3)

2020

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Analysis of Ultra-Thin HfO2/SiON/Si(001): Comparison of Three Different Techniques

Analytical Sciences, 2010/02/10, Vol.26(2), pp.223-226

2010

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A Correlative ToF-SIMS/SPM Methodology for Probing 3D Devices

Analytical chemistry (Washington), 2020-08, Vol.92 (16), p.11413-11419

2020

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Characterization of Porous Structures in Advanced Low-$k$ Films with Thin TaN Layers Using Monoenergetic Positron Beams

Japanese Journal of Applied Physics, 2013-10, Vol.52 (10), p.106501-106501-5

2013

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Interfacial control of SrTiO3/Si(001) epitaxy and its effect on physical and optical properties

Journal of crystal growth, 2022-03, Vol.582, p.126524, Article 126524

2022

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Material-Selective Doping of 2D TMDC through AlxOy Encapsulation

ACS applied materials & interfaces, 2019-11, Vol.11 (45), p.42697-42707

2019

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Photoemission in microelectronic research: When technological developments allow to tackle new questions in the lab

Organic and perovskite solar cells for space applications

Mean Free Path of Electrons in Organic Photoresists for Extreme Ultraviolet Lithography in the Kinetic Energy Range 20–450 eV

Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S

Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism

Evaluation of the electrical contact area in contact-mode scanning probe microscopy

Effective electrical passivation of Ge(100) for high- k gate dielectric layers using germanium oxide

Transition metal contacts to graphene

Spin-on-diffussants for doping in transition metal dichalcogenide semiconductors

Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn

Nanoscale electrochemical response of lithium-ion cathodes: a combined study using C-AFM and SIMS

Understanding Physico-Chemical Aspects in the Depth Profiling of Polymer:Fullerene Layers

Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide

The conversion mechanism of amorphous silicon to stoichiometric WS2

Atomic layer deposition of hafnium oxide on germanium substrates

Impact of SiO2 surface composition on trimethylsilane passivation for area-selective deposition

Influence of elastic scattering of photoelectrons on angle-resolved x-ray photoelectron spectroscopy

Self-assembled monolayers as inhibitors for area-selective deposition: A novel approach towards resist-less EUV lithography

Mixed Functional Siloxane Monolayers Prepared via Chemical Vapor Deposition

Achieving reproducible data: Examples from surface analysis in semiconductor technology

Analysis of Ultra-Thin HfO2/SiON/Si(001): Comparison of Three Different Techniques

A Correlative ToF-SIMS/SPM Methodology for Probing 3D Devices

Characterization of Porous Structures in Advanced Low-$k$ Films with Thin TaN Layers Using Monoenergetic Positron Beams

Interfacial control of SrTiO3/Si(001) epitaxy and its effect on physical and optical properties

Material-Selective Doping of 2D TMDC through AlxOy Encapsulation

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