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Evidence of charged interface states limited scattering in GaN heterostructures

Journal of applied physics, 2023-08, Vol.134 (8)

2023

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Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum

Scientific reports, 2017-07, Vol.7 (1), p.5256-15, Article 5256

2017

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The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates

Journal of applied physics, 2024-01, Vol.135 (4)

2024

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High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity

Scientific reports, 2018-05, Vol.8 (1), p.8300-11, Article 8300

2018

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High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer

IEEE electron device letters, 2011-11, Vol.32 (11), p.1519-1521

2011

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Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum

Analytical chemistry (Washington), 2019-05, Vol.91 (9), p.5953-5960

2019

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Dynamic monitoring of transmembrane potential changes: a study of ion channels using an electrical double layer-gated FET biosensor

Lab on a chip, 2018-01, Vol.18 (7), p.1047-1056

2018

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Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities

Physical review letters, 2006-03, Vol.96 (11), p.117401-117401, Article 117401

2006

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Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure

Applied physics letters, 2019-08, Vol.115 (9)

2019

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Direct detection of fibrinogen in human plasma using electric-double-layer gated AlGaN/GaN high electron mobility transistors

Applied physics letters, 2017-08, Vol.111 (8)

2017

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Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

Materials, 2021-09, Vol.14 (19), p.5474

2021

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Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

Materials, 2021-12, Vol.15 (1), p.42

2021

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The Influence of Superlattice Structure on the Dynamic Buffer Response of AlInN/GaN-on-Si HEMTs

IEEE transactions on nanotechnology, 2020, Vol.19, p.415-420

2020

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Trap-Profile Extraction Using High-Voltage Capacitance-Voltage Measurement in AlGaN/GaN Heterostructure Field-Effect Transistors With Field Plates

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.835-839

2015

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Improving the characteristics of intermediate-band solar cell devices using a vertically aligned InAs/GaAsSb quantum dot structure

Solar energy materials and solar cells, 2012-10, Vol.105, p.237-241

2012

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Light Output Enhancement of InGaN Light-Emitting Diodes Grown on Masklessly Etched Sapphire Substrates

IEEE photonics technology letters, 2008-10, Vol.20 (19), p.1621-1623

2008

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Analysis of the Back-Gate Effect in Normally OFF p-GaN Gate High-Electron Mobility Transistor

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.507-511

2015

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AlInGaN/GaN HEMTs With High Johnson's Figure-of-Merit on Low Resistivity Silicon Substrate

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.130-136

2021

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Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

Applied physics letters, 2010-03, Vol.96 (12)

2010

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High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensors

Biosensors & bioelectronics, 2018-02, Vol.100, p.282-289

2018

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Extremely High Saturation Current-Bandwidth Product Performance of a Near-Ballistic Uni-Traveling-Carrier Photodiode With a Flip-Chip Bonding Structure

IEEE journal of quantum electronics, 2010-01, Vol.46 (1), p.80-86

2010

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A Study on the Fiber Dispersion Effect for the Generation of Quasi-Sinusoidal Terahertz Modulations on Optical Pulses

Journal of lightwave technology, 2015-12, Vol.33 (23), p.4899-4907

2015

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Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs

IEEE journal of the Electron Devices Society, 2020-01, Vol.8, p.1-1

2020

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Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge

Physica Status Solidi. B: Basic Solid State Physics, 2017-02, Vol.254 (2), p.np-n/a

2017

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Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Advanced materials (Weinheim), 2015-09, Vol.27 (33), p.4845-4850

2015

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Evidence of charged interface states limited scattering in GaN heterostructures

Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum

The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates

High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity

High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer

Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum

Dynamic monitoring of transmembrane potential changes: a study of ion channels using an electrical double layer-gated FET biosensor

Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities

Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure

Direct detection of fibrinogen in human plasma using electric-double-layer gated AlGaN/GaN high electron mobility transistors

Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

The Influence of Superlattice Structure on the Dynamic Buffer Response of AlInN/GaN-on-Si HEMTs

Trap-Profile Extraction Using High-Voltage Capacitance-Voltage Measurement in AlGaN/GaN Heterostructure Field-Effect Transistors With Field Plates

Improving the characteristics of intermediate-band solar cell devices using a vertically aligned InAs/GaAsSb quantum dot structure

Light Output Enhancement of InGaN Light-Emitting Diodes Grown on Masklessly Etched Sapphire Substrates

Analysis of the Back-Gate Effect in Normally OFF p-GaN Gate High-Electron Mobility Transistor

AlInGaN/GaN HEMTs With High Johnson's Figure-of-Merit on Low Resistivity Silicon Substrate

Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensors

Extremely High Saturation Current-Bandwidth Product Performance of a Near-Ballistic Uni-Traveling-Carrier Photodiode With a Flip-Chip Bonding Structure

A Study on the Fiber Dispersion Effect for the Generation of Quasi-Sinusoidal Terahertz Modulations on Optical Pulses

Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs

Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge

Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

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