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Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.437-441

2006

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Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

Journal of applied physics, 2003-12, Vol.94 (12), p.7520-7525

2003

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Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-02, Vol.216 (1-4), p.173-177

2004

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Millisecond non-melt laser annealing of phosphorus implanted germanium: Influence of nitrogen co-doping

Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Mechanisms of B deactivation control by F co-implantation

Extended defects in shallow implants

Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth

Formation energies and relative stability of perfect and faulted dislocation loops in silicon

Benefits of cryo-implantation for 28 nm NMOS advanced junction formation

Suppressing Device Variability by Cryogenic Implant for 28-nm Low-Power SoC Applications

Predictive Simulation of Advanced Nano-CMOS Devices Based on kMC Process Simulation

Integration Benefits of Carborane Molecular Implant for State-of-the-Art 28-nm Logic pFET Device Manufacturing

Vacancy-engineering implants for high boron activation in silicon on insulator

The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions

Ion beam induced defects in crystalline silicon

Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon

Modelling of the chemical-pump effect and C clustering

Vacancy engineering by optimized laser irradiation in boron-implanted, preamorphized silicon substrate

Kinetic study of group IV nanoparticles ion beam synthesized in SiO2

Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

Differential Hall profiling of ultra-shallow junctions in Si and SOI

Direct evidence of the recombination of silicon interstitial atoms at the silicon surface

Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stability

Effect of fluorine on the activation and diffusion behavior of boron implanted preamorphized silicon

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution

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