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Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs

IEEE electron device letters, 2010-09, Vol.31 (9), p.903-905

2010

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Pulmonary Toxicity, Distribution, and Clearance of Intratracheally Instilled Silicon Nanowires in Rats

Journal of nanomaterials, 2012-01, Vol.2012 (2012), p.1-17

2012

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Low RESET Current Mushroom‐Cell Phase‐Change Memory Using Fiber‐Textured Homostructure GeSbTe on Highly Oriented Seed Layer

Physica status solidi. PSS-RRL. Rapid research letters, 2024-10, Vol.18 (10), p.n/a

2024

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Generation of Reactive Oxygen Species from Silicon Nanowires

Environmental Health Insights, 2014-01, Vol.2014 (S1), p.21-29

2014

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Multiple Double Cross-Section Transmission Electron Microscope Sample Preparation of Specific Sub-10 nm Diameter Si Nanowire Devices

Microscopy and microanalysis, 2011-12, Vol.17 (6), p.889-895

2011

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Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.2813-2819

2008

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Atomic layer epitaxy of InAs with high silicon doping concentration

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-09, Vol.38 (5)

2020

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Optical constants of In0.53Ga0.47As/InP: Experiment and modeling

Journal of applied physics, 2002-11, Vol.92 (10), p.5878-5885

2002

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Ion implantation of Carbon and Silicon into Ge 2 Sb 2 Te 5 : Ion Profiles and Post Crystallization Redistribution

MRS proceedings, 2011, Vol.1338, Article mrss11-1338-r05-07

2011

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Ion implantation of Carbon and Silicon into Ge2Sb2Te5: Ion Profiles and Post Crystallization Redistribution

MRS proceedings, 2011, Vol.1338 (1)

2011

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Properties of Phase Change Materials Modified by Ion Implantation

MRS proceedings, 2011, Vol.1338 (1), Article mrss11-1338-r05-06

2011

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Generation of Reactive Oxygen Species from Silicon Nanowires

Environmental health insights, 2014-09, Vol.8 (s1)

2014

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Amorphization of Crystalline Phase Change Material by Ion Implantation

MRS proceedings, 2010, Vol.1251 (1), Article 1251-H02-06

2010

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Generation of Reactive Oxygen Species from Silicon Nanowires

Environmental health insights, 2014-01, Vol.8s1

2014

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Generation of Reactive Oxygen Species from Silicon Nanowires

Environmental health insights, 2014-01, Vol.Suppl. 1 (Suppl. 1), p.21

2014

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Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

IEEE transactions on nanotechnology, 2008, Vol.7 (6)

2008

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CD-SEM metrology evaluation of gate-all-around Si nanowire MOSFET with improved control of nanowire suspension by using a buried boron nitride etch-stop layer

25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014), 2014, p.248-251

2014

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Guest Editorial Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

IEEE transactions on nanotechnology, 2008-11, Vol.7 (6), p.643-650

2008

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Enabling technologies for wafer-level bonding of 3D MEMS and integrated circuit structures

2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546), 2004, Vol.1, p.931-938 Vol.1

2004

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Guest Editorial Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

IEEE transactions on nanotechnology, 2008, Vol.7 (6), p.643

2008

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Planification Hiérarchisée de la Production: Agrégation du Temps et Cohérence

11th International Conference on Analysis and Optimization of Systems Discrete Event Systems, 2005, p.600-608

2005

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Room-temperature carrier transport in high-performance short-channel Silicon nanowire MOSFETs

2012 International Electron Devices Meeting, 2012, p.8.3.1-8.3.4

2012

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Package design and measurement of 10 Gbps laser diode on high-speed silicon optical bench

Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710), 2003, p.63-66

2003

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Burstein-Moss shift of n-doped In{sub 0.53}Ga{sub 0.47}As/InP

Physical review. B, Condensed matter, 2001-06, Vol.63 (23)

2001

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Burstein-Moss shift of n -doped In 0.53 Ga 0.47 A s / I n P

Physical review. B, Condensed matter, 2001-05, Vol.63 (23), Article 233302

2001

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Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs

Pulmonary Toxicity, Distribution, and Clearance of Intratracheally Instilled Silicon Nanowires in Rats

Low RESET Current Mushroom‐Cell Phase‐Change Memory Using Fiber‐Textured Homostructure GeSbTe on Highly Oriented Seed Layer

Generation of Reactive Oxygen Species from Silicon Nanowires

Multiple Double Cross-Section Transmission Electron Microscope Sample Preparation of Specific Sub-10 nm Diameter Si Nanowire Devices

Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

Atomic layer epitaxy of InAs with high silicon doping concentration

Optical constants of In0.53Ga0.47As/InP: Experiment and modeling

Ion implantation of Carbon and Silicon into Ge 2 Sb 2 Te 5 : Ion Profiles and Post Crystallization Redistribution

Ion implantation of Carbon and Silicon into Ge2Sb2Te5: Ion Profiles and Post Crystallization Redistribution

Properties of Phase Change Materials Modified by Ion Implantation

Generation of Reactive Oxygen Species from Silicon Nanowires

Amorphization of Crystalline Phase Change Material by Ion Implantation

Generation of Reactive Oxygen Species from Silicon Nanowires

Generation of Reactive Oxygen Species from Silicon Nanowires

Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

CD-SEM metrology evaluation of gate-all-around Si nanowire MOSFET with improved control of nanowire suspension by using a buried boron nitride etch-stop layer

Guest Editorial Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

Enabling technologies for wafer-level bonding of 3D MEMS and integrated circuit structures

Guest Editorial Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

Planification Hiérarchisée de la Production: Agrégation du Temps et Cohérence

Room-temperature carrier transport in high-performance short-channel Silicon nanowire MOSFETs

Package design and measurement of 10 Gbps laser diode on high-speed silicon optical bench

Burstein-Moss shift of n-doped In{sub 0.53}Ga{sub 0.47}As/InP

Burstein-Moss shift of n -doped In 0.53 Ga 0.47 A s / I n P

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