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Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.507-509

2006

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Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-05, Vol.20 (3), p.974-983

2002

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Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship

Applied physics letters, 2004-10, Vol.85 (15), p.3074-3076

2004

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Boron deactivation in preamorphized silicon on insulator: Efficiencyof the buried oxide as an interstitial sink

Applied physics letters, 2007-08, Vol.91 (9), p.092122-092122-3

2007

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Effect of amorphization and carbon co-doping on activation and diffusionof boron in silicon

Applied physics letters, 2006-08, Vol.89 (6), p.062110-062110-3

2006

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The time evolution of the ion density and the gas temperature in pulsed radio frequency plasmas

Journal of applied physics, 1992-06, Vol.71 (12), p.5792-5798

1992

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Advanced front-end processes for the 45 nm CMOS technology node

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114, p.118-129

2004

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Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJ

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124-125, p.215-218

2005

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Effect of buried Si∕SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.442-445

2006

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Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si ∕ Si O 2 interface

Applied physics letters, 2006-07, Vol.89 (4), p.042111-042111-3

2006

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Reaction kinetics of CH radical during etching of polymers in argon and oxygen rf plasmas

Journal of applied physics, 1992-06, Vol.71 (12), p.5799-5805

1992

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Vacancy-engineering implants for high boron activation in siliconon insulator

Applied physics letters, 2006-02, Vol.88 (8), p.082112-082112-3

2006

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Elemental B distributions and clustering in low-energy B+ ion-implanted Si

Applied physics letters, 2000-11, Vol.77 (22), p.3586-3588

2000

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Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

Excitation mechanisms of oxygen atoms in a low pressure O2 radio-frequency plasma

Suppression of phosphorus diffusion by carbon co-implantation

Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants

Ion-induced etching of organic polymers in argon and oxygen radio-frequency plasmas

Characterisation Of The Beam Plasma In High Current, Low Energy Ion Beams For Implanters

Co-Implantation for 45 nm PMOS and NMOS Source-Drain Extension Formation: Device Characterisation Down to 30 nm Physical Gate Length

Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator

Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

Vacancy-engineering implants for high boron activation in silicon on insulator

Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO2 interface

Co-implantation with conventional spike anneal solutions for 45 nm n -type metal-oxide-semiconductor ultra-shallow junction formation

Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship

Boron deactivation in preamorphized silicon on insulator: Efficiencyof the buried oxide as an interstitial sink

Effect of amorphization and carbon co-doping on activation and diffusionof boron in silicon

The time evolution of the ion density and the gas temperature in pulsed radio frequency plasmas

Advanced front-end processes for the 45 nm CMOS technology node

Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJ

Effect of buried Si∕SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction

Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si ∕ Si O 2 interface

Reaction kinetics of CH radical during etching of polymers in argon and oxygen rf plasmas

Vacancy-engineering implants for high boron activation in siliconon insulator

Elemental B distributions and clustering in low-energy B+ ion-implanted Si

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