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Si/SiGe epitaxial-base transistors - Part I: Materials, physics, and circuits

IEEE transactions on electron devices, 1995-01, Vol.42 (3), p.455-468

1995

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Si/SiGe epitaxial-base transistors - Part II: Process integration and analog applications

IEEE transactions on electron devices, 1995-01, Vol.42 (3), p.469-482

1995

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A room temperature 0.1 μm CMOS on SOI

IEEE transactions on electron devices, 1994-12, Vol.41 (12), p.2405-2412

1994

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An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation

IEEE electron device letters, 1994-11, Vol.15 (11), p.472-474

1994

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The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition

Journal of applied physics, 1991-08, Vol.70 (3), p.1416-1420

1991

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73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

IEEE electron device letters, 1992-05, Vol.13 (5), p.259-261

1992

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75-GHz fT SiGe-base heterojunction bipolar transistors

IEEE electron device letters, 1990-04, Vol.11 (4), p.171-173

1990

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High-low polysilicon-emitter SiGe-base bipolar transistors

IEEE electron device letters, 1993-10, Vol.14 (10), p.478-480

1993

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Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II: Epitaxial quality

Journal of applied physics, 1987-10, Vol.62 (8), p.3398-3404

1987

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Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors

IEEE electron device letters, 1991-04, Vol.12 (4), p.166-168

1991

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Bipolar transistor fabrication in low-temperature (745°C) ultra-low-pressure chemical-vapor-deposited epitaxial silicon

IEEE electron device letters, 1987-04, Vol.8 (4), p.168-170

1987

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Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology

IEEE electron device letters, 1990-07, Vol.11 (7), p.288-290

1990

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The implementation of a reduced-field profile design for high-performance bipolar transistors

IEEE electron device letters, 1990-08, Vol.11 (8), p.336-338

1990

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Partial-SOI isolation structure for reduced bipolar transistor parasitics

IEEE electron device letters, 1992-08, Vol.13 (8), p.424-426

1992

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On the leverage of high-fT transistors for advanced high-speed bipolar circuits

IEEE journal of solid-state circuits, 1992-02, Vol.27 (2), p.225-228

1992

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Cross-sectional TEM characterization of low temperature (750-800°C) epitaxial silicon by very low pressure (6 mTorr) chemical vapor deposition with and without plasma enhancement

Journal of electronic materials, 1988-03, Vol.17 (2), p.139-148

1988

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Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique

ESSDERC '92: 22nd European Solid State Device Research conference, 1992, Vol.19 (1), p.531-534

1992

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Current gain rolloff in graded-base SiGe heterojunction bipolar transistors

IEEE electron device letters, 1993-04, Vol.14 (4), p.193-195

1993

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Low temperature Si2H6 si epitaxy in-situ doped with AsH3/SiH4

Journal of electronic materials, 1990-12, Vol.19 (12), p.1395-1402

1990

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On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues

IEEE transactions on electron devices, 1993-03, Vol.40 (3), p.542-556

1993

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Plasma-enhanced deposition of high-quality epitaxial silicon at low temperatures

Applied physics letters, 1987-12, Vol.51 (24), p.2016-2018

1987

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MEASUREMENT OF PION CHARGE EXCHANGE IN THE REGION OF THE S 11 (1535) RESONANCE

International journal of modern physics. A, Particles and fields, gravitation, cosmology, 2005-04, Vol.20 (8n09), p.1822-1825

2005

Volltextzugriff (PDF)

Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial base

Microelectronic engineering, 1991-10, Vol.15 (1-4), p.11-14

1991

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Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial silicon deposition. I: Process considerations

Journal of applied physics, 1987-10, Vol.62 (8), p.3388-3397

1987

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Plasma-enhanced chemical vapor deposition of in situ doped epitaxial silicon at low temperatures. I: Arsenic doping

Journal of applied physics, 1989, Vol.65 (3), p.1053-1066

1989

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Si/SiGe epitaxial-base transistors - Part I: Materials, physics, and circuits

Si/SiGe epitaxial-base transistors - Part II: Process integration and analog applications

A room temperature 0.1 μm CMOS on SOI

An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation

The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition

73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

75-GHz fT SiGe-base heterojunction bipolar transistors

High-low polysilicon-emitter SiGe-base bipolar transistors

Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II: Epitaxial quality

Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors

Bipolar transistor fabrication in low-temperature (745°C) ultra-low-pressure chemical-vapor-deposited epitaxial silicon

Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology

The implementation of a reduced-field profile design for high-performance bipolar transistors

Partial-SOI isolation structure for reduced bipolar transistor parasitics

On the leverage of high-fT transistors for advanced high-speed bipolar circuits

Cross-sectional TEM characterization of low temperature (750-800°C) epitaxial silicon by very low pressure (6 mTorr) chemical vapor deposition with and without plasma enhancement

Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique

Current gain rolloff in graded-base SiGe heterojunction bipolar transistors

Low temperature Si2H6 si epitaxy in-situ doped with AsH3/SiH4

On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues

Plasma-enhanced deposition of high-quality epitaxial silicon at low temperatures

MEASUREMENT OF PION CHARGE EXCHANGE IN THE REGION OF THE S 11 (1535) RESONANCE

Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial base

Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial silicon deposition. I: Process considerations

Plasma-enhanced chemical vapor deposition of in situ doped epitaxial silicon at low temperatures. I: Arsenic doping

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