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Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface

IEEE electron device letters, 1985-12, Vol.6 (12), p.645-647

1985

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FET Characterization using gated-TLM structure

IEEE transactions on electron devices, 1985-12, Vol.32 (12), p.2824-2829

1985

Volltextzugriff (PDF)

Self-aligned modulation-doped (Al,Ga)As/GaAs field-effect transistors

IEEE electron device letters, 1984-04, Vol.5 (4), p.129-131

1984

Volltextzugriff (PDF)

Ion-implanted P-channel GaAs MESFET using schottky barrier height tailoring

Electronics letters, 1987-02, Vol.23 (5), p.223-225

1987

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Ultra-high-speed ring oscillators based on self-aligned-gate modulation-doped n+-(Al, Ga)As/GaAs FETs

Electronics letters, 1985-01, Vol.21 (17), p.772-773

1985

Volltextzugriff (PDF)

Inverted GaAs/AlGaAs modulation-doped field-effect transistors with extremely high transconductances

IEEE electron device letters, 1986-02, Vol.7 (2), p.71-74

1986

Volltextzugriff (PDF)

Novel multilayer modulation doped (Al, Ga)As/GaAs structures for self-aligned gate FETs

Electronics letters, 1984-10, Vol.20 (21), p.854-855

1984

Volltextzugriff (PDF)

Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits

IEEE transactions on computer-aided design of integrated circuits and systems, 1986-04, Vol.5 (2), p.284-292

1986

Volltextzugriff (PDF)

High-performance self-aligned gate AlGaAs/GaAs MODFET voltage comparator

IEEE electron device letters, 1987-09, Vol.8 (9), p.431-433

1987

Volltextzugriff (PDF)

Two-Colour Pyrometry Measurements of Soot Loading in a Diesel Engine Burning Model Fuels of Varying Quality

Combustion science and technology, 1995-12, Vol.110-111 (1), p.321-339

1995

Volltextzugriff (PDF)

IIA-7 8.5-Picosecond ring oscillator gate delay with self-aligned gate modulation-doped n+-(Al,Ga)As/GaAs FET's

IEEE transactions on electron devices, 1985-11, Vol.32 (11), p.2530-2530

1985

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VA-1 Submicrometer self-aligned gate GaAs E/D MESFET's with VLSI compatible threshold voltage uniformity

IEEE transactions on electron devices, 1987-11, Vol.34 (11), p.2375-2375

1987

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IIA-4 A self-aligned gate process for IC's based on modulation-doped (Al, Ga)As/GaAs FET's

IEEE transactions on electron devices, 1984-12, Vol.31 (12), p.1963-1963

1984

Volltextzugriff (PDF)

IVA-5 ion implanted GaAs p-channel MESFET with Schottky-barrier height enhancement

IEEE transactions on electron devices, 1986-11, Vol.33 (11), p.1851-1851

1986

Volltextzugriff (PDF)

IIA-5 light and thermal sensitivity studies on three novel AlGaAs/GaAs 2 DEG structures: HIGFET, pulsed-doped MODFET, and superlattice MODFET

IEEE transactions on electron devices, 1986-11, Vol.33 (11), p.1839-1839

1986

Volltextzugriff (PDF)

Modulation‐doped FET threshold voltage uniformity of a high throughput 3 inch MBE system

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1984-04, Vol.2 (2), p.252-255

1984

Volltextzugriff (PDF)

Static random-access memory based on self-aligned-gate (Al,Ga)As/n+-GaAs superlattice modulation-doped FETs

Electronics letters, 1987, Vol.23 (2), p.87

1987

Volltextzugriff (PDF)

Refractory metal silicides for self‐aligned gate modulation doped n +‐(Al,Ga)As/GaAs field‐effect transistor integrated circuits

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1985-11, Vol.3 (6), p.1680-1684

1985

Volltextzugriff (PDF)

A self-aligned gate superlattice (Al, GA)As/n(+)-GaAs MODFET 5 x 5-bit parallel multiplier

