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Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

Applied physics letters, 2006-08, Vol.89 (6)

2006

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Suppression of phosphorus diffusion by carbon co-implantation

Applied physics letters, 2006-08, Vol.89 (6), p.062102-062102-3

2006

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Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

Applied physics letters, 2007-08, Vol.91 (9)

2007

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Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

Journal of applied physics, 2007-11, Vol.102 (10), p.103707-103707-6

2007

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Vacancy-engineering implants for high boron activation in silicon on insulator

Applied physics letters, 2006-02, Vol.88 (8)

2006

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Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO2 interface

Applied physics letters, 2006-07, Vol.89 (4)

2006

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Co-implantation with conventional spike anneal solutions for 45 nm n -type metal-oxide-semiconductor ultra-shallow junction formation

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.507-509

2006

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Damage accumulation and dopant migration during shallow As and Sb implantation into Si

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-02, Vol.216, p.67-74

2004

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Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-05, Vol.20 (3), p.974-983

2002

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Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship

Applied physics letters, 2004-10, Vol.85 (15), p.3074-3076

2004

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5667 PULMONARY CONGESTION IN HEMODIALYSIS: PREVALENCE, DYNAMICS AND ASSOCIATED FACTORS

Nephrology, dialysis, transplantation, 2023-06, Vol.38 (Supplement_1)

2023

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Effect of buried Si∕SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.442-445

2006

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Suppression of boron interstitial clusters in SOI using vacancy engineering

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.210-214

2005

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Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJ

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124-125, p.215-218

2005

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Advanced front-end processes for the 45 nm CMOS technology node

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114, p.118-129

2004

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Electrical Characterization of Ultrashallow Dopant Profiles

Journal of the Electrochemical Society, 2000-09, Vol.147 (9), p.3569

2000

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Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants

Ion Implantation Technology, 2006, Vol.866, p.84-87

2006

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Elemental B distributions and clustering in low-energy B+ ion-implanted Si

Applied physics letters, 2000-11, Vol.77 (22), p.3586-3588

2000

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Survival of patients treated with extended-hours haemodialysis in Europe: an analysis of the ERA-EDTA Registry

Nephrology, dialysis, transplantation, 2020-03, Vol.35 (3), p.488-495

2020

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Quantitative analysis of the top 5 nm of boron ultra-shallow implants

Applied surface science, 2003-01, Vol.203, p.851-854

2003

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On the role of atomic oxygen in the etching of organic polymers in a radio-frequency oxygen discharge

Journal of applied physics, 1995-07, Vol.78 (1), p.47-54

1995

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Co-Implantation for 45 nm PMOS and NMOS Source-Drain Extension Formation: Device Characterisation Down to 30 nm Physical Gate Length

Ion Implantation Technology, 2006, Vol.866, p.37-40

2006

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Ion-induced etching of organic polymers in argon and oxygen radio-frequency plasmas

Journal of applied physics, 1994-01, Vol.75 (2), p.758-769

1994

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Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator

Ion Implantation Technology, 2006, Vol.866, p.73-75

2006

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Characterisation Of The Beam Plasma In High Current, Low Energy Ion Beams For Implanters

AIP conference proceedings, 2006, Vol.866 (1), p.340-344

2006

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Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

Suppression of phosphorus diffusion by carbon co-implantation

Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

Vacancy-engineering implants for high boron activation in silicon on insulator

Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO2 interface

Co-implantation with conventional spike anneal solutions for 45 nm n -type metal-oxide-semiconductor ultra-shallow junction formation

Damage accumulation and dopant migration during shallow As and Sb implantation into Si

Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship

5667 PULMONARY CONGESTION IN HEMODIALYSIS: PREVALENCE, DYNAMICS AND ASSOCIATED FACTORS

Effect of buried Si∕SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction

Suppression of boron interstitial clusters in SOI using vacancy engineering

Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJ

Advanced front-end processes for the 45 nm CMOS technology node

Electrical Characterization of Ultrashallow Dopant Profiles

Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants

Elemental B distributions and clustering in low-energy B+ ion-implanted Si

Survival of patients treated with extended-hours haemodialysis in Europe: an analysis of the ERA-EDTA Registry

Quantitative analysis of the top 5 nm of boron ultra-shallow implants

On the role of atomic oxygen in the etching of organic polymers in a radio-frequency oxygen discharge

Co-Implantation for 45 nm PMOS and NMOS Source-Drain Extension Formation: Device Characterisation Down to 30 nm Physical Gate Length

Ion-induced etching of organic polymers in argon and oxygen radio-frequency plasmas

Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator

Characterisation Of The Beam Plasma In High Current, Low Energy Ion Beams For Implanters

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