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Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon

Journal of applied physics, 2018-04, Vol.123 (16), p.161556-161559

2018

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A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon

Microelectronic engineering, 2018-04, Vol.190, p.54-56

2018

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Colloidal and polymeric contributions to the yielding of dense microgel suspensions

Journal of colloid and interface science, 2021-04, Vol.587, p.437-445

2021

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Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride

Physical review letters, 2023-09, Vol.131 (12), p.126901-126901, Article 126901

2023

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Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Journal of applied physics, 2016-04, Vol.119 (13), p.135308-245301

2016

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Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy

Journal of applied physics, 2015-12, Vol.118 (24), p.245301-135308

2015

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Defect engineered blue photoluminescence in ZnO:Al/TiO2 heterostructures

Journal of applied physics, 2022-08, Vol.132 (6)

2022

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Amorphization kinetics of germanium during ion implantation

Journal of applied physics, 2009-01, Vol.105 (1), p.013528-013528-5

2009

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Annealing temperature-driven near-surface crystallization with improved luminescence in self‐patterned alumina films

Journal of materials science. Materials in electronics, 2021-05, Vol.32 (9), p.11709-11718

2021

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Amorphization, recrystallization and end of range defects in germanium

Thin solid films, 2010-02, Vol.518 (9), p.2307-2313

2010

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Modelling of point defect complex formation and its application to H+ ion implanted silicon

Acta materialia, 2015-10, Vol.99, p.187-195

2015

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Spallation generated by femtosecond laser driven shocks in thin metallic targets

Journal of physics. D, Applied physics, 2009-03, Vol.42 (6), p.065402-065402 (10)

2009

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Correction to: Annealing temperature-driven near-surface crystallization with improved luminescence in self‐patterned alumina films

Journal of materials science. Materials in electronics, 2021-05, Vol.32 (10), p.14119-14120

2021

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Probing the impact of energetic argon ions on the structural properties of ZnO:Al/TiO2 heterostructures

Journal of applied physics, 2018-10, Vol.124 (15)

2018

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Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2

Journal of applied physics, 2002-01, Vol.91 (2), p.798-807

2002

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Experimental and theoretical evidence of ion engineering in nanocrystalline molybdenum disulfide memristors for non-filamentary switching actions and ultra-low-voltage synaptic features

Journal of materials chemistry. C, Materials for optical and electronic devices, 2023-06, Vol.11 (23), p.7782-7792

2023

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Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

Journal of applied physics, 2008-01, Vol.103 (2), p.023508-023508-9

2008

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End of range defects in Ge

Journal of applied physics, 2009-06, Vol.105 (12), p.126110-126110-3

2009

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A New Route for the Synthesis of Ammonium Thiotungstate, a Catalyst Precursor

Catalysis letters, 2017-06, Vol.147 (6), p.1339-1346

2017

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Energetics of Self-Interstitial Clusters in Si

Physical review letters, 1999-05, Vol.82 (22), p.4460-4463

1999

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Stress measurements of germanium nanocrystals embedded in silicon oxide

Journal of applied physics, 2003-11, Vol.94 (9), p.5639-5642

2003

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Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation

Journal of applied physics, 2004-05, Vol.95 (10), p.5696-5702

2004

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Synthesis and characterization of four- and six-arm star-shaped poly(ε-caprolactone)-b-poly(N-vinylcaprolactam): Micellar and core degradation studies

Reactive & functional polymers, 2015-03, Vol.88, p.16-23

2015

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Ostwald ripening of end-of-range defects in silicon

Journal of applied physics, 1998-03, Vol.83 (6), p.3008-3017

1998

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Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

Journal of applied physics, 2006-02, Vol.99 (4)

2006

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Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon

A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon

Colloidal and polymeric contributions to the yielding of dense microgel suspensions

Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride

Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy

Defect engineered blue photoluminescence in ZnO:Al/TiO2 heterostructures

Amorphization kinetics of germanium during ion implantation

Annealing temperature-driven near-surface crystallization with improved luminescence in self‐patterned alumina films

Amorphization, recrystallization and end of range defects in germanium

Modelling of point defect complex formation and its application to H+ ion implanted silicon

Spallation generated by femtosecond laser driven shocks in thin metallic targets

Correction to: Annealing temperature-driven near-surface crystallization with improved luminescence in self‐patterned alumina films

Probing the impact of energetic argon ions on the structural properties of ZnO:Al/TiO2 heterostructures

Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2

Experimental and theoretical evidence of ion engineering in nanocrystalline molybdenum disulfide memristors for non-filamentary switching actions and ultra-low-voltage synaptic features

Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

End of range defects in Ge

A New Route for the Synthesis of Ammonium Thiotungstate, a Catalyst Precursor

Energetics of Self-Interstitial Clusters in Si

Stress measurements of germanium nanocrystals embedded in silicon oxide

Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation

Synthesis and characterization of four- and six-arm star-shaped poly(ε-caprolactone)-b-poly(N-vinylcaprolactam): Micellar and core degradation studies

Ostwald ripening of end-of-range defects in silicon

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

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