IEEE electron device letters, 1986-12, Vol.7 (12), p.700-702

1986

Volltextzugriff (PDF)

Quantum well p-channel AlGaAs/InGaAs/GaAs devices for complementary heterostructure FET applications

IEEE transactions on electron devices, 1988-12, Vol.35 (12), p.2440

1988

Volltextzugriff (PDF)

A self-aligned gate superlattice (Al,GA)As/n+-GaAs MODFET 5 × 5-bit parallel multiplier

IEEE electron device letters, 1986-12, Vol.7 (12), p.700-702

1986

Volltextzugriff (PDF)

IIA-6 modulation-doped field-effect transistors utilizing superlattice AlGaAs/n+-GaAs charge-control layers

IEEE transactions on electron devices, 1986-11, Vol.33 (11), p.1839-1840

1986

Volltextzugriff (PDF)

A Self-Aligned Gate Modolation-Doped (Al,Ga)As/GaAs FET IC Process

1984 IEEE GaAs IC Symposium Technical Digest, 1984, p.167-170

1984

Volltextzugriff (PDF)

Kinetic equation study of phonon-induced nonequilibrium states in superconducting films

Physical review. B, Condensed matter, 1982-05, Vol.25 (9), p.5698-5706

1982

Volltextzugriff (PDF)

Sulfiredoxin as a Potential Therapeutic Target for Advanced and Metastatic Prostate Cancer

Oxidative medicine and cellular longevity, 2020, Vol.2020, p.2148562-12

2020

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Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface

FET Characterization using gated-TLM structure

Self-aligned modulation-doped (Al,Ga)As/GaAs field-effect transistors

Ion-implanted P-channel GaAs MESFET using schottky barrier height tailoring

Ultra-high-speed ring oscillators based on self-aligned-gate modulation-doped n+-(Al, Ga)As/GaAs FETs

Inverted GaAs/AlGaAs modulation-doped field-effect transistors with extremely high transconductances

Novel multilayer modulation doped (Al, Ga)As/GaAs structures for self-aligned gate FETs

Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits

High-performance self-aligned gate AlGaAs/GaAs MODFET voltage comparator

Two-Colour Pyrometry Measurements of Soot Loading in a Diesel Engine Burning Model Fuels of Varying Quality

IIA-7 8.5-Picosecond ring oscillator gate delay with self-aligned gate modulation-doped n+-(Al,Ga)As/GaAs FET's

VA-1 Submicrometer self-aligned gate GaAs E/D MESFET's with VLSI compatible threshold voltage uniformity

IIA-4 A self-aligned gate process for IC's based on modulation-doped (Al, Ga)As/GaAs FET's

IVA-5 ion implanted GaAs p-channel MESFET with Schottky-barrier height enhancement

IIA-5 light and thermal sensitivity studies on three novel AlGaAs/GaAs 2 DEG structures: HIGFET, pulsed-doped MODFET, and superlattice MODFET

Modulation‐doped FET threshold voltage uniformity of a high throughput 3 inch MBE system

Static random-access memory based on self-aligned-gate (Al,Ga)As/n+-GaAs superlattice modulation-doped FETs

Refractory metal silicides for self‐aligned gate modulation doped n +‐(Al,Ga)As/GaAs field‐effect transistor integrated circuits

A self-aligned gate superlattice (Al, GA)As/n(+)-GaAs MODFET 5 x 5-bit parallel multiplier

Quantum well p-channel AlGaAs/InGaAs/GaAs devices for complementary heterostructure FET applications

A self-aligned gate superlattice (Al,GA)As/n+-GaAs MODFET 5 × 5-bit parallel multiplier

IIA-6 modulation-doped field-effect transistors utilizing superlattice AlGaAs/n+-GaAs charge-control layers

A Self-Aligned Gate Modolation-Doped (Al,Ga)As/GaAs FET IC Process

Kinetic equation study of phonon-induced nonequilibrium states in superconducting films

Sulfiredoxin as a Potential Therapeutic Target for Advanced and Metastatic Prostate Cancer

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