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Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

Nanoscale research letters, 2010-07, Vol.5 (10), p.1692-1697

2010

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Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

Physical review. B, Condensed matter and materials physics, 2005-05, Vol.71 (20), Article 205325

2005

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Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

Nanoscale research letters, 2009-11, Vol.5 (2), p.360-363

2009

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Photovoltaic properties of GaAsP core-shell nanowires on Si(001) substrate

Nanotechnology, 2012-07, Vol.23 (26), p.265402-265402

2012

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Miniband-related 1.4-1.8 μm luminescence of Ge/Si quantum dot superlattices

Nanoscale research letters, 2006-08, Vol.1 (2), p.137-153

2006

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Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

Nanoscale research letters, 2010-02, Vol.5 (2), p.360-363, Article 360

2010

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Growth of GaAs nanoscale whiskers by magnetron sputtering deposition

Journal of crystal growth, 2006-03, Vol.289 (1), p.31-36

2006

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The Effect of External Gaseous Environments on the Photoluminescence Intensity of Quantum-Dimensional Composite System

Journal of nanomaterials, 2015-01, Vol.2015 (2015), p.1-4

2015

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Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

Nanoscale research letters, 2010-07, Vol.5 (10), p.1692-1697

2010

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Influence of substrate temperature on the shape of GaAs nanowires grown by Au-assisted MOVPE

Journal of crystal growth, 2010-05, Vol.312 (10), p.1676-1682

2010

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Effect of growth kinetics on the structural and optical properties of quantum dot ensembles

Journal of crystal growth, 2004-06, Vol.267 (1), p.47-59

2004

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Room-temperature light emission from a highly strained Si/Ge superlattice

Applied physics letters, 2003-10, Vol.83 (15), p.3084-3086

2003

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Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

Nanoscale research letters, 2006-12, Vol.1 (2), p.137-153, Article 137

2006

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On the non-monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature

Physica Status Solidi (b), 2004-06, Vol.241 (7), p.R30-R33

2004

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Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy

Physical review. E, Statistical, nonlinear, and soft matter physics, 2006-02, Vol.73 (2 Pt 1), p.021603-021603, Article 021603

2006

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Atomic Structure of MBE-Grown GaAs Nanowhiskers

Physics of the solid state, 2005, Vol.47 (12), p.2213

Soshnikov, I. P.

2005

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The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy

Semiconductors (Woodbury, N.Y.), 2005-01, Vol.39 (5), p.557-564

2005

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ZnO thin films synthesis by RF magnetron sputtering deposition

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12054

2019

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GaSb/GaAs quantum dot systems: in situ synchrotron radiation x-ray photoelectron spectroscopy study

Nanotechnology, 2005-08, Vol.16 (8), p.1326-1334

2005

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Kinetic model of the growth of nanodimensional whiskers by the vapor-liquid-crystal mechanism

Technical physics letters, 2004-08, Vol.30 (8), p.682-686

2004

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Charge and spin storage in self-organized quantum dots

Applied physics letters, 2006-05, Vol.88 (18), p.182107-182107-3

2006

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Optical properties of InAs quantum dots in a Si matrix

Applied physics letters, 1999-03, Vol.74 (12), p.1701-1703

1999

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Kinetics of the initial stage of coherent island formation in heteroepitaxial systems

Physical review. B, Condensed matter, 2003-08, Vol.68 (7), Article 075409

2003

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Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6 μm

Physica status solidi. A, Applied research, 2003-07, Vol.198 (1), p.R4-R6

2003

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Stark effect in single and vertically coupled InAs/GaAs self-assembled quantum dots

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.1103-1107

2003

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Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

Photovoltaic properties of GaAsP core-shell nanowires on Si(001) substrate

Miniband-related 1.4-1.8 μm luminescence of Ge/Si quantum dot superlattices

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

Growth of GaAs nanoscale whiskers by magnetron sputtering deposition

The Effect of External Gaseous Environments on the Photoluminescence Intensity of Quantum-Dimensional Composite System

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

Influence of substrate temperature on the shape of GaAs nanowires grown by Au-assisted MOVPE

Effect of growth kinetics on the structural and optical properties of quantum dot ensembles

Room-temperature light emission from a highly strained Si/Ge superlattice

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

On the non-monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature

Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy

Atomic Structure of MBE-Grown GaAs Nanowhiskers

The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy

ZnO thin films synthesis by RF magnetron sputtering deposition

GaSb/GaAs quantum dot systems: in situ synchrotron radiation x-ray photoelectron spectroscopy study

Kinetic model of the growth of nanodimensional whiskers by the vapor-liquid-crystal mechanism

Charge and spin storage in self-organized quantum dots

Optical properties of InAs quantum dots in a Si matrix

Kinetics of the initial stage of coherent island formation in heteroepitaxial systems

Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6 μm

Stark effect in single and vertically coupled InAs/GaAs self-assembled quantum dots

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