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TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.210-218

2019

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Coastal changes between the harbours of Castellón and Sagunto (Spain) from the mid-twentieth century to present

Regional studies in marine science, 2021-07, Vol.46, p.101905, Article 101905

2021

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Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy

AIP advances, 2017-09, Vol.7 (9), p.095214-095214-15

2017

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An Energy-Efficient Tensile-Strained Ge/InGaAs TFET 7T SRAM Cell Architecture for Ultralow-Voltage Applications

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2193-2200

2017

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Structural and optical properties of sulfur passivated epitaxial step-graded GaAs1-ySby materials

AIP advances, 2018-11, Vol.8 (11), p.115119-115119-18

2018

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Estimation of biases and uncertainties on PWR nuclide inventories for severe accidents analyses

Frontiers in energy research, 2023-01, Vol.11 (1033306)

2023

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Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on InxAl1–xAs Stressors

ACS omega, 2022-02, Vol.7 (7), p.5946-5953

2022

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High carrier lifetimes in epitaxial germanium-tin/Al(In)As heterostructures with variable tin compositions

Journal of materials chemistry. C, Materials for optical and electronic devices, 2022-07, Vol.1 (29), p.153-154

2022

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The distribution of tritium in the terrestrial and aquatic environments of the Creys-Malville nuclear power plant (2002–2005)

Journal of environmental radioactivity, 2007-05, Vol.94 (2), p.107-118

2007

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Metal work function engineering on epitaxial (100)Ge and (110)Ge metal-oxide-semiconductor devices

Microelectronic engineering, 2018-11, Vol.199, p.80-86

2018

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Atomic layer deposited tantalum silicate on crystallographically-oriented epitaxial germanium: interface chemistry and band alignment

Materials advances, 2022-06, Vol.3 (12), p.51-511

2022

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Performance Evaluation of Novel Strain-Engineered Ge-InGaAs Heterojunction Tunnel Field-Effect Transistors

IEEE transactions on electron devices, 2015-10, Vol.62 (10), p.3223-3228, Article 3223

2015

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In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process

ACS omega, 2018-11, Vol.3 (11), p.14567-14574

2018

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Electronic and optical properties of highly boron-doped epitaxial Ge/AlAs(001) heterostructures

Journal of applied physics, 2020-02, Vol.127 (7)

2020

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Device Characterization of a Sulfur-Implanted p ^/p GaSb Photovoltaic Camel Diode

IEEE journal of photovoltaics, 2020-11, Vol.10 (6), p.1675-1680

2020

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Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure

ACS applied electronic materials, 2021-10, Vol.3 (10), p.4535-4547

2021

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Molecular Detection of Bartonella henselae DNA in the Dental Pulp of 800-Year-Old French Cats

Clinical infectious diseases, 2004-11, Vol.39 (9), p.1391-1394

2004

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Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

Journal of applied physics, 2016-06, Vol.119 (24)

2016

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Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on In x Al 1- x As Stressors

ACS omega, 2022-02, Vol.7 (7), p.5946-5953

2022

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Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies

Physical review. B, 2018-05, Vol.97 (19), Article 195304

2018

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Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry

ACS applied electronic materials, 2019-12, Vol.1 (12), p.2646-2654

2019

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In Situ SiO 2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO x Atomic Layer Deposition Process

ACS omega, 2018-11, Vol.3 (11), p.14567-14574

2018

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Chromosomal abnormalities in women with breast cancer after autologous stem cell transplantation are infrequent and may not predict development of therapy-related leukemia or myelodysplastic syndrome

Bone marrow transplantation (Basingstoke), 2000-06, Vol.25 (11), p.1203-1208

2000

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Band Offset Enhancement of a-Al2O3/Tensile-Ge for High Mobility Nanoscale pMOS Devices

IEEE electron device letters, 2017-09, Vol.38 (9), p.1196-1199

2017

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Band Offset Enhancement of a-Al 2 O 3 /Tensile-Ge for High Mobility Nanoscale pMOS Devices

IEEE electron device letters, 2017-09, Vol.38 (9), p.1196-1199

2017

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TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications

Coastal changes between the harbours of Castellón and Sagunto (Spain) from the mid-twentieth century to present

Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy

An Energy-Efficient Tensile-Strained Ge/InGaAs TFET 7T SRAM Cell Architecture for Ultralow-Voltage Applications

Structural and optical properties of sulfur passivated epitaxial step-graded GaAs1-ySby materials

Estimation of biases and uncertainties on PWR nuclide inventories for severe accidents analyses

Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on InxAl1–xAs Stressors

High carrier lifetimes in epitaxial germanium-tin/Al(In)As heterostructures with variable tin compositions

The distribution of tritium in the terrestrial and aquatic environments of the Creys-Malville nuclear power plant (2002–2005)

Metal work function engineering on epitaxial (100)Ge and (110)Ge metal-oxide-semiconductor devices

Atomic layer deposited tantalum silicate on crystallographically-oriented epitaxial germanium: interface chemistry and band alignment

Performance Evaluation of Novel Strain-Engineered Ge-InGaAs Heterojunction Tunnel Field-Effect Transistors

In Situ SiO2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process

Electronic and optical properties of highly boron-doped epitaxial Ge/AlAs(001) heterostructures

Device Characterization of a Sulfur-Implanted p ^/p GaSb Photovoltaic Camel Diode

Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure

Molecular Detection of Bartonella henselae DNA in the Dental Pulp of 800-Year-Old French Cats

Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on In x Al 1- x As Stressors

Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies

Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry

In Situ SiO 2 Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO x Atomic Layer Deposition Process

Chromosomal abnormalities in women with breast cancer after autologous stem cell transplantation are infrequent and may not predict development of therapy-related leukemia or myelodysplastic syndrome

Band Offset Enhancement of a-Al2O3/Tensile-Ge for High Mobility Nanoscale pMOS Devices

Band Offset Enhancement of a-Al 2 O 3 /Tensile-Ge for High Mobility Nanoscale pMOS Devices

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