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Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

Applied physics letters, 2015-12, Vol.107 (25), p.251106

2015

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Fast Strain Mapping of Nanowire Light-Emitting Diodes Using Nanofocused X‑ray Beams

ACS nano, 2015-07, Vol.9 (7), p.6978-6984

2015

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Electrical analysis and interface states evaluation of Ni Schottky diodes on 4H-SiC thick epilayers

Physica status solidi. A, Applications and materials science, 2005-10, Vol.202 (13), p.2508-2514

2005

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Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates

Physica Status Solidi (B) Basic Research, 2020-04, Vol.257 (4), p.n/a

2020

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Measurement of strain in InGaN/GaN nanowires and nanopyramids

Journal of applied crystallography, 2015-04, Vol.48 (2), p.344-349

2015

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Local defect-enhanced anodic oxidation of reformed GaN nanowires

Physical review materials, 2020-07, Vol.4 (7), Article 074603

2020

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Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AIN

Crystal growth & design, 2009-02, Vol.9 (2), p.880

2009

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Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures

Journal of crystal growth, 2009-05, Vol.311 (10), p.3007-3010

2009

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Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays

Physical review materials, 2019-09, Vol.3 (9), Article 093604

2019

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Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes

Semiconductor science and technology, 2007-12, Vol.22 (12), p.1287-1291

2007

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Electrical behavior of 4H-SiC metal-oxide-semiconductor structures with Al 2 O 3 as gate dielectric

Journal of applied physics, 2005, Vol.97 (12), p.124507

2005

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Fast epitaxy by PVT of SiC in hydrogen atmosphere

Journal of crystal growth, 2005-02, Vol.275 (1), p.e1103-e1107

2005

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Structural instabilities in growth of SiC crystals

Journal of crystal growth, 2005-02, Vol.275 (1), p.e461-e466

2005

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Evaluation of MOS structures processed on 4H–SiC layers grown by PVT epitaxy

Solid-state electronics, 2005-12, Vol.49 (12), p.1917-1920

2005

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Comparison of SiC sublimation epitaxial growth in graphite and TaC coated crucibles

Diamond and related materials, 2003-10, Vol.12 (10), p.1936-1939

2003

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Effect of boron on the resistivity of compensated 4H-SiC

Journal of electronic materials, 2003-05, Vol.32 (5), p.452-457

2003

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Growth of Device Quality 4H-SiC High Velocity Epitaxy

Materials science forum, 2004-01, Vol.457-460, p.201-204

2004

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Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications

Crystal research and technology (1979), 2005-11, Vol.40 (10-11), p.964-966

2005

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Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation

Materials science forum, 2003, Vol.433-436, p.75-78

2003

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Deep levels in 4H-SiC layers grown by sublimation epitaxy

Optical materials, 2003, Vol.23 (1), p.61-64

2003

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Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence

Fast Strain Mapping of Nanowire Light-Emitting Diodes Using Nanofocused X‑ray Beams

Electrical analysis and interface states evaluation of Ni Schottky diodes on 4H-SiC thick epilayers

Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device‐Quality GaN Templates

Measurement of strain in InGaN/GaN nanowires and nanopyramids

Local defect-enhanced anodic oxidation of reformed GaN nanowires

Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AIN

Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures

Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays

Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes

Electrical behavior of 4H-SiC metal-oxide-semiconductor structures with Al 2 O 3 as gate dielectric

Fast epitaxy by PVT of SiC in hydrogen atmosphere

Structural instabilities in growth of SiC crystals

Evaluation of MOS structures processed on 4H–SiC layers grown by PVT epitaxy

Comparison of SiC sublimation epitaxial growth in graphite and TaC coated crucibles

Effect of boron on the resistivity of compensated 4H-SiC

Growth of Device Quality 4H-SiC High Velocity Epitaxy

Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications

Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation

Deep levels in 4H-SiC layers grown by sublimation epitaxy

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