UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities

Physical review letters, 2006-03, Vol.96 (11), p.117401-117401, Article 117401

2006

Volltextzugriff (PDF)

Interfacial characteristics of Y^sub 2^O^sub 3^/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition

Journal of crystal growth, 2017-11, Vol.477, p.164

2017

Volltextzugriff (PDF)

AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

Applied physics letters, 2002-08, Vol.81 (9), p.1729-1731

2002

Volltextzugriff (PDF)

Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

Applied physics letters, 2000-11, Vol.77 (19), p.2988-2990

2000

Volltextzugriff (PDF)

MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors

Applied physics letters, 2004-04, Vol.84 (15), p.2919-2921

2004

Volltextzugriff (PDF)

Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

Journal of applied physics, 2013-11, Vol.114 (20)

2013

Volltextzugriff (PDF)

Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

Applied physics letters, 2003-12, Vol.83 (23), p.4845-4847

2003

Volltextzugriff (PDF)

Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures

Journal of applied physics, 2002-10, Vol.92 (8), p.4441-4448

2002

Volltextzugriff (PDF)

Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

IEEE transactions on electron devices, 2002-01, Vol.49 (1), p.32-36

2002

Volltextzugriff (PDF)

Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells

Applied physics letters, 2001-01, Vol.78 (3), p.314-316

2001

Volltextzugriff (PDF)

Optical properties of InAs quantum dots with InAlAs∕InGaAs composite matrix

Journal of applied physics, 2005-01, Vol.97 (2)

2005

Volltextzugriff (PDF)

AlGaN/GaN HEMT based liquid sensors

Solid-state electronics, 2004-02, Vol.48 (2), p.351-353

2004

Volltextzugriff (PDF)

Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions

Applied physics letters, 2004-04, Vol.84 (14), p.2506-2508

2004

Volltextzugriff (PDF)

Vertical and lateral GaN rectifiers on free-standing GaN substrates

Applied physics letters, 2001-09, Vol.79 (10), p.1555-1557

2001

Volltextzugriff (PDF)

Directional Coupler Formed by Photonic Crystal InAlGaAs Nanorods

Journal of lightwave technology, 2008-03, Vol.26 (5), p.488-491

2008

Volltextzugriff (PDF)

Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing

Applied physics letters, 2000-02, Vol.76 (6), p.691-693

2000

Volltextzugriff (PDF)

Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures

Applied physics letters, 2000-03, Vol.76 (12), p.1567-1569

2000

Volltextzugriff (PDF)

Hole emission processes in InAs/GaAs self-assembled quantum dots

Physical review. B, Condensed matter, 2002-11, Vol.66 (19), Article 195337

2002

Volltextzugriff (PDF)

GaN electronics for high power, high temperature applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.227-231

2001

Volltextzugriff (PDF)

On the origin of spin loss in GaMnN/InGaN light-emitting diodes

Applied physics letters, 2004-04, Vol.84 (14), p.2599-2601

2004

Volltextzugriff (PDF)

Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy

Journal of applied physics, 2002-01, Vol.91 (1), p.531-533

2002

Volltextzugriff (PDF)

Generation of frequency-tunable nanoacoustic waves by optical coherent control

Applied physics letters, 2005-08, Vol.87 (9)

2005

Volltextzugriff (PDF)

Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2005-11, Vol.409 (1), p.340-347

2005

Volltextzugriff (PDF)

Mechanism of luminescence in InGaN/GaN multiple quantum wells

Applied physics letters, 2000-06, Vol.76 (25), p.3712-3714

2000

Volltextzugriff (PDF)

High voltage GaN Schottky rectifiers

IEEE transactions on electron devices, 2000-04, Vol.47 (4), p.692-696

2000

Volltextzugriff (PDF)

1 – 25 von 339

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(244)
Mit Volltextzugriff
(260)

Publikationsform

Sprache

Englisch
(337)
Chinesisch
(2)

Erscheinungsjahr

n.n

Thema

Science & Technology
(315)
Physical Sciences
(235)
Physics
(230)
Technology
(181)
Physics, Applied
(149)
Materials Science
(114)
Materials Science, Multidisciplinary
(105)
Physics, Condensed Matter
(103)
Engineering
(78)
Engineering, Electrical & Electronic
(72)
Materials Science, Characterization & Testing
(61)
Exact Sciences And Technology
(51)
Humans
(49)
Life Sciences & Biomedicine
(46)
Female
(36)
Male
(34)
Middle Aged
(32)
Optics
(28)
Electronics
(23)
Adult
(22)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities

Interfacial characteristics of Y^sub 2^O^sub 3^/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition

AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors

Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures

Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells

Optical properties of InAs quantum dots with InAlAs∕InGaAs composite matrix

AlGaN/GaN HEMT based liquid sensors

Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions

Vertical and lateral GaN rectifiers on free-standing GaN substrates

Directional Coupler Formed by Photonic Crystal InAlGaAs Nanorods

Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing

Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures

Hole emission processes in InAs/GaAs self-assembled quantum dots

GaN electronics for high power, high temperature applications

On the origin of spin loss in GaMnN/InGaN light-emitting diodes

Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy

Generation of frequency-tunable nanoacoustic waves by optical coherent control

Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors

Mechanism of luminescence in InGaN/GaN multiple quantum wells

High voltage GaN Schottky rectifiers

Suchergebnisse filtern