UB Paderborn / Katalog / Suche / in CDI

Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.1856-1861

2014

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Characterization of the carriers' multiplication in Si and SiC power devices by soft-gamma irradiation under cryostatic conditions

Microelectronics and reliability, 2022-11, Vol.138, p.114741, Article 114741

2022

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Selected failure mechanisms of modern power modules

Microelectronics and reliability, 2002, Vol.42 (4), p.653-667

Ciappa, Mauro

2002

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A unified model for TCAD simulation of the charge generated in semiconductors by low-energy alpha particles and protons

Microelectronics and reliability, 2022-11, Vol.138, p.114725, Article 114725

2022

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Extraction of Accurate Thermal Compact Models for Fast Electro-Thermal Simulation of IGBT Modules in Hybrid Electric Vehicles

Microelectronics and reliability, 2005-09, Vol.45 (9), p.1694-1699

2005

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Measurement of the transient junction temperature in MOSFET devices under operating conditions

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1707-1712

2007

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New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1772-1777

2006

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A Novel Thermomechanics -Based Lifetime Prediction Model for Cycle Fatigue Failure Mechanisms in Power Semiconductors

Microelectronics and reliability, 2002-09, Vol.42 (9), p.1653-1658

2002

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High resolution two-dimensional dose mapping of electron beam processed polymers

Radiation physics and chemistry (Oxford, England : 1993), 2012-08, Vol.81 (8), p.1270-1275

2012

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A poly-L-lactic acid/ collagen/glycosaminoglycan matrix for tissue engineering applications

Journal of cellular plastics, 2017-09, Vol.53 (5), p.537-549

2017

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Novel simulation approach for transient analysis and reliable thermal management of power devices

Microelectronics and reliability, 2008-08, Vol.48 (8), p.1500-1504

2008

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Design of optimum electron beam irradiation processes for the reliability of electric cables used in critical applications

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1479-1483

2011

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Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2290-2299

2005

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IEEE_Xplore

Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast

Microelectronics and reliability, 2005-09, Vol.45 (9), p.1499-1504

2005

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Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1754-1759

2006

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Two-dimensional dopant imaging of silicon carbide devices by secondary electron potential contrast

Microelectronic engineering, 2007-03, Vol.84 (3), p.413-418

2007

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A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1713-1718

2007

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Robustness test and failure analysis of IGBT modules during turn-off

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1725-1729

2007

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In situ screening techniques for defective oxides in devices for automotive applications

2011 International Reliability Physics Symposium, 2011, p.2B.1.1-2B.1.8

2011

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IEEE_Xplore

Characterization of photonic devices by secondary electron potential contrast

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1536-1541

2006

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Virtual reliability assessment of integrated power switches based on multi-domain simulation approach

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1343-1348

2007

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Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.314-322

2006

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IEEE_Xplore

Extraction of roughness parameters at nanometer scale by Monte Carlo simulation of Critical Dimension Scanning Electron Microscopy

Solid-state electronics, 2015-11, Vol.113, p.73-78

2015

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Lifetime prediction on the base of mission profiles

Microelectronics and reliability, 2005-09, Vol.45 (9), p.1293-1298

Ciappa, Mauro

2005

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On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices

Microelectronics and reliability, 2003-09, Vol.43 (9), p.1771-1776

2003

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Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules

Characterization of the carriers' multiplication in Si and SiC power devices by soft-gamma irradiation under cryostatic conditions

Selected failure mechanisms of modern power modules

A unified model for TCAD simulation of the charge generated in semiconductors by low-energy alpha particles and protons

Extraction of Accurate Thermal Compact Models for Fast Electro-Thermal Simulation of IGBT Modules in Hybrid Electric Vehicles

Measurement of the transient junction temperature in MOSFET devices under operating conditions

New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions

A Novel Thermomechanics -Based Lifetime Prediction Model for Cycle Fatigue Failure Mechanisms in Power Semiconductors

High resolution two-dimensional dose mapping of electron beam processed polymers

A poly-L-lactic acid/ collagen/glycosaminoglycan matrix for tissue engineering applications

Novel simulation approach for transient analysis and reliable thermal management of power devices

Design of optimum electron beam irradiation processes for the reliability of electric cables used in critical applications

Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast

Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications

Two-dimensional dopant imaging of silicon carbide devices by secondary electron potential contrast

A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs

Robustness test and failure analysis of IGBT modules during turn-off

In situ screening techniques for defective oxides in devices for automotive applications

Characterization of photonic devices by secondary electron potential contrast

Virtual reliability assessment of integrated power switches based on multi-domain simulation approach

Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio

Extraction of roughness parameters at nanometer scale by Monte Carlo simulation of Critical Dimension Scanning Electron Microscopy

Lifetime prediction on the base of mission profiles

On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices

